AN2016-18 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT About this document Scope and purpose This Application Note provides an explanation of the new 600 V TRENCHSTOP™ Performance technology, abbr. 60 TP, and to provide a comparison to the 600 V TRENCHSTOP™ technology, abbr. 60 T. The main differences of products in those two technologies are given. We demonstrate how the design-in of the new 600 V TRENCHSTOP™ Performance IGBTs can be easily achieved. Existing applications which currently use 60 T IGBTs do not need a re-design to make use of TRENCHSTOP™ Performance IGBTs. Attention: The information given in this document is only to be regarded as a hint for the utilization of the IGBT device and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. Intended audience This application note addresses engineers designing-in the products in their applications. It is intended to be a guide to reduce the design-in effort into existing applications using TRENCHSTOP™ IGBTs. Table of contents About this document ............................................................................................................................................. 1 Table of contents ................................................................................................................................................... 1 1 1.1 1.2 Introduction ....................................................................................................................................... 2 Product portfolio ..................................................................................................................................... 2 Type designation ..................................................................................................................................... 3 2 2.1 2.2 2.3 2.4 2.5 2.6 TRENCHSTOP™ Performance characteristics ..................................................................................... 4 Application measurement test ............................................................................................................... 4 Electromagnetic interference (EMI) test................................................................................................. 6 Static characteristics ............................................................................................................................... 8 Dynamic characteristics .......................................................................................................................... 9 Gate charge............................................................................................................................................ 13 Summary ............................................................................................................................................... 13 3 Symbols and terms .......................................................................................................................... 14 4 References ....................................................................................................................................... 15 Revision history ................................................................................................................................................... 16 Application Note Please read the Important Notice and Warnings at the end of this document www.infineon.com/trenchstop-performance V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT Introduction 1 Introduction The 600 V TRENCHSTOPTM IGBTs are well established products on the power electronics market within a big field of hard switching applications such as industrial and consumer drives, uninterruptible power supplies, air conditioning, major home appliances, solar inverters, and automotive drives. With the new 600 V TRENCHSTOPTM Performance technology, Infineon combines the latest IGBT and diode technologies to provide a competitive solution especially for industrial and consumer drives and major home appliance applications. The target for this technology is to improve system efficiency over the existing 60 T products, without needing to invest time and effort re-designing in the driver circuit and EMI filters. The 60 TP technology is realized as Non-Punch-Through-IGBT with a state-of-the-art fieldstop and a trench gate concept. This enables low collector-emitter saturation voltage VCE(sat) and low switching losses at compact dimensions. The 60 TP IGBTs are offered with and without copacked Rapid 1 diodes. Infineon's Rapid 1 diode family, with temperature-stable forward voltage VF, ensures the lowest conduction losses and soft recovery. 1.1 Product portfolio The initial product portfolio consists of six products in the TO-247 package. The IGBT is available as single IGBT, but also as DuoPack copacked with a half rated Rapid 1 diode. A further portfolio extension is possible. TRENCHSTOPTM Performance 600V TO-247 Figure 1 Application Note IGWiiN60TP Single IGBT IKWiiN60DTP Copack RAPID1 Diode 30 A 40 A 50 A 30 A 40 A 50 A Portfolio overview 2 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT Introduction 1.2 Type designation IGBTs are marked with a part number label identifying the main information related to the part. Products of the new 600 V TRENCHSTOPTM Performance technology can be identified via the last two digits of the part number: Figure 2 Application Note Designation of IGBT part number 3 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT TRENCHSTOP™ Performance characteristics 2 TRENCHSTOP™ Performance characteristics This section is dedicated to the 60 TP IGBTs electrical performance compared to the existing 60 T IGBTs. Note: Details about electrical parameters can be found in the related application note [1] The data reflects the typical device behavior. It does not represent the maximum or minimum characteristics, which are possible. For details about minimum and maximum parameter values please refer to the data sheet for the particular device of interest. To provide an example, the products IKW50N60T (TRENCHSTOPTM technology) and the IKW50N60DTP (TRENCHSTOPTM Performance technology) are compared. 2.1 Application measurement test To assess the performance of the IKW50N60DTP under application conditions, an application test in an internal motor test bench was performed. The IGBTs were mounted in a two level 3-phase B6 inverter. Figure 3 Simplified B6 inverter schematic for application test Figure 4 B6 inverter Test conditions VBUS = 400 V fSW = 15 kHz Application Note 4 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT TRENCHSTOP™ Performance characteristics POUT = 2.2 and 5 kW 3-phase motor with generator as break Dead time = 1 µs Modulation index = 99% IGBTs fixed on common heat sink Efficiency in Motor Test 98 97.8 97.6 Efficiency [%] 97.4 97.2 97 96.8 IKW50N60T 96.6 IKW50N60DTP 96.4 96.2 96 2 2.5 3 3.5 4 4.5 5 5.5 PO [kW] Figure 5 Inverter efficiency comparison Result The TRENCHSTOPTM Performance IGBT shows a 0.6 % improved efficiency compared to the IKW50N60T in this application test thanks to the lower switching losses. The test results shows that even without changing any hardware of the system, the TRENCHSTOPTM Performance IGBT can replace former products and improve efficiency at the same time. Application Note 5 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT TRENCHSTOP™ Performance characteristics 2.2 Electromagnetic interference (EMI) test Due to the slightly different switching behavior an EMI test has been performed to verify if a different EMI protection network is required or not. The test has been performed with the inverter shown in Figure 4 and a motor load. Conducted and radiated emissions have been measured. Test conditions VBUS = 400 V RGon = 16 Ω RGoff = 15 Ω Load: 3-phase motor (750 W) Isup ≈ 1.6 A (phase frequency = 25 Hz) fsw = 15 kHz Dead time = 1µs Modulation index = 99% Conducted emissions measured according to EN55011 A CE voltage with 2-line-LISN ESH3-Z5, with 80 cm distance between device under test and the measurement device. Radiated emission measurement according to EN55011 A radiated emissions between 30 MHz-1 GHz. 3 m distance between device under test and antenna. Only the device under test was in the chamber. The motor was outside of the chamber. VCE 2-Line-LISN Conducted Emissions Difference between TRENCHSTOPTM 60T and 60TP 6 Quasipeak Difference Average Difference 5 4 3 Level [dBµV] 2 1 0 -1 -2 -3 -4 -5 150 1500 15000 Frequency [kHz] Figure 6 Application Note Conducted emission measurements; Differences between IKW50N60T and IKW50N60DTP 6 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT TRENCHSTOP™ Performance characteristics Radiated HF-Field 30MHz - 1 GHz Difference between TRENCHSTOPTM 60T and 60TP 10.00 horizontal vertical Level [dBµV/m] 5.00 0.00 -5.00 -10.00 -15.00 30 300 Frequency [MHz] Figure 7 Radiated emission measurements; Differences between IKW50N60T and IKW50N60DTP Results The measurements showed that no new emission frequency spots occurred for IKW50N60DTP. Only small differences in the absolute values are observed. Therefore, existing EMI circuits used in applications using the TRENCHSTOPTM IGBTs may be used for the TRENCHSTOPTM Performance IGBTs without modifications (although the final decision would depend on the specific application requirements). Application Note 7 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT TRENCHSTOP™ Performance characteristics 2.3 Static characteristics The 600 V TRENCHSTOPTM Performance technology has slightly higher static losses than the original 60T products. The following figure shows the collector-emitter saturation voltage VCE(sat) as a function of the junction temperature Tj. The temperature gradient of the IKW50N60DTP is positive allowing a paralleling of device. VCE(sat)=f(Tj) 2 1.75 VCE(sat) [V] 1.5 1.25 1 IKW50N60DTP @ IC=50A IKW50N60T @ IC=50A 0.75 IKW50N60DTP @ IC=25A IKW50N60T @ IC=25A 0.5 25 45 65 85 105 125 145 165 Tj [°C] Figure 8 VCE(sat) as a function of the Tj for two currents Figure 4 highlights the static diode losses versus junction temperature. The IKW50N60T uses a full rated emitter controlled diode, with 20 mV lower forward voltage VF than Rapid 1 diode used in the IKW50N60DTP at Tj = 25°C. Note: The temperature characteristic shown in Figure 9 is a simplification. For more details please refer to the appropriate datasheets. Application Note 8 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT TRENCHSTOP™ Performance characteristics VF=f(Tj) 1.4 1.35 1.3 VF [V] 1.25 1.2 1.15 1.1 IKW50N60DTP @ IC=25A 1.05 IKW50N60T @ IC=25A 1 25 45 65 85 105 125 145 165 Tj [°C] Figure 9 2.4 VF as a function of the Tj Dynamic characteristics The IKW50N60DTP has lower total switching losses compared to the IKW50N60T thanks to lower diode reverse recovery losses and a strongly reduced current tail. The higher the switching frequency in the application is, the bigger the efficiency improvement of the TRENCHSTOPTM Performance technology is. Figure 9 to Figure 14 show the switching behavior of both technologies in a double-pulse test setup for the following conditions: Hard switching condition Tj = 100 °C IC = 25 A RG = 14.6 Ω The high and low side IGBTs are always of the same product type Application Note 9 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT TRENCHSTOP™ Performance characteristics IC = 33 A at VCE = 8 V Figure 10 Turn on of IKW50N60T IC = 26 A at VCE = 8 V Figure 11 Turn on of IKW50N60DTP IKW50N60DTP has a significant lower reverse recovery charge Qrr due to the use of the latest Rapid diode technology. Note: The turn on energy is calculated as shown in Figure 12 between the points VGE = 10 % VGEon and VCE = 2 % VCEoff. The collector current at the voltage VCE = 8 V (2 % VCEoff) is IC = 26 A for the IKW50N60DTP, but IC = 33 A for the IKW50N60T. Therefore the total IKW50N60T’s turn on losses are slightly higher than the measured ones in this document, if the losses after VCE = 2 % VCEoff until IC reaches IC = 26 A are considered too. For the example shown in Figure 10 the turn on losses increase by ≈1.3 %, if the energy is calculated until the collector current IC reaches the value IC = 26 A. Application Note 10 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT TRENCHSTOP™ Performance characteristics Figure 12 Definition of switching losses according datasheet Figure 13 Turn off of IKW50N60T Application Note 11 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT TRENCHSTOP™ Performance characteristics Figure 14 Turn off of IKW50N60DTP The IKW50N60DTP has a significantly reduced current tail, which leads to a 30% lower turn off energy at the same voltage overshoot compared to IKW50N60T. Figure 15 gives the switching losses’ comparisons for IC = 25 A. Typical gate charge Tj = 25 °C 15 12.5 VGE [V] 10 7.5 5 IKW50N60DTP 2.5 IKW50N60T 0 0 50 100 150 200 250 300 QG [nC] Figure 15 Switching energies as a function of Tj for IC = 25 A The turn-on energies are comparable for both products, but the turn-off energy of the IKW50N60DTP is, thanks to the low current tail, significantly lower. As a result the total switching losses are significantly lower. The total Application Note 12 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT TRENCHSTOP™ Performance characteristics switching losses of the IKW50N60DTP at Tj = 100 °C are about 19 % lower compared to the IKW50N60T. This allows improved application efficiencies as shown in chapter 2.1. 2.5 Gate charge The IGBT’s gate charge determines the gate driver output power capabilities. The TRENCHSTOPTM Performance technology offers a 20 % reduced gate charge at VGE = 15 V compared to the existing TRENCHSTOPTM IGBTs. Figure 16 provides the typical gate charge QG comparison for IC = 50 A. Typical gate charge Tj = 25 °C 15 12.5 VGE [V] 10 7.5 5 IKW50N60DTP 2.5 IKW50N60T 0 0 50 100 150 200 250 300 QG [nC] Figure 16 2.6 Gate charge for VCC = 480 V, IC = 50 A and Tj = 25 °C Summary In this application note, the comparison of the static and dynamic characteristics of the new TRENCHSTOPTM Performance IGBTs gave a view of the improved performance in comparison to the existing TRENCHSTOPTM IGBTs. The proof has been done by an application test on a motor test bench. At 15 kHz, an improved efficiency of 0.6 % has been observed. The EMI investigation has shown a marginal change in radiated and conducted emission of the 60 TP, with no new frequency spots being observed. As a result, the TRENCHSTOPTM Performance family can replace the 60 T family in most applications with no or very little redesign effort. Furthermore, it offers a perfect fit for applications requiring short circuit robustness at high efficiency and superior EMI performance. Application Note 13 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT Symbols and terms 3 Symbols and terms A Anode C Collector, capacitance diF/dt Rate of diode current raise dirr/dt Peak rate of diode current fall during recovery process E Emitter, energy Eoff Turn-off loss energy Eon Turn-on loss energy f Frequency G Gate I Current IC Collector current IF Diode forward current Qrr Reverse recovery charge QG Gate charge RG Gate resistance Rth(j-c), Rthjc Thermal resistance junction to case Tc Case temperature t Time Tj Junction temperature Tvj Operation junction temperature V Voltage Vbus Bus voltage VCEsat Collector-emitter saturation voltage VF Diode forward voltage VGE Gate-emitter voltage Application Note 14 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT References 4 [1] References Infineon Application note AN2015-13 V1.0 ‘Explanation of discrete IGBTs' datasheets’, September 2015 http://www.infineon.com/dgdl/Infineon-ApplicationNote_DiscreteIGBT_DatasheetExplanation-ANv01_00-EN.pdf?fileId=5546d462501ee6fd015023070b8b306d Application Note 15 V1.0 2016-04-26 600 V TRENCHSTOP™ Performance versus TRENCHSTOP™ Discrete IGBT Revision history Revision history Major changes since the last revision Page or Reference Description of change -- First release Application Note 16 V1.0 2016-04-26 Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2016-04-26 Published by Infineon Technologies AG 81726 Munich, Germany ©AN2016-18owners. 2016 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: [email protected] Document reference AN2016-18 IMPORTANT NOTICE The information contained in this application note is given as a hint for the implementation of the product only and shall in no event be regarded as a description or warranty of a certain functionality, condition or quality of the product. Before implementation of the product, the recipient of this application note must verify any function and other technical information given herein in the real application. Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind (including without limitation warranties of non-infringement of intellectual property rights of any third party) with respect to any and all information given in this application note. 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