Application Note 600V TRENCHSTOP™ Performance IGBT

AN2016-18
600 V TRENCHSTOP™ Performance versus
TRENCHSTOP™
Discrete IGBT
About this document
Scope and purpose
This Application Note provides an explanation of the new 600 V TRENCHSTOP™ Performance technology, abbr.
60 TP, and to provide a comparison to the 600 V TRENCHSTOP™ technology, abbr. 60 T. The main differences of
products in those two technologies are given.
We demonstrate how the design-in of the new 600 V TRENCHSTOP™ Performance IGBTs can be easily achieved.
Existing applications which currently use 60 T IGBTs do not need a re-design to make use of TRENCHSTOP™
Performance IGBTs.
Attention:
The information given in this document is only to be regarded as a hint for the utilization of the IGBT
device and shall not be regarded as a description or warranty of a certain functionality, condition or
quality of the device.
Intended audience
This application note addresses engineers designing-in the products in their applications. It is intended to be a
guide to reduce the design-in effort into existing applications using TRENCHSTOP™ IGBTs.
Table of contents
About this document ............................................................................................................................................. 1
Table of contents ................................................................................................................................................... 1
1
1.1
1.2
Introduction ....................................................................................................................................... 2
Product portfolio ..................................................................................................................................... 2
Type designation ..................................................................................................................................... 3
2
2.1
2.2
2.3
2.4
2.5
2.6
TRENCHSTOP™ Performance characteristics ..................................................................................... 4
Application measurement test ............................................................................................................... 4
Electromagnetic interference (EMI) test................................................................................................. 6
Static characteristics ............................................................................................................................... 8
Dynamic characteristics .......................................................................................................................... 9
Gate charge............................................................................................................................................ 13
Summary ............................................................................................................................................... 13
3
Symbols and terms .......................................................................................................................... 14
4
References ....................................................................................................................................... 15
Revision history ................................................................................................................................................... 16
Application Note
Please read the Important Notice and Warnings at the end of this document
www.infineon.com/trenchstop-performance
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
Introduction
1
Introduction
The 600 V TRENCHSTOPTM IGBTs are well established products on the power electronics market within a big
field of hard switching applications such as industrial and consumer drives, uninterruptible power supplies, air
conditioning, major home appliances, solar inverters, and automotive drives.
With the new 600 V TRENCHSTOPTM Performance technology, Infineon combines the latest IGBT and diode
technologies to provide a competitive solution especially for industrial and consumer drives and major home
appliance applications. The target for this technology is to improve system efficiency over the existing 60 T
products, without needing to invest time and effort re-designing in the driver circuit and EMI filters.
The 60 TP technology is realized as Non-Punch-Through-IGBT with a state-of-the-art fieldstop and a trench gate
concept. This enables low collector-emitter saturation voltage VCE(sat) and low switching losses at compact
dimensions.
The 60 TP IGBTs are offered with and without copacked Rapid 1 diodes. Infineon's Rapid 1 diode family, with
temperature-stable forward voltage VF, ensures the lowest conduction losses and soft recovery.
1.1
Product portfolio
The initial product portfolio consists of six products in the TO-247 package. The IGBT is available as single IGBT,
but also as DuoPack copacked with a half rated Rapid 1 diode.
A further portfolio extension is possible.
TRENCHSTOPTM Performance
600V
TO-247
Figure 1
Application Note
IGWiiN60TP
Single IGBT
IKWiiN60DTP
Copack RAPID1 Diode
30 A
40 A
50 A
30 A
40 A
50 A
Portfolio overview
2
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
Introduction
1.2
Type designation
IGBTs are marked with a part number label identifying the main information related to the part. Products of the
new 600 V TRENCHSTOPTM Performance technology can be identified via the last two digits of the part number:
Figure 2
Application Note
Designation of IGBT part number
3
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
TRENCHSTOP™ Performance characteristics
2
TRENCHSTOP™ Performance characteristics
This section is dedicated to the 60 TP IGBTs electrical performance compared to the existing 60 T IGBTs.
Note:
Details about electrical parameters can be found in the related application note [1]
The data reflects the typical device behavior. It does not represent the maximum or minimum characteristics,
which are possible. For details about minimum and maximum parameter values please refer to the data sheet
for the particular device of interest. To provide an example, the products IKW50N60T (TRENCHSTOPTM
technology) and the IKW50N60DTP (TRENCHSTOPTM Performance technology) are compared.
2.1
Application measurement test
To assess the performance of the IKW50N60DTP under application conditions, an application test in an internal
motor test bench was performed. The IGBTs were mounted in a two level 3-phase B6 inverter.
Figure 3
Simplified B6 inverter schematic for application test
Figure 4
B6 inverter
Test conditions
 VBUS = 400 V
 fSW = 15 kHz
Application Note
4
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
TRENCHSTOP™ Performance characteristics
 POUT = 2.2 and 5 kW
 3-phase motor with generator as break
 Dead time = 1 µs
 Modulation index = 99%
 IGBTs fixed on common heat sink
Efficiency in Motor Test
98
97.8
97.6
Efficiency [%]
97.4
97.2
97
96.8
IKW50N60T
96.6
IKW50N60DTP
96.4
96.2
96
2
2.5
3
3.5
4
4.5
5
5.5
PO [kW]
Figure 5
Inverter efficiency comparison
Result
The TRENCHSTOPTM Performance IGBT shows a 0.6 % improved efficiency compared to the IKW50N60T in this
application test thanks to the lower switching losses. The test results shows that even without changing any
hardware of the system, the TRENCHSTOPTM Performance IGBT can replace former products and improve
efficiency at the same time.
Application Note
5
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
TRENCHSTOP™ Performance characteristics
2.2
Electromagnetic interference (EMI) test
Due to the slightly different switching behavior an EMI test has been performed to verify if a different EMI
protection network is required or not. The test has been performed with the inverter shown in Figure 4 and a
motor load. Conducted and radiated emissions have been measured.
Test conditions
 VBUS = 400 V
 RGon = 16 Ω
 RGoff = 15 Ω
 Load: 3-phase motor (750 W)
 Isup ≈ 1.6 A (phase frequency = 25 Hz)
 fsw = 15 kHz
 Dead time = 1µs
 Modulation index = 99%
 Conducted emissions measured according to EN55011 A CE voltage with 2-line-LISN ESH3-Z5, with 80 cm
distance between device under test and the measurement device.
 Radiated emission measurement according to EN55011 A radiated emissions between 30 MHz-1 GHz. 3 m
distance between device under test and antenna. Only the device under test was in the chamber. The motor
was outside of the chamber.
VCE 2-Line-LISN Conducted Emissions
Difference between TRENCHSTOPTM 60T and 60TP
6
Quasipeak Difference
Average Difference
5
4
3
Level [dBµV]
2
1
0
-1
-2
-3
-4
-5
150
1500
15000
Frequency [kHz]
Figure 6
Application Note
Conducted emission measurements; Differences between IKW50N60T and IKW50N60DTP
6
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
TRENCHSTOP™ Performance characteristics
Radiated HF-Field 30MHz - 1 GHz
Difference between TRENCHSTOPTM 60T and 60TP
10.00
horizontal
vertical
Level [dBµV/m]
5.00
0.00
-5.00
-10.00
-15.00
30
300
Frequency [MHz]
Figure 7
Radiated emission measurements; Differences between IKW50N60T and IKW50N60DTP
Results
The measurements showed that no new emission frequency spots occurred for IKW50N60DTP. Only small
differences in the absolute values are observed. Therefore, existing EMI circuits used in applications using the
TRENCHSTOPTM IGBTs may be used for the TRENCHSTOPTM Performance IGBTs without modifications (although
the final decision would depend on the specific application requirements).
Application Note
7
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
TRENCHSTOP™ Performance characteristics
2.3
Static characteristics
The 600 V TRENCHSTOPTM Performance technology has slightly higher static losses than the original 60T
products.
The following figure shows the collector-emitter saturation voltage VCE(sat) as a function of the junction
temperature Tj. The temperature gradient of the IKW50N60DTP is positive allowing a paralleling of device.
VCE(sat)=f(Tj)
2
1.75
VCE(sat) [V]
1.5
1.25
1
IKW50N60DTP @ IC=50A
IKW50N60T @ IC=50A
0.75
IKW50N60DTP @ IC=25A
IKW50N60T @ IC=25A
0.5
25
45
65
85
105
125
145
165
Tj [°C]
Figure 8
VCE(sat) as a function of the Tj for two currents
Figure 4 highlights the static diode losses versus junction temperature. The IKW50N60T uses a full rated emitter
controlled diode, with 20 mV lower forward voltage VF than Rapid 1 diode used in the IKW50N60DTP at Tj = 25°C.
Note:
The temperature characteristic shown in Figure 9 is a simplification. For more details please refer to
the appropriate datasheets.
Application Note
8
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
TRENCHSTOP™ Performance characteristics
VF=f(Tj)
1.4
1.35
1.3
VF [V]
1.25
1.2
1.15
1.1
IKW50N60DTP @ IC=25A
1.05
IKW50N60T @ IC=25A
1
25
45
65
85
105
125
145
165
Tj [°C]
Figure 9
2.4
VF as a function of the Tj
Dynamic characteristics
The IKW50N60DTP has lower total switching losses compared to the IKW50N60T thanks to lower diode reverse
recovery losses and a strongly reduced current tail. The higher the switching frequency in the application is, the
bigger the efficiency improvement of the TRENCHSTOPTM Performance technology is.
Figure 9 to Figure 14 show the switching behavior of both technologies in a double-pulse test setup for the
following conditions:
 Hard switching condition
 Tj = 100 °C
 IC = 25 A
 RG = 14.6 Ω
 The high and low side IGBTs are always of the same product type
Application Note
9
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
TRENCHSTOP™ Performance characteristics
IC = 33 A at VCE = 8 V
Figure 10
Turn on of IKW50N60T
IC = 26 A at VCE = 8 V
Figure 11
Turn on of IKW50N60DTP
IKW50N60DTP has a significant lower reverse recovery charge Qrr due to the use of the latest Rapid diode
technology.
Note:
The turn on energy is calculated as shown in Figure 12 between the points VGE = 10 % VGEon and
VCE = 2 % VCEoff. The collector current at the voltage VCE = 8 V (2 % VCEoff) is IC = 26 A for the IKW50N60DTP,
but IC = 33 A for the IKW50N60T. Therefore the total IKW50N60T’s turn on losses are slightly higher
than the measured ones in this document, if the losses after VCE = 2 % VCEoff until IC reaches IC = 26 A are
considered too. For the example shown in Figure 10 the turn on losses increase by ≈1.3 %, if the energy
is calculated until the collector current IC reaches the value IC = 26 A.
Application Note
10
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
TRENCHSTOP™ Performance characteristics
Figure 12
Definition of switching losses according datasheet
Figure 13
Turn off of IKW50N60T
Application Note
11
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
TRENCHSTOP™ Performance characteristics
Figure 14
Turn off of IKW50N60DTP
The IKW50N60DTP has a significantly reduced current tail, which leads to a 30% lower turn off energy at the
same voltage overshoot compared to IKW50N60T.
Figure 15 gives the switching losses’ comparisons for IC = 25 A.
Typical gate charge Tj = 25 °C
15
12.5
VGE [V]
10
7.5
5
IKW50N60DTP
2.5
IKW50N60T
0
0
50
100
150
200
250
300
QG [nC]
Figure 15
Switching energies as a function of Tj for IC = 25 A
The turn-on energies are comparable for both products, but the turn-off energy of the IKW50N60DTP is, thanks
to the low current tail, significantly lower. As a result the total switching losses are significantly lower. The total
Application Note
12
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
TRENCHSTOP™ Performance characteristics
switching losses of the IKW50N60DTP at Tj = 100 °C are about 19 % lower compared to the IKW50N60T. This
allows improved application efficiencies as shown in chapter 2.1.
2.5
Gate charge
The IGBT’s gate charge determines the gate driver output power capabilities. The TRENCHSTOPTM Performance
technology offers a 20 % reduced gate charge at VGE = 15 V compared to the existing TRENCHSTOPTM IGBTs.
Figure 16 provides the typical gate charge QG comparison for IC = 50 A.
Typical gate charge Tj = 25 °C
15
12.5
VGE [V]
10
7.5
5
IKW50N60DTP
2.5
IKW50N60T
0
0
50
100
150
200
250
300
QG [nC]
Figure 16
2.6
Gate charge for VCC = 480 V, IC = 50 A and Tj = 25 °C
Summary
In this application note, the comparison of the static and dynamic characteristics of the new TRENCHSTOPTM
Performance IGBTs gave a view of the improved performance in comparison to the existing TRENCHSTOPTM
IGBTs. The proof has been done by an application test on a motor test bench. At 15 kHz, an improved efficiency
of 0.6 % has been observed.
The EMI investigation has shown a marginal change in radiated and conducted emission of the 60 TP, with no
new frequency spots being observed.
As a result, the TRENCHSTOPTM Performance family can replace the 60 T family in most applications with no or
very little redesign effort. Furthermore, it offers a perfect fit for applications requiring short circuit robustness
at high efficiency and superior EMI performance.
Application Note
13
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
Symbols and terms
3
Symbols and terms
A
Anode
C
Collector, capacitance
diF/dt
Rate of diode current raise
dirr/dt
Peak rate of diode current fall during recovery process
E
Emitter, energy
Eoff
Turn-off loss energy
Eon
Turn-on loss energy
f
Frequency
G
Gate
I
Current
IC
Collector current
IF
Diode forward current
Qrr
Reverse recovery charge
QG
Gate charge
RG
Gate resistance
Rth(j-c), Rthjc
Thermal resistance junction to case
Tc
Case temperature
t
Time
Tj
Junction temperature
Tvj
Operation junction temperature
V
Voltage
Vbus
Bus voltage
VCEsat
Collector-emitter saturation voltage
VF
Diode forward voltage
VGE
Gate-emitter voltage
Application Note
14
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
References
4
[1]
References
Infineon Application note AN2015-13 V1.0 ‘Explanation of discrete IGBTs' datasheets’, September 2015
http://www.infineon.com/dgdl/Infineon-ApplicationNote_DiscreteIGBT_DatasheetExplanation-ANv01_00-EN.pdf?fileId=5546d462501ee6fd015023070b8b306d
Application Note
15
V1.0
2016-04-26
600 V TRENCHSTOP™ Performance versus TRENCHSTOP™
Discrete IGBT
Revision history
Revision history
Major changes since the last revision
Page or Reference
Description of change
--
First release
Application Note
16
V1.0
2016-04-26
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-26
Published by
Infineon Technologies AG
81726 Munich, Germany
©AN2016-18owners.
2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: [email protected]
Document reference
AN2016-18
IMPORTANT NOTICE
The information contained in this application note
is given as a hint for the implementation of the
product only and shall in no event be regarded as a
description or warranty of a certain functionality,
condition or quality of the product. Before
implementation of the product, the recipient of this
application note must verify any function and other
technical information given herein in the real
application.
Infineon
Technologies
hereby
disclaims any and all warranties and liabilities of
any kind (including without limitation warranties of
non-infringement of intellectual property rights of
any third party) with respect to any and all
information given in this application note.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
Similar pages