PANASONIC 2PG402

IGBTs
2PG402
Insulated Gate Bipolar Transistor
■ Features
unit: mm
● High breakdown voltage: VCES = 400V
● Allowing to control large current: IC(peak) = 130A
● Housed in the surface mounting package
2.5±0.1
2.5±0.1
6.5±0.1
5.3±0.1
4.35±0.1
3.0±0.1
0.2max.
5.5±0.1
7.3±0.1
9.8±0.1
■ Applications
■ Absolute Maximum Ratings (TC = 25°C)
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
400
V
Gate to emitter voltage
Collector current
VGES
±8
V
DC
IC
5
A
Pulse
ICP
130
A
Allowable power
TC = 25°C
dissipation
Ta = 25°C
10
PC
0.85±0.1
4.6±0.1
1
2
0.75±0.1
0.5±0.1
0.05 to 0.15
3
2.3±0.1
Parameter
1.0±0.2
2.3±0.1
● For flash-light for use in a camera
1.0±0.1
1: Emitter
2: Collector
3: Gate
U Type Package
Marking
W
1
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
Collector to emitter cut-off current
ICES
VCE = 320V, VGE = 0
Gate to emitter leakage current
IGES
VGE = ±8V, VCE = 0
Collector to emitter breakdown voltage
VCES
IC = 1mA, VGE = 0
400
Gate threshold voltage
VGE(th)
VCE = 10V, IC = 1mA
0.5
Collector to emitter
saturation voltage
VCE(sat)
typ
max
Unit
10
µA
±1
µA
V
1.5
VGE = 5V, IC = 5A
2
VGE = 5V, IC = 130A
10
VCE = 10V, VGE = 0, f = 1MHz
1930
V
V
Input capacitance (Common Emitter)
Cies
pF
Turn-on time (delay time)
td(on)
130
ns
Rise time
tr
VCC = 300V, IC = 130A
1.4
µs
Turn-off time (delay time)
td(off)
VGE = 5V, Rg = 25Ω
350
ns
Fall time
tf
1.5
µs
1
IGBTs
2PG402
VCE(sat)  IC
Collector current IC (A)
TC=25˚C
160
VGE=8V
5V
4V
120
80
3V
40
2V
0
0
4
8
12
16
20
24
10
3
Ta=0˚C
1
0.3
0.1
0.01
1
10
100
1000
100
Coes
Cres
1
Collector power dissipation PC (W)
1000
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
12
(1)
9
6
(2)
3
(3)
0
0
100
200
300
400
Collector to emitter voltage VCE (V)
120
80
0
25
50
75
100
125
0
2
4
6
8
10
12
Gate to emitter voltage VGE (V)
PC  Ta
Cies
160
0
0.1
15
f=1MHz
TC=25˚C
VCE=10V
TC=25˚C
40
Cies, Coes, Cres  VCE
Input capacitance (Common emitter), Output capacitance (Common emitter),
Reverse transfer capacitance (Common emitter) Cies,Coes,Cres (pF)
25˚C
100˚C
Collector current IC (A)
10000
2
200
VGE=5V
TC=25˚C
Collector to emitter voltage VCE (V)
10
IC  VGE
Collector current IC (A)
200
Collector to emitter saturation voltage VCE(sat) (V)
IC  VCE
150
Ambient temperature Ta (˚C)