BD249, BD249A, BD249B, BD249C

BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD250 Series
●
125 W at 25°C Case Temperature
●
25 A Continuous Collector Current
●
40 A Peak Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-emitter voltage (RBE = 100 Ω)
E
T
E
L
O
S
B
O
Collector-emitter voltage (IC = 30 mA)
BD249B
VCER
70
90
BD249C
115
BD249
45
BD249A
BD249B
UNIT
55
BD249
BD249A
VALUE
V CEO
BD249C
60
80
V
V
100
VEBO
5
V
IC
25
A
ICM
40
A
IB
5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
125
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3
W
½LIC2
90
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
250
°C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 1 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 5)
BD249
45
BD249A
60
BD249B
80
BD249C
100
TYP
MAX
V
VCE = 55 V
VBE = 0
BD249
0.7
Collector-emitter
VCE = 70 V
VBE = 0
BD249A
0.7
cut-off current
VCE = 90 V
VBE = 0
BD249B
0.7
VCE = 115 V
VBE = 0
BD249C
0.7
Collector cut-off
VCE = 30 V
IB = 0
BD249/249A
1
current
VCE = 60 V
IB = 0
BD249B/249C
1
VEB =
5V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
1
VCE =
4V
IC = 1.5 A
VCE =
4V
IC = 15 A
VCE =
4V
IC = 25 A
Collector-emitter
IB =
1.5 A
IC = 15 A
saturation voltage
IB =
5A
IC = 25 A
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
4V
IC = 15 A
4V
IC = 25 A
mA
mA
mA
25
(see Notes 5 and 6)
10
5
1.8
(see Notes 5 and 6)
4
E
T
E
L
O
S
B
O
VCE =
VCE =
UNIT
2
(see Notes 5 and 6)
VCE = 10 V
IC =
1A
f = 1 kHz
25
VCE = 10 V
IC =
1A
f = 1 MHz
3
4
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1
°C/W
RθJA
Junction to free air thermal resistance
42
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 5 A
IB(on) = 0.5 A
IB(off) = -0.5 A
0.3
µs
toff
Turn-off time
VBE(off) = -5 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.9
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS635AD
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1
0·1
1·0
TCS635AB
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
1·0
0·1
E
T
E
L
O
S
B
O
10
100
IC = 300 mA
IC = 1 A
IC = 3 A
0·01
0·001
0·01
IC - Collector Current - A
0·1
10
25 A
20 A
15 A
10 A
100
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
2·0
1·8
VBE - Base-Emitter Voltage - V
1·0
IC =
IC =
IC =
IC =
TCS635AC
VCE = 4 V
TC = 25°C
1·6
1·4
1·2
1·0
0·8
0·6
0·1
1·0
10
100
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD249, BD249A, BD249B, BD249C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS635AB
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
10
1·0
0·1
BD249
BD249A
BD249B
BD249C
E
T
E
L
O
S
B
O
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS635AA
Ptot - Maximum Power Dissipation - W
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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