BUX84

BUX84
NPN SILICON POWER TRANSISTOR
40 W at 25°C Case Temperature
TO-220 PACKAGE
(TOP VIEW)
2 A Continuous Collector Current
3 A Peak Collector Current
B
1
Typical tf = 200 ns at 25°C
C
2
E
3
This series is obsolete and
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Continuous collector current
SYMBOL
VALUE
UNIT
VCBO
800
V
400
V
VCES
E
T
E
L
O
S
B
O
Peak collector current (see Note 1)
V CEO
IC
ICM
Continuous device dissipation at (or below) 25°C case temperature
Ptot
Storage temperature range
Tstg
Operating junction temperature range
NOTE
Tj
800
2
3
40
-65 to +150
-65 to +150
V
A
A
W
°C
°C
1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BUX84
NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
ICES
IEBO
hFE
V CE(sat)
VBE(sat)
ft
Cob
NOTES: 2.
3.
4.
5.
Collector-emitter
sustaining voltage
TEST CONDITIONS
IC =
0.1 A
L = 25 mH
Collector-emitter
VCE = 800 V
VBE = 0
cut-off current
VCE = 800 V
VBE = 0
VEB =
5V
IC = 0
VCE =
5V
IC = 0.1 A
IC = 0.3 A
Emitter cut-off
current
Forward current
transfer ratio
IB =
0.03 A
saturation voltage
IB =
0.2 A
IC =
1A
IB =
0.2 A
IC =
1A
VCE =
10 V
IC = 0.2 A
VCB =
20 V
IE = 0
saturation voltage
Current gain
bandwidth product
Output capacitance
(see Note 2)
MAX
400
V
0.2
TC = 125°C
1
(see Notes 3 and 4)
UNIT
mA
mA
35
0.8
(see Notes 3 and 4)
1
(see Notes 3 and 4)
1.1
f = 0.1 MHz
V
V
12
MHz
60
pF
Inductive loop switching measurement.
These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
E
T
E
L
O
S
B
O
PARAMETER
RθJC
TYP
1
Collector-emitter
Base-emitter
MIN
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
2.5
°C/W
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
ton
Turn on time
ts
Storage time
tf
Fall time
tf
†
Fall time
TEST CONDITIONS
†
IC = 1 A
IB(on) = 0.2 A
VCC = 250 V
(see Figures 1 and 2)
IC = 1 A
IB(on) = 0.2 A
VCC = 250 V
TC = 95°C
MIN
IB(off) = -0.4 A
IB(off) = -0.4 A
MAX
0.25
0.5
UNIT
µs
1.8
µs
0.2
µs
0.4
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BUX84
NPN SILICON POWER TRANSISTOR
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
680 µF
120 Ω
T
V1
100 Ω
100 µF
47 Ω
tp
V cc = 250 V
TUT
15 Ω
V1
100 Ω
680 µF
82 Ω
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
Figure 1. Resistive-Load Switching Test Circuit
E
T
E
L
O
S
B
O
C
90%
90%
E
IC
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = t off
B
10%
10%
90%
D
F
0%
dIB
≥ 2 A/µs
dt
IB
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BUX84
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCP741AJ
100
10
ICES - Collector Cut-off Current - µA
hFE - Typical DC Current Gain
VCE = 5 V
TC = 25°C
10
1·0
0·1
TCP741AK
VCE = 800 V
VBE = 0
1·0
0·1
0·01
E
T
E
L
O
S
B
O
1·0
5·0
0·001
-60
-30
IC - Collector Current - A
0
30
60
90
120
150
TC - Case Temperature - °C
Figure 3.
Figure 4.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAP770AB
1·0
0·1
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BUX84
NPN SILICON POWER TRANSISTOR
ZθJC / RθJC - Normalised Transient Thermal Impedance
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
TCP741AL
1·0
50%
20%
10%
0·1
5%
duty cycle = t1/t2
Read time at end of t1,
t1
t2
E
T
E
L
O
S
B
O
TJ(max) - TC = PD(peak) ·
0·01
10-5
10-4
10-3
( )
10-2
ZθJC
RθJC
· R θJC(max)
10-1
100
t1 - Power Pulse Duration - s
Figure 6.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
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