ISC BUX84

Inchange Semiconductor
Product Specification
BUX84 BUX85
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High switching speed
APPLICATIONS
・Suitable for switching power supplies
in TV sets
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolut maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BUX84
VCBO
Collector-base voltage
400
Open base
BUX85
VEBO
Emitter-base voltage
V
1000
BUX84
Collector-emitter voltage
UNIT
800
Open emitter
BUX85
VCEO
VALUE
V
450
Open collector
10
V
IC
Collector current
2
A
ICM
Collector current-peak
3
A
IB
Base current
0.75
A
IBM
Base current-peak
1
A
Ptot
Total power dissipation
40
W
TC=25℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
2.5
K/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to mounting flange
Inchange Semiconductor
Product Specification
BUX84 BUX85
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUX84
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
400
IC=100mA ; IB=0;L=25mH
BUX85
V
450
VCEsat-1
Collector-emitter saturation voltage
IC=0.3A ;IB=0.03A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=1A ;IB=0.2A
3.0
V
Base-emitter saturation voltage
IC=1A ;IB=0.2A
1.1
V
BUX84
VCES=800V; VBE=0
Tj=125℃
1.0
1.5
BUX85
VCES=1000V; VBE=0
Tj=125℃
0.2
1.5
1.0
VBEsat
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
hFE-2
DC current gain
IC=0.5A ; VCE=5V
15
Transition frequency
IC=0.2A ;VCE=10V;f=1.0MHz
fT
mA
100
20
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A ;VCC=250V
IB1=0.2A;IB2=-0.4A
0.2
0.5
μs
2
3.5
μs
0.4
2
μs
Inchange Semiconductor
Product Specification
BUX84 BUX85
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3