BGS22W2L10 Data Sheet (1.8 MB, EN)

BGS22W2L10
DPDT (Dual-Pole / Double-Throw) Differential RF Switch
Data Sheet
Revision 1.4 - October 12, 2012
Power Management & Multimarket
Edition October 12, 2012
Published by
Infineon Technologies AG
81726 Munich, Germany
c
2011
Infineon Technologies AG
All Rights Reserved.
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BGS22W2L10
Revision History
Previous Version: v1.3, October 11, 2012
Page
Subjects (major changes since last revision)
8
Updated BGS22W2L10 Block Diagram (Figure 1)
10
Updated RF Characteristics (Table 6)
11
Updated Pin Configuration (Table 7)
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Last Trademarks Update 2010-06-09
Data Sheet
3
Revision 1.4 - October 12, 2012
BGS22W2L10
Contents
1 Features
7
2 Product Description
7
3 Maximum Ratings
9
4 Operation Ranges
9
5 RF Characteristics
10
6 Package Outline and Pin Configuration
11
Data Sheet
4
Revision 1.4 - October 12, 2012
BGS22W2L10
List of Figures
1
2
3
4
5
BGS22W2L10 Block Diagram . . . . . . . . . . . . . . .
Marking Layout (top view) . . . . . . . . . . . . . . . . .
TSLP-10-1 Package Outline (top, side and bottom view)
Footprint TSLP-10-1 . . . . . . . . . . . . . . . . . . . .
Tape and Reel Dimensions for TSLP-10-1 . . . . . . . .
Data Sheet
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Revision 1.4 - October 12, 2012
BGS22W2L10
List of Tables
1
2
3
4
5
6
7
8
Ordering Information
Truth Table . . . . .
Maximum Ratings .
Operation Ranges .
RF Input Power . . .
RF Characteristics .
Pin Configuration . .
Mechanical Data . .
Data Sheet
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Revision 1.4 - October 12, 2012
BGS22W2L10
BGS22W2L10 DPDT (Dual-Pole / Double-Throw) Differential RF Switch
1 Features
• DPDT (Dual-Pole / Double-Throw) differential RF switch
• Frequency range: 0.1 - 2 GHz
• High signal power up to 24 dBm
• Supply voltage 2.4 - 3.6 V
• Low insertion loss
• High isolation
• Small package size of 1.55 x 1.15 mm2
• No decoupling capacitors required if no DC applied on RF lines
• RoHS compliant package
2 Product Description
The BGS22W2L10 is a DPDT (Dual-Pole / Double Throw) RF switch which combines two differential signals into
one differential output or splits one differential signal into two separate differential lines. The parallel paths of the
switch are controlled simultaneously through the same signals. The switch is designed to operate in battery powered
applications with a supply voltage range of 2.4 - 3.6 V . The highly symmetric design ensures best phase- and
amplitude accuracy.
A typical application is to combine two Rx paths in a mobile cellular device after the Rx filters or duplexers into one
input to the tranceiver IC. The IC can also be used for a wide variety of applications switching balanced signals in a
frequency range of 0.1 - 3 GHz. The RF switch is packaged in a standard RoHS compliant TSLP-10-1 package with
a small outline of only 1.55 x 1.15 mm2 .
No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port.
Table 1: Ordering Information
Type
Package
Marking
BGS22W2L10
TSLP-10-1
22W6
Data Sheet
7
Revision 1.4 - October 12, 2012
BGS22W2L10
BGS22W2L10
Port 2P
Port 1P
Port 3P
Port 2N
Port 1N
Port 3N
DPDT
VDD
CTRL
ESD Protection
Figure 1: BGS22W2L10 Block Diagram
Table 2: Truth Table
Pin No.
CRTL
Port 1 to Port 2
0
Port 1 to Port 3
1
Data Sheet
8
Revision 1.4 - October 12, 2012
BGS22W2L10
3 Maximum Ratings
Table 3: Maximum Ratings at TA = 25 ◦ C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Supply Voltage
VDD
-0.5
–
5.5
V
–
Control Voltage
VCtrl
-0.3
–
3.6
V
–
◦
C
–
Storage Temperature Range
TSTG
-55
–
150
RF Input Power
PIn
–
–
26
dBm
–
ESD Capability Human Body Model
VESD_HBM
1000
–
–
V
–
◦
C
–
K/W
–
Junction Temperature
Tj
–
–
125
Thermal Resistance Junction - Soldering
RthJS
–
–
43
Point
Attention:
Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Min.
Typ.
Max.
Supply Voltage
VDD
2.4
–
Control Voltage Low
VCtrl_L
-0.3
Control Voltage High
VCtrl_H
RF Frequency
fRF
Ambient Temperature
TA
Values
Unit
Note / Test Condition
3.6
V
–
–
0.4
V
–
1.2
–
VDD
V
–
0.1
–
2
GHz
–
85
◦
–
-30
25
C
Table 5: RF Input Power
Parameter
RF Input Power (50Ω)
Data Sheet
Symbol
PIn
Values
Min.
Typ.
Max.
–
–
24
9
Unit
Note / Test Condition
dBm
–
Revision 1.4 - October 12, 2012
BGS22W2L10
5 RF Characteristics
Table 6: RF Characteristics
Test Conditions (unless otherwise specified):
• Terminating Port Impedance: Z0 = 50 Ω
• Temperature Range: TA = -30 ... +85 ◦ C
• Supply Voltage: VDD = 2.4 − 3.6 V
• Input Power: PIN = 0 dBm
Parameter
Symbol
Values
Unit
Note / Test Condition
0.36
dB
824 - 915 MHz
0.39
0.61
dB
1710 - 1910 MHz
0.20
0.22
0.30
dB
824 - 915 MHz
0.36
0.39
0.50
dB
1710 - 1910 MHz
22
27
36
dB
824 - 915 MHz
14
17
20
dB
1710 - 1910 MHz
31
35
39
dB
824 - 915 MHz
22
27
30
dB
1710 - 1910 MHz
28
28.5
29
dBm
1000 MHz
-85
-80
dBc
21 dBm, 50Ω, 25 % Duty Cycle
Min.
Typ.
Max.
0.17
0.22
0.32
Insertion Loss
IL
1
Insertion Loss
IL
Return Loss
RL
Isolation
ISO
1
P0.1 dB Compression Point
P0.1dB
Harmonic Generation up to 12.75 GHz
Any Path
PHarm
-95
1
Intermodulation Distortion in Rx Band
IMD2_Low
PIMD2_L
-125
-115
-110
dBm
IMD3
PIMD3
-125
-115
-110
dBm
IMD2_High
PIMD2_H
-125
-115
-110
dBm
Tx = 10 dBm, Interferer = -15 dBm
Switching Time and Current Consumption
RF Rise Time
t10%−90%
–
0.35
1
µs
10% - 90% of RF Signal
Ctrl to RF Time
tCtrl−RF
–
0.6
1.5
µs
50% of Ctrl Signal to 90% of RF
Signal
Supply Current
IDD
75
120
350
µA
–
PhErr
0.3
1
1.9
Deg.
–
Phase Error1
Between
any
two Paths
Note: All electrical characteristics are measured with all RF ports terminated by 50 Ω loads.
1
TA = +25 ◦ C, VDD = 3 V
Data Sheet
10
Revision 1.4 - October 12, 2012
BGS22W2L10
6 Package Outline and Pin Configuration
22W6
PIN1 Marking
Lasered
Date Code
YYWW
Type
Figure 2: Marking Layout (top view)
Table 7: Pin Configuration
Pin
Name
No.
Pin
Buffer
Type
Type
Function
1
Port 3P
I/O
Differential Output P of Port 3
2
GND
GND
Ground Pin
3
GND
GND
Ground Pin
4
Port 2N
I/O
Differential Output N of Port 2
5
Port 2P
I/O
Differential Output P of Port 2
6
CTRL
I
Control Voltage
7
Port 1P
I/O
Differential Input P of Port 1
8
Port 1N
I/O
Differential Input N of Port 1
9
VDD
PWR
Supply Voltage
10
Port 3N
I/O
Differential Output N of Port 3
Data Sheet
11
Revision 1.4 - October 12, 2012
BGS22W2L10
Table 8: Mechanical Data
Parameter
Symbol
Value
Unit
Package X-Dimension
X
1.55 ± 0.05
mm
Package Y-Dimension
Y
1.15 ± 0.05
mm
Package Area
A
1.783
mm2
Package Height
H
0.39 +0.01/-0.03
mm
Top view
Bottom view
0.39 +0.01
-0.03
1.15 ±0.05
0.2 ±0.05
0.05 MAX.
6
3
7
2
8
1
9
0.2 ±0.0351)
Pin 1 marking
1) Dimension applies to plated terminals
1.55 ±0.05
4
0.2 ±0.0351)
0.2 ±0.05
5
10
TSLP-10-1-PO V01
Figure 3: TSLP-10-1 Package Outline (top, side and bottom view)
Data Sheet
12
Revision 1.4 - October 12, 2012
BGS22W2L10
NSMD
0.25
0.4
0.4
0.25
0.25
0.4
0.4
Copper
(stencil thickness 100 µm)
Stencil apertures
Solder mask
TSLP-10-1-FP V01
Figure 4: Footprint TSLP-10-1
0.5
Pin 1
marking
8
1.85
4
1.45
TSLP-10-1-TP V01
Figure 5: Tape and Reel Dimensions for TSLP-10-1
Data Sheet
13
Revision 1.4 - October 12, 2012
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Published by Infineon Technologies AG
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