English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
EasyPACK模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管带有pressfit压接管脚和温度检测NTC
EasyPACKmodulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandPressFIT/NTC
J
VCES = 600V
IC nom = 50A / ICRM = 100A
典型应用
• 三电平应用
• 太阳能应用
• UPS系统
TypicalApplications
• 3-Level-Applications
• SolarApplications
• UPSSystems
电气特性
• 低电感设计
• 低开关损耗
• 低VCEsat
ElectricalFeatures
• Lowinductivedesign
• LowSwitchingLosses
• LowVCEsat
机械特性
• 低热阻的三氧化二铝(Al2O3衬底
• 紧凑型设计
• PressFIT压接技术
• 集成的安装夹使安装坚固
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• Compactdesign
• PressFITContactTechnology
• Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CM
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
600
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
50
75
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
100
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
175
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
A
A
typ.
max.
1,45
1,60
1,70
1,90
V
V
V
5,8
6,5
V
栅极阈值电压
Gatethresholdvoltage
IC = 0,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,50
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
3,10
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,095
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 600 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGon = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGon = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGoff = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGoff = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 50 A, VCE = 300 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 3000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 8,2 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
4,9
0,025
0,025
0,025
µs
µs
µs
0,013
0,016
0,017
µs
µs
µs
0,18
0,20
0,21
µs
µs
µs
0,06
0,075
0,085
µs
µs
µs
Eon
0,20
0,35
0,40
mJ
mJ
mJ
IC = 50 A, VCE = 300 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4400 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 8,2 Ω
Tvj = 150°C
Eoff
1,20
1,50
1,60
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
350
250
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,75
0,85 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,70
K/W
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
td on
tr
td off
tf
Tvj op
preparedby:CM
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
2
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 600
V
IF
50
A
IFRM
100
A
I²t
370
330
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
1,95
VF
1,55
1,50
1,45
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
74,0
87,0
91,0
A
A
A
IF = 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
2,30
4,70
5,10
µC
µC
µC
IF = 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,70
1,30
1,50
mJ
mJ
mJ
正向电压
Forwardvoltage
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
恢复电荷
Recoveredcharge
反向恢复损耗(每脉冲)
Reverserecoveryenergy
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,00
1,10 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,85
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:CM
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
3
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
二极管,D5-D6/Diode,D5-D6
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 600
V
IF
50
A
IFRM
100
A
I²t
560
500
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
1,90
VF
1,50
1,45
1,40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
74,0
87,0
91,0
A
A
A
IF = 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)
VR = 300 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
2,30
4,70
5,10
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)
VR = 300 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,70
1,30
1,50
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,80
0,90 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,70
K/W
正向电压
Forwardvoltage
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)
VR = 300 V
恢复电荷
Recoveredcharge
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
V
V
V
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
∆R/R
5,00
-5
P25
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CM
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
4
kΩ
5
%
20,0
mW
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
10,0
5,0
mm
> 200
相对电痕指数
Comperativetrackingindex
VISOL CTI
min.
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
nH
RCC'+EE'
2,00
mΩ
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
20
重量
Weight
G
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
5
max.
15
-40
preparedby:CM
typ.
LsCE
Tstg
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
kV
2,5
24
125
°C
50
N
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
100
100
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0,0
0,5
1,0
VGE = 19 V
VGE = 17 V
VGE = 15 V
VGE = 13 V
VGE = 11 V
VGE = 9 V
90
IC [A]
IC [A]
90
1,5
VCE [V]
2,0
2,5
0
3,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
80
90
100
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=8.2Ω,RGoff=8.2Ω,VCE=300V
100
3,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
90
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
2,5
80
70
2,0
E [mJ]
IC [A]
60
50
1,5
40
1,0
30
20
0,5
10
0
5
6
7
8
9
VGE [V]
10
11
0,0
12
preparedby:CM
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
6
0
10
20
30
40
50 60
IC [A]
70
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=50A,VCE=300V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
6,0
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
5,0
ZthJH : IGBT
1
ZthJH [K/W]
E [mJ]
4,0
3,0
2,0
0,1
1,0
0,0
i:
1
2
3
4
ri[K/W]: 0,083 0,193 0,586 0,588
τi[s]:
0,0005 0,005 0,05 0,2
0
10
20
30
40
50
RG [Ω]
60
70
80
0,01
0,0001
90
0,1
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
110
100
IC, Modul
IC, Chip
100
90
90
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
80
80
70
70
60
60
IF [A]
IC [A]
0,01
t [s]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=8.2Ω,Tvj=150°C
50
50
40
40
30
30
20
20
10
10
0
0,001
0
100
200
300
400 500
VCE [V]
600
700
0
800
preparedby:CM
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
7
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=8.2Ω,VCE=300V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=50A,VCE=300V
2,8
2,4
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
2,4
2,0
2,0
1,6
E [mJ]
E [mJ]
1,6
1,2
1,2
0,8
0,8
0,4
0,4
0,0
0
10
20
30
40
50 60
IF [A]
70
80
90
0,0
100
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
0
10
20
30
40
50
RG [Ω]
60
70
80
90
正向偏压特性二极管,D5-D6(典型)
forwardcharacteristicofDiode,D5-D6(typical)
IF=f(VF)
10
100
ZthJH : Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
90
80
70
IF [A]
ZthJH [K/W]
60
1
50
40
30
20
i:
1
2
3
4
ri[K/W]: 0,157 0,337 0,758 0,598
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
10
0
10
preparedby:CM
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
8
0,0
0,4
0,8
1,2
VF [V]
1,6
2,0
2,4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
开关损耗二极管,D5-D6(典型)
switchinglossesDiode,D5-D6(typical)
Erec=f(IF)
RGon=8.2Ω,VCE=300V
开关损耗二极管,D5-D6(典型)
switchinglossesDiode,D5-D6(typical)
Erec=f(RG)
IF=50A,VCE=300V
2,8
2,4
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
2,4
2,0
2,0
1,6
E [mJ]
E [mJ]
1,6
1,2
1,2
0,8
0,8
0,4
0,4
0,0
0
10
20
30
40
50 60
IF [A]
70
80
90
0,0
100
瞬态热阻抗二极管,D5-D6
transientthermalimpedanceDiode,D5-D6
ZthJH=f(t)
0
10
20
30
40
50
RG [Ω]
60
70
80
90
140
160
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
10
100000
ZthJH : Diode
Rtyp
R[Ω]
ZthJH [K/W]
10000
1
1000
i:
1
2
3
4
ri[K/W]: 0,118 0,26 0,617 0,505
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
100
10
preparedby:CM
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
9
0
20
40
60
80
100
TC [°C]
120
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
Infineon
preparedby:CM
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L50R06W1E3_B11
使用条件和条款
使用条件和条款
产品规格书中的数据是专门为技术人员提供的,您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
产品规格书中所描述的产品特性是被保证的,任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外,产品和产品的特性没有任何的保证
请注意安装及应用指南中的信息。
如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话,请联系我们负责你的销售部门(详情查询
www.infineon.com)。对那些特别感兴趣的问题我们将提供相应的应用手册
由于技术需要,我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门
如果您想将我们的产品用于航天,健康,危及生命或者生命维持等应用,请申明。
请注意,对这类应用我们强烈建议
-执行联合的风险和质量评估
-得到质量协议的结论
-建立联合的测试和出厂产品检查,我们可以根据测试的实际情况供货
如果有必要,请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
preparedby:CM
dateofpublication:2014-03-13
approvedby:AKDA
revision:3.1
11
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