English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
EasyPACK模块带有pressfit压接管脚和温度检测NTC
EasyPACKmoduleandPressFIT/NTC
初步数据/PreliminaryData
VCES = 1200V
IC nom = 40A / ICRM = 80A
典型应用
• 高频开关应用
• 太阳能应用
TypicalApplications
• HighFrequencySwitchingApplication
• SolarApplications
电气特性
• 增加阻断电压至650V
• 高速IGBTH3
• 低电感设计
• 低VCEsat
ElectricalFeatures
• Increasedblockingvoltagecapabilityto650V
• HighSpeedIGBTH3
• LowInductiveDesign
• LowVCEsat
机械特性
• 2.5kV交流1分钟绝缘
• PressFIT压接技术
• 符合RoHS
• 集成的安装夹使安装坚固
MechanicalFeatures
• 2.5kVAC1minInsulation
• PressFITContactTechnology
• RoHScompliant
• Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
IGBT,降壓轉換器的/IGBT,Buck
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 175°C
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
栅极-发射极峰值电压
Gate-emitterpeakvoltage
1200
V
IC nom 40
A
ICRM
80
A
Ptot
215
W
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
typ.
max.
2,05
2,50
2,60
2,40
V
V
V
5,8
6,5
V
栅极阈值电压
Gatethresholdvoltage
IC = 1,00 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,185
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
2,35
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,13
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 40 A, VCE = 600 V
VGE = ±15 V
RGon = 12 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 40 A, VCE = 600 V
VGE = ±15 V
RGon = 12 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 40 A, VCE = 600 V
VGE = ±15 V
RGoff = 12 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 40 A, VCE = 600 V
VGE = ±15 V
RGoff = 12 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 40 A, VCE = 600 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 1900 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 12 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,0
0,02
0,02
0,023
µs
µs
µs
0,02
0,02
0,02
µs
µs
µs
0,22
0,26
0,28
µs
µs
µs
0,025
0,035
0,04
µs
µs
µs
Eon
2,50
3,70
4,00
mJ
mJ
mJ
IC = 40 A, VCE = 600 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4700 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 12 Ω
Tvj = 150°C
Eoff
1,50
2,35
2,50
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
130
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,55
0,70 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,55
K/W
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 10 µs, Tvj = 150°C
td on
tr
td off
tf
Tvj op
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
2
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
反向二极管/Diode,Reverse
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
VRRM Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
10
A
IFRM
20
A
I²t
16,0
14,0
min.
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
V
IF
特征值/CharacteristicValues
正向电压
Forwardvoltage
1200
typ.
max.
2,25
VF
1,75
1,75
1,75
A²s
A²s
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,75
1,90 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,30
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
°C
Diode,降壓轉換器的/Diode,Buck
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
VRRM Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
1200
V
IF
15
A
IFRM
30
A
I²t
90,0
75,0
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
2,55
VF
2,00
1,70
1,65
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
30,0
40,0
40,0
A
A
A
IF = 15 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
0,70
2,50
3,00
µC
µC
µC
IF = 15 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,40
0,85
1,10
mJ
mJ
mJ
正向电压
Forwardvoltage
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 15 A, - diF/dt = 1500 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
恢复电荷
Recoveredcharge
反向恢复损耗(每脉冲)
Reverserecoveryenergy
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,95
1,05 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,85
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
3
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
IGBT,轉換器/IGBT,Boost
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
集电极电流
Implementedcollectorcurrent
VCES
650
V
ICN
50
A
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
IC nom 40
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
100
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
200
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
typ.
max.
1,55 t.b.d.
1,70
1,70
V
V
V
5,8
V
栅极阈值电压
Gatethresholdvoltage
IC = 0,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,50
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
2,95
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,096
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 40 A, VCE = 350 V
VGE = ±15 V
RGon = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 40 A, VCE = 350 V
VGE = ±15 V
RGon = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 40 A, VCE = 350 V
VGE = ±15 V
RGoff = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 40 A, VCE = 350 V
VGE = ±15 V
RGoff = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 40 A, VCE = 350 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 3200 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 6,8 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
4,9
6,5
0,02
0,02
0,02
µs
µs
µs
0,01
0,013
0,013
µs
µs
µs
0,03
0,065
0,07
µs
µs
µs
0,012
0,013
0,014
µs
µs
µs
Eon
0,33
0,47
0,50
mJ
mJ
mJ
IC = 40 A, VCE = 350 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 5000 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 6,8 Ω
Tvj = 150°C
Eoff
0,60
0,85
0,95
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
180
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
tP ≤ 5 µs, Tvj = 150°C
td on
tr
td off
tf
RthJC
4
0,60
0,75 K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
0,85
Tvj op
-40
K/W
150
°C
Diode-斩波器/Diode-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 650
V
IF
15
A
IFRM
30
A
I²t
22,5
20,5
特征值/CharacteristicValues
正向电压
Forwardvoltage
min.
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
typ.
max.
2,00
VF
1,60
1,55
1,50
A²s
A²s
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
2,25
2,50 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,40
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
5
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
Diode,轉換器/Diode,Boost
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 650
V
IF
25
A
IFRM
50
A
I²t
50,0
A²s
特征值/CharacteristicValues
min.
正向电压
Forwardvoltage
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 25 A, - diF/dt = 2500 A/µs (Tvj=150°C)
VR = 350 V
VGE = -15 V
恢复电荷
Recoveredcharge
反向恢复损耗(每脉冲)
Reverserecoveryenergy
typ.
max.
VF
1,65 t.b.d.
1,60
1,55
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
38,0
43,0
45,0
A
A
A
IF = 25 A, - diF/dt = 2500 A/µs (Tvj=150°C)
VR = 350 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
0,90
1,60
1,90
µC
µC
µC
IF = 25 A, - diF/dt = 2500 A/µs (Tvj=150°C)
VR = 350 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,24
0,38
0,44
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,95
2,15 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,35
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
∆R/R
5,00
-5
P25
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
6
kΩ
5
%
20,0
mW
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
10,0
5,0
mm
> 200
相对电痕指数
Comperativetrackingindex
VISOL CTI
min.
杂散电感,模块
Strayinductancemodule
LsCE
储存温度
Storagetemperature
Tstg
-40
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
20
重量
Weight
G
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25 A rms per connector pin.
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
7
kV
2,5
typ.
max.
25
24
nH
125
°C
50
N
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
输出特性IGBT,降壓轉換器的(典型)
outputcharacteristicIGBT,Buck(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,降壓轉換器的(典型)
outputcharacteristicIGBT,Buck(typical)
IC=f(VCE)
Tvj=150°C
80
80
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
70
60
60
50
50
IC [A]
IC [A]
70
40
40
30
30
20
20
10
10
0
0,0
0,5
1,0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
1,5
2,0
VCE [V]
2,5
3,0
3,5
0
4,0
传输特性IGBT,降壓轉換器的(典型)
transfercharacteristicIGBT,Buck(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,降壓轉換器的(典型)
switchinglossesIGBT,Buck(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=12Ω,RGoff=12Ω,VCE=600V
80
10,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
70
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
9,0
8,0
60
7,0
6,0
E [mJ]
IC [A]
50
40
5,0
4,0
30
3,0
20
2,0
10
0
1,0
5
6
7
8
9
VGE [V]
10
11
0,0
12
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
8
0
10
20
30
40
IC [A]
50
60
70
80
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
开关损耗IGBT,降壓轉換器的(典型)
switchinglossesIGBT,Buck(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=40A,VCE=600V
瞬态热阻抗IGBT,降壓轉換器的
transientthermalimpedanceIGBT,Buck
ZthJH=f(t)
16,0
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
14,0
ZthJH : IGBT
12,0
1
ZthJH = f (t)
E [mJ]
10,0
8,0
6,0
0,1
4,0
i:
1
2
3
4
ri[K/W]: 0,051 0,117 0,426 0,506
τi[s]:
0,0005 0,005 0,05 0,2
2,0
0,0
0
0,01
0,001
10 20 30 40 50 60 70 80 90 100 110 120
RG [Ω]
反偏安全工作区IGBT,降壓轉換器的(RBSOA)
reversebiassafeoperatingareaIGBT,Buck(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=12Ω,Tvj=150°C
1
10
20
IC, Modul
IC, Chip
90
80
16
70
14
60
12
50
10
40
8
30
6
20
4
10
2
0
200
400
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
18
IF [A]
IC [A]
0,1
t [s]
正向偏压特性反向二极管(典型)
forwardcharacteristicofDiode,Reverse(typical)
IF=f(VF)
100
0
0,01
600
800
VCE [V]
1000
1200
0
1400
0,0
0,5
1,0
1,5
VF [V]
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
9
2,0
2,5
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
瞬态热阻抗反向二极管
transientthermalimpedanceDiode,Reverse
ZthJH=f(t)
正向偏压特性Diode,降壓轉換器的(典型)
forwardcharacteristicofDiode,Buck(typical)
IF=f(VF)
10
30
ZthJH : Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
27
24
21
IF [A]
ZthJH [K/W]
18
1
15
12
9
6
i:
1
2
3
4
ri[K/W]: 0,404 0,664 1,174 0,808
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
3
0
10
开关损耗Diode,降壓轉換器的(典型)
switchinglossesDiode,Buck(typical)
Erec=f(IF)
RGon=12Ω,VCE=600V
0,0
0,4
0,8
1,2
1,6
VF [V]
2,0
2,4
2,8
开关损耗Diode,降壓轉換器的(典型)
switchinglossesDiode,Buck(typical)
Erec=f(RG)
IF=15A,VCE=600V
1,6
1,4
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,4
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,2
1,2
1,0
1,0
E [mJ]
E [mJ]
0,8
0,8
0,6
0,6
0,4
0,4
0,2
0,2
0,0
0
3
6
9
12
15 18
IF [A]
21
24
27
0,0
30
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
10
0
5
10 15 20 25 30 35 40 45 50 55 60
RG [Ω]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
瞬态热阻抗Diode,降壓轉換器的
transientthermalimpedanceDiode,Buck
ZthJH=f(t)
输出特性IGBT,轉換器(典型)
outputcharacteristicIGBT,Boost(typical)
IC=f(VCE)
VGE=15V
10
80
ZthJH : Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
70
60
IC [A]
ZthJH [K/W]
50
1
40
30
20
i:
1
2
3
4
ri[K/W]: 0,15
0,323 0,739 0,588
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
10
0
0,00
10
输出特性IGBT,轉換器(典型)
outputcharacteristicIGBT,Boost(typical)
IC=f(VCE)
Tvj=150°C
2,00
2,50
80
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
70
60
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
70
60
50
IC [A]
50
IC [A]
1,00
1,50
VCE [V]
传输特性IGBT,轉換器(典型)
transfercharacteristicIGBT,Boost(typical)
IC=f(VGE)
VCE=20V
80
40
40
30
30
20
20
10
10
0
0,50
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
0
3,0
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
11
5
6
7
8
9
VGE [V]
10
11
12
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
开关损耗IGBT,轉換器(典型)
switchinglossesIGBT,Boost(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=6.8Ω,RGoff=6.8Ω,VCE=350V
开关损耗IGBT,轉換器(典型)
switchinglossesIGBT,Boost(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=40A,VCE=350V
2,4
5,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
2,2
2,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
4,5
4,0
1,8
3,5
1,6
3,0
E [mJ]
E [mJ]
1,4
1,2
1,0
2,5
2,0
0,8
1,5
0,6
1,0
0,4
0,5
0,2
0,0
0
10
20
30
40
IC [A]
50
60
70
0,0
80
瞬态热阻抗IGBT,轉換器
transientthermalimpedanceIGBT,Boost
ZthJH=f(t)
0
10
20
30
40
RG [Ω]
50
60
70
反偏安全工作区IGBT,轉換器(RBSOA)
reversebiassafeoperatingareaIGBT,Boost(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=6.8Ω,Tvj=150°C
10
120
ZthJH = f (t)
IC, Modul
IC, Chip
110
100
1
90
70
IC [A]
ZthJH [K/W]
80
0,1
60
50
40
0,01
30
20
i:
1
2
3
4
ri[K/W]: 0,084 0,195 0,587 0,585
τi[s]:
0,0005 0,005 0,05 0,2
0,001
0,001
0,01
0,1
t [s]
1
10
0
10
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
12
0
100
200
300
400 500
VCE [V]
600
700
800
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
正向偏压特性Diode-斩波器(典型)
forwardcharacteristicofDiode-Chopper(typical)
IF=f(VF)
瞬态热阻抗Diode-斩波器
transientthermalimpedanceDiode-Chopper
ZthJH=f(t)
30
10
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
ZthJH : Diode
25
ZthJH [K/W]
IF [A]
20
15
1
10
5
0
i:
1
2
3
4
ri[K/W]: 0,2803 0,8541 1,581 0,9342
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
VF [V]
正向偏压特性Diode,轉換器(典型)
forwardcharacteristicofDiode,Boost(typical)
IF=f(VF)
0,01
0,1
t [s]
1
10
开关损耗Diode,轉換器(典型)
switchinglossesDiode,Boost(typical)
Erec=f(IF)
RGon=6.8Ω,VCE=350V
50
0,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
45
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,7
40
0,6
35
0,5
E [mJ]
IF [A]
30
25
20
0,4
0,3
15
0,2
10
0,1
5
0
0,0
0,5
1,0
1,5
2,0
0,0
2,5
VF [V]
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
13
0
5
10
15
20
25 30
IF [A]
35
40
45
50
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
开关损耗Diode,轉換器(典型)
switchinglossesDiode,Boost(typical)
Erec=f(RG)
IF=25A,VCE=350V
瞬态热阻抗Diode,轉換器
transientthermalimpedanceDiode,Boost
ZthJC=f(t)
0,6
10
Erec, Tvj = 125°C
Erec, Tvj = 150°C
ZthJC : Diode
0,5
1
ZthJC [K/W]
E [mJ]
0,4
0,3
0,2
0,1
0,1
0,0
i:
1
2
3
4
ri[K/W]: 0,3013 0,7006 1,3873 0,9109
τi[s]:
0,0005 0,005 0,05
0,2
0
10
20
30
RG [Ω]
40
50
0,01
0,001
60
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TC [°C]
120
140
160
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
14
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
Infineon
preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
15
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FD-DF80R12W1H3_B52
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
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Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
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Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
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Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
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preparedby:CM
dateofpublication:2014-07-21
approvedby:MB
revision:2.0
16
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