技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 EasyPACK模块带有pressfit压接管脚和温度检测NTC EasyPACKmoduleandPressFIT/NTC 初步数据/PreliminaryData VCES = 1200V IC nom = 40A / ICRM = 80A 典型应用 • 高频开关应用 • 太阳能应用 TypicalApplications • HighFrequencySwitchingApplication • SolarApplications 电气特性 • 增加阻断电压至650V • 高速IGBTH3 • 低电感设计 • 低VCEsat ElectricalFeatures • Increasedblockingvoltagecapabilityto650V • HighSpeedIGBTH3 • LowInductiveDesign • LowVCEsat 机械特性 • 2.5kV交流1分钟绝缘 • PressFIT压接技术 • 符合RoHS • 集成的安装夹使安装坚固 MechanicalFeatures • 2.5kVAC1minInsulation • PressFITContactTechnology • RoHScompliant • Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData IGBT,降壓轉換器的/IGBT,Buck 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 175°C 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C 栅极－发射极峰值电压 Gate-emitterpeakvoltage 1200 V IC nom 40 A ICRM 80 A Ptot 215 W VGES +/-20 V 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 40 A, VGE = 15 V IC = 40 A, VGE = 15 V IC = 40 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat typ. max. 2,05 2,50 2,60 2,40 V V V 5,8 6,5 V 栅极阈值电压 Gatethresholdvoltage IC = 1,00 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 0,185 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 2,35 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,13 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = ±15 V RGon = 12 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 40 A, VCE = 600 V VGE = ±15 V RGon = 12 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = ±15 V RGoff = 12 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 40 A, VCE = 600 V VGE = ±15 V RGoff = 12 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 40 A, VCE = 600 V, LS = 25 nH Tvj = 25°C VGE = ±15 V, di/dt = 1900 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 12 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,0 0,02 0,02 0,023 µs µs µs 0,02 0,02 0,02 µs µs µs 0,22 0,26 0,28 µs µs µs 0,025 0,035 0,04 µs µs µs Eon 2,50 3,70 4,00 mJ mJ mJ IC = 40 A, VCE = 600 V, LS = 25 nH Tvj = 25°C VGE = ±15 V, du/dt = 4700 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 12 Ω Tvj = 150°C Eoff 1,50 2,35 2,50 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 130 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,55 0,70 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,55 K/W 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 150°C td on tr td off tf Tvj op preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 2 -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 反向二极管/Diode,Reverse 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage VRRM Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C 10 A IFRM 20 A I²t 16,0 14,0 min. IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C V IF 特征值/CharacteristicValues 正向电压 Forwardvoltage 1200 typ. max. 2,25 VF 1,75 1,75 1,75 A²s A²s V V V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,75 1,90 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,30 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 °C Diode,降壓轉換器的/Diode,Buck 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage VRRM Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C 1200 V IF 15 A IFRM 30 A I²t 90,0 75,0 特征值/CharacteristicValues min. A²s A²s typ. max. 2,55 VF 2,00 1,70 1,65 Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 30,0 40,0 40,0 A A A IF = 15 A, - diF/dt = 1500 A/µs (Tvj=150°C) VR = 600 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 0,70 2,50 3,00 µC µC µC IF = 15 A, - diF/dt = 1500 A/µs (Tvj=150°C) VR = 600 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,40 0,85 1,10 mJ mJ mJ 正向电压 Forwardvoltage IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent IF = 15 A, - diF/dt = 1500 A/µs (Tvj=150°C) VR = 600 V VGE = -15 V 恢复电荷 Recoveredcharge 反向恢复损耗（每脉冲） Reverserecoveryenergy V V V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,95 1,05 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,85 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 3 -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData IGBT,轉換器/IGBT,Boost 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C 集电极电流 Implementedcollectorcurrent VCES 650 V ICN 50 A 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 40 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 100 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 200 W VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 40 A, VGE = 15 V IC = 40 A, VGE = 15 V IC = 40 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat typ. max. 1,55 t.b.d. 1,70 1,70 V V V 5,8 V 栅极阈值电压 Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 0,50 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 2,95 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,096 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 40 A, VCE = 350 V VGE = ±15 V RGon = 6,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 40 A, VCE = 350 V VGE = ±15 V RGon = 6,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 40 A, VCE = 350 V VGE = ±15 V RGoff = 6,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 40 A, VCE = 350 V VGE = ±15 V RGoff = 6,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 40 A, VCE = 350 V, LS = 25 nH Tvj = 25°C VGE = ±15 V, di/dt = 3200 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 6,8 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 4,9 6,5 0,02 0,02 0,02 µs µs µs 0,01 0,013 0,013 µs µs µs 0,03 0,065 0,07 µs µs µs 0,012 0,013 0,014 µs µs µs Eon 0,33 0,47 0,50 mJ mJ mJ IC = 40 A, VCE = 350 V, LS = 25 nH Tvj = 25°C VGE = ±15 V, du/dt = 5000 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 6,8 Ω Tvj = 150°C Eoff 0,60 0,85 0,95 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 180 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 tP ≤ 5 µs, Tvj = 150°C td on tr td off tf RthJC 4 0,60 0,75 K/W 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions 0,85 Tvj op -40 K/W 150 °C Diode-斩波器/Diode-Chopper 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 650 V IF 15 A IFRM 30 A I²t 22,5 20,5 特征值/CharacteristicValues 正向电压 Forwardvoltage min. IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C typ. max. 2,00 VF 1,60 1,55 1,50 A²s A²s V V V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 2,25 2,50 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,40 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 5 -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData Diode,轉換器/Diode,Boost 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VRRM 650 V IF 25 A IFRM 50 A I²t 50,0 A²s 特征值/CharacteristicValues min. 正向电压 Forwardvoltage IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V IF = 25 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent IF = 25 A, - diF/dt = 2500 A/µs (Tvj=150°C) VR = 350 V VGE = -15 V 恢复电荷 Recoveredcharge 反向恢复损耗（每脉冲） Reverserecoveryenergy typ. max. VF 1,65 t.b.d. 1,60 1,55 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 38,0 43,0 45,0 A A A IF = 25 A, - diF/dt = 2500 A/µs (Tvj=150°C) VR = 350 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 0,90 1,60 1,90 µC µC µC IF = 25 A, - diF/dt = 2500 A/µs (Tvj=150°C) VR = 350 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,24 0,38 0,44 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,95 2,15 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,35 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 ∆R/R 5,00 -5 P25 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 6 kΩ 5 % 20,0 mW 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 11,5 6,3 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 10,0 5,0 mm > 200 相对电痕指数 Comperativetrackingindex VISOL CTI min. 杂散电感,模块 Strayinductancemodule LsCE 储存温度 Storagetemperature Tstg -40 Anpresskraft für mech. Bef. pro Feder mountig force per clamp F 20 重量 Weight G Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 7 kV 2,5 typ. max. 25 24 nH 125 °C 50 N g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 输出特性IGBT,降壓轉換器的（典型) outputcharacteristicIGBT,Buck(typical) IC=f(VCE) VGE=15V 输出特性IGBT,降壓轉換器的（典型) outputcharacteristicIGBT,Buck(typical) IC=f(VCE) Tvj=150°C 80 80 Tvj = 25°C Tvj = 125°C Tvj = 150°C 70 60 60 50 50 IC [A] IC [A] 70 40 40 30 30 20 20 10 10 0 0,0 0,5 1,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 传输特性IGBT,降壓轉換器的(典型) transfercharacteristicIGBT,Buck(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,降壓轉換器的（典型) switchinglossesIGBT,Buck(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=12Ω,RGoff=12Ω,VCE=600V 80 10,0 Tvj = 25°C Tvj = 125°C Tvj = 150°C 70 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 9,0 8,0 60 7,0 6,0 E [mJ] IC [A] 50 40 5,0 4,0 30 3,0 20 2,0 10 0 1,0 5 6 7 8 9 VGE [V] 10 11 0,0 12 preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 8 0 10 20 30 40 IC [A] 50 60 70 80 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 开关损耗IGBT,降壓轉換器的（典型) switchinglossesIGBT,Buck(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=40A,VCE=600V 瞬态热阻抗IGBT,降壓轉換器的 transientthermalimpedanceIGBT,Buck ZthJH=f(t) 16,0 10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 14,0 ZthJH : IGBT 12,0 1 ZthJH = f (t) E [mJ] 10,0 8,0 6,0 0,1 4,0 i: 1 2 3 4 ri[K/W]: 0,051 0,117 0,426 0,506 τi[s]: 0,0005 0,005 0,05 0,2 2,0 0,0 0 0,01 0,001 10 20 30 40 50 60 70 80 90 100 110 120 RG [Ω] 反偏安全工作区IGBT,降壓轉換器的（RBSOA） reversebiassafeoperatingareaIGBT,Buck(RBSOA) IC=f(VCE) VGE=±15V,RGoff=12Ω,Tvj=150°C 1 10 20 IC, Modul IC, Chip 90 80 16 70 14 60 12 50 10 40 8 30 6 20 4 10 2 0 200 400 Tvj = 25°C Tvj = 125°C Tvj = 150°C 18 IF [A] IC [A] 0,1 t [s] 正向偏压特性反向二极管（典型) forwardcharacteristicofDiode,Reverse(typical) IF=f(VF) 100 0 0,01 600 800 VCE [V] 1000 1200 0 1400 0,0 0,5 1,0 1,5 VF [V] preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 9 2,0 2,5 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 瞬态热阻抗反向二极管 transientthermalimpedanceDiode,Reverse ZthJH=f(t) 正向偏压特性Diode,降壓轉換器的（典型) forwardcharacteristicofDiode,Buck(typical) IF=f(VF) 10 30 ZthJH : Diode Tvj = 25°C Tvj = 125°C Tvj = 150°C 27 24 21 IF [A] ZthJH [K/W] 18 1 15 12 9 6 i: 1 2 3 4 ri[K/W]: 0,404 0,664 1,174 0,808 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 3 0 10 开关损耗Diode,降壓轉換器的（典型) switchinglossesDiode,Buck(typical) Erec=f(IF) RGon=12Ω,VCE=600V 0,0 0,4 0,8 1,2 1,6 VF [V] 2,0 2,4 2,8 开关损耗Diode,降壓轉換器的（典型) switchinglossesDiode,Buck(typical) Erec=f(RG) IF=15A,VCE=600V 1,6 1,4 Erec, Tvj = 125°C Erec, Tvj = 150°C 1,4 Erec, Tvj = 125°C Erec, Tvj = 150°C 1,2 1,2 1,0 1,0 E [mJ] E [mJ] 0,8 0,8 0,6 0,6 0,4 0,4 0,2 0,2 0,0 0 3 6 9 12 15 18 IF [A] 21 24 27 0,0 30 preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 10 0 5 10 15 20 25 30 35 40 45 50 55 60 RG [Ω] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 瞬态热阻抗Diode,降壓轉換器的 transientthermalimpedanceDiode,Buck ZthJH=f(t) 输出特性IGBT,轉換器（典型) outputcharacteristicIGBT,Boost(typical) IC=f(VCE) VGE=15V 10 80 ZthJH : Diode Tvj = 25°C Tvj = 125°C Tvj = 150°C 70 60 IC [A] ZthJH [K/W] 50 1 40 30 20 i: 1 2 3 4 ri[K/W]: 0,15 0,323 0,739 0,588 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 10 0 0,00 10 输出特性IGBT,轉換器（典型) outputcharacteristicIGBT,Boost(typical) IC=f(VCE) Tvj=150°C 2,00 2,50 80 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 70 60 Tvj = 25°C Tvj = 125°C Tvj = 150°C 70 60 50 IC [A] 50 IC [A] 1,00 1,50 VCE [V] 传输特性IGBT,轉換器(典型) transfercharacteristicIGBT,Boost(typical) IC=f(VGE) VCE=20V 80 40 40 30 30 20 20 10 10 0 0,50 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 0 3,0 preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 11 5 6 7 8 9 VGE [V] 10 11 12 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 开关损耗IGBT,轉換器（典型) switchinglossesIGBT,Boost(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=6.8Ω,RGoff=6.8Ω,VCE=350V 开关损耗IGBT,轉換器（典型) switchinglossesIGBT,Boost(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=40A,VCE=350V 2,4 5,0 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 2,2 2,0 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 4,5 4,0 1,8 3,5 1,6 3,0 E [mJ] E [mJ] 1,4 1,2 1,0 2,5 2,0 0,8 1,5 0,6 1,0 0,4 0,5 0,2 0,0 0 10 20 30 40 IC [A] 50 60 70 0,0 80 瞬态热阻抗IGBT,轉換器 transientthermalimpedanceIGBT,Boost ZthJH=f(t) 0 10 20 30 40 RG [Ω] 50 60 70 反偏安全工作区IGBT,轉換器（RBSOA） reversebiassafeoperatingareaIGBT,Boost(RBSOA) IC=f(VCE) VGE=±15V,RGoff=6.8Ω,Tvj=150°C 10 120 ZthJH = f (t) IC, Modul IC, Chip 110 100 1 90 70 IC [A] ZthJH [K/W] 80 0,1 60 50 40 0,01 30 20 i: 1 2 3 4 ri[K/W]: 0,084 0,195 0,587 0,585 τi[s]: 0,0005 0,005 0,05 0,2 0,001 0,001 0,01 0,1 t [s] 1 10 0 10 preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 12 0 100 200 300 400 500 VCE [V] 600 700 800 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 正向偏压特性Diode-斩波器（典型) forwardcharacteristicofDiode-Chopper(typical) IF=f(VF) 瞬态热阻抗Diode-斩波器 transientthermalimpedanceDiode-Chopper ZthJH=f(t) 30 10 Tvj = 25°C Tvj = 125°C Tvj = 150°C ZthJH : Diode 25 ZthJH [K/W] IF [A] 20 15 1 10 5 0 i: 1 2 3 4 ri[K/W]: 0,2803 0,8541 1,581 0,9342 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 VF [V] 正向偏压特性Diode,轉換器（典型) forwardcharacteristicofDiode,Boost(typical) IF=f(VF) 0,01 0,1 t [s] 1 10 开关损耗Diode,轉換器（典型) switchinglossesDiode,Boost(typical) Erec=f(IF) RGon=6.8Ω,VCE=350V 50 0,8 Tvj = 25°C Tvj = 125°C Tvj = 150°C 45 Erec, Tvj = 125°C Erec, Tvj = 150°C 0,7 40 0,6 35 0,5 E [mJ] IF [A] 30 25 20 0,4 0,3 15 0,2 10 0,1 5 0 0,0 0,5 1,0 1,5 2,0 0,0 2,5 VF [V] preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 13 0 5 10 15 20 25 30 IF [A] 35 40 45 50 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 开关损耗Diode,轉換器（典型) switchinglossesDiode,Boost(typical) Erec=f(RG) IF=25A,VCE=350V 瞬态热阻抗Diode,轉換器 transientthermalimpedanceDiode,Boost ZthJC=f(t) 0,6 10 Erec, Tvj = 125°C Erec, Tvj = 150°C ZthJC : Diode 0,5 1 ZthJC [K/W] E [mJ] 0,4 0,3 0,2 0,1 0,1 0,0 i: 1 2 3 4 ri[K/W]: 0,3013 0,7006 1,3873 0,9109 τi[s]: 0,0005 0,005 0,05 0,2 0 10 20 30 RG [Ω] 40 50 0,01 0,001 60 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TC [°C] 120 140 160 preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 14 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FD-DF80R12W1H3_B52 初步数据 PreliminaryData 接线图/circuit_diagram_headline 封装尺寸/packageoutlines Infineon preparedby:CM dateofpublication:2014-07-21 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Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:CM dateofpublication:2014-07-21 approvedby:MB revision:2.0 16