[ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20 Semiconductor 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 180V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.250Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA09293. Ordering Information PART NUMBER PACKAGE BRAND RFM12N18 TO-204AA RFM12N18 RFM12N20 TO-204AA RFM12N20 RFP12N18 TO-220AB RFP12N18 RFP12N20 TO-220AB RFP12N20 Symbol D G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-204AA JEDEC TO-220AB DRAIN (FLANGE) DRAIN (TAB) SOURCE DRAIN GATE SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 1461.2 RFM12N18, RFM12N20, RFP12N18, RFP12N20 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1mΩ) (Note 1). . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . Tpkg RFM12N18 180 180 12 30 ±20 100 0.8 -55 to 150 RFM12N20 200 200 12 30 ±20 100 0.8 -55 to 150 RFP12N18 180 180 12 30 ±20 75 0.6 -55 to 150 RFP12N20 200 200 12 30 ±20 75 0.6 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL MIN TYP MAX UNITS RFM12N18, RFP12N18 180 - - V RFM12N20, RFP12N20 200 - - V VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0V Drain to Source On Resistance (Note 2) rDS(ON) ID = 12A, VGS = 10V, (Figures 6, 7) - - 0.250 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 12A, VGS = 10V - - 3.0 V VDD = 100V, ID ≈ 6A, RG = 50Ω, RL = 16.5Ω, VGS = 10V, (Figures 10, 11, 12) - 35 50 ns - 130 200 ns td(OFF) - 120 180 ns tf - 105 160 ns - - 1700 pF - - 600 pF - - 300 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Thermal Resistance Junction to Case RθJC VDS = 25V, VGS = 0V, f = 1MHz, (Figure 9) RFM12N18, RFM12N20 - - 1.25 oC/W RFP12N18, RFP12N20 - - 1.67 oC/W MIN TYP MAX UNITS ISD = 6A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 325 - ns Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS NOTE: 2. Pulsed: pulse width ≤ 300µs maximum, duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 5-2 RFM12N18, RFM12N20, RFP12N18, RFP12N20 1.2 14 1.0 12 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves Unless Otherwise Specified 0.8 0.6 0.4 0.2 0 10 8 6 4 2 0 50 100 0 150 25 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 30 TC = 25oC ID (MAX) CONTINUOUS 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 VDSS (MAX) 180V RFM12N18, RFP12N18 VDSS (MAX) 200V RFM12N20, RFP12N20 0.1 1 PULSE DURATION = 80µs VGS = 10V DUTY CYCLE ≤ 2% 25 CASE TEMPERATURE TC = 25oC V = 20V 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) GS VGS = 6V 15 VGS = 5V 10 VGS = 4V 0 0 1000 VGS = 8V VGS = 7V 20 5 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 7 FIGURE 4. SATURATION CHARACTERISTICS 40 0.6 30 -40oC 25 25oC 20 125oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) VDS = 10V 35 PULSE DURATION = 80µs DUTY CYCLE ≤ 2% ID, DRAIN CURRENT (A) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 75 100 125 TC, CASE TEMPERATURE (oC) 15 10 125oC VGS = 10V PULSE DURATION = 80µs 0.5 DUTY CYCLE ≤ 2% 0.4 125oC 0.3 25oC 0.2 -40oC 0.1 5 -40oC 0 0 1 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 9 10 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 35 RFM12N18, RFM12N20, RFP12N18, RFP12N20 Typical Performance Curves Unless Otherwise Specified (Continued) 1.3 ID = 12A, VGS = 10V 1.2 1.5 NORMALIZED GATE THRESHOLD VOLTAGE 1 0.5 VGS = VDS ID = 250µA 1.1 1 0.9 0.8 0.7 0 -50 0 50 100 150 0.6 -50 200 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 1600 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS C, CAPACITANCE (pF) 1400 1200 CISS 1000 800 600 COSS 400 200 0 0 VDS 150 VDD = BVDSS 8 VDD = BVDSS 6 RL = 16.67Ω IG(REF) = 1mA VGS = 10V 100 0.75BVDSS 0.50BVDSS 0.25BVDSS 50 4 0.75BVDSS 0.50BVDSS 0.25BVDSS 2 DRAIN SOURCE VOLTAGE CRSS 0 20 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE 50 IG(REF) IG(ACT) t, TIME (µs) 80 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2 0 IG(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4