PANASONIC MA3Z070

Band Switching Diodes
MA3Z070
Silicon epitaxial planar type
Unit : mm
2.1 ± 0.1
For a band selection switch of an electronic tuner
0.425
Rating
0.3 − 0
0.65
1.3 ± 0.1
0.65
+ 0.1
0.15 − 0.05
0.2
0 to 0.1
Symbol
3
0.7 ± 0.1
■ Absolute Maximum Ratings Ta = 25°C
1
2
0.9 ± 0.1
• Low forward dynamic resistance rf
• Less voltage dependence of diode capacitance CD
• S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
2.0 ± 0.2
■ Features
Parameter
1.25 ± 0.1
+ 0.1
0.425
Unit
Reverse voltage (DC)
VR
35
V
Forward current (DC)
IF
100
mA
Operating ambient temperature*
Topr
−25 to +85
°C
Storage temperature
Tstg
−55 to +150
°C
Note) * : Maximum ambient temperature during operation
0.2 ± 0.1
1 : Anode 1
2 : Cathode 2
3 : Anode 2
Cathode 1
EIAL : SC-70
S-Mini Type Package (3-pin)
Marking Symbol: M3S
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 33 V
0.01
100
nA
Forward voltage (DC)
VF
IF = 100 mA
0.92
1.0
V
Diode capacitance
CD
VR = 6 V, f = 1 MHz
0.9
1.2
pF
IF = 2 mA, f = 100 MHz
0.65
0.85
Ω
Forward dynamic resistance*
rf
Note) 1．Each characteristic is a standard for individual diodes
2．Rated input/output frequency: 100 MHz
3．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
1
MA3Z070
Band Switching Diodes
IF  V F
103
IR  T a
CD  VR
10
Ta = 25°C
102
f = 1 MHz
Ta = 25°C
VR = 33 V
10
1
Reverse current IR (nA)
Diode capacitance CD (pF)
Forward current IF (mA)
5
102
3
2
1
0.5
0.3
10
1
10−1
0.2
10−1
0
0.2
0.4
0.6
0.8
0.1
1.0
10−2
0
Forward voltage VF (V)
4
8 12 16 20 24 28 32 36 40
rf  IF
rf  f
0.8
0.6
0.4
0.2
0
1
3
10
30
Forward current IF (mA)
2
1.0
f = 100 MHz
Ta = 25°C
Forward dynamic resistance rf (Ω)
Forward dynamic resistance rf (Ω)
1.0
100
IF = 2 mA
Ta = 25°C
0.8
0.6
0.4
0.2
0
10
30
100
300
Frequency f (MHz)
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
Reverse voltage VR (V)
1 000