Variable Capacitance Diodes MA2ZV01 Silicon epitaxial planar type Unit : mm For VCO INDICATES CATHODE 0.4 ± 0.15 Symbol Rating Unit Reverse voltage (DC) VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 0.3 − 0.05 1.7 ± 0.1 2.5 ± 0.2 + 0.1 0.16 − 0.06 Parameter 0.4 ± 0.15 2 0 to 0.05 ■ Absolute Maximum Ratings Ta = 25°C 1 0.9 ± 0.1 • Good linearity and large capacitance-ratio in CD VR relation • Small series resistance rD • S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 1.25 ± 0.1 ■ Features 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 7X ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR Conditions VR = 6 V Diode capacitance CD(1V) VR = 1 V, f = 1 MHz CD(3V) VR = 3 V, f = 1 MHz Capacitance ratio CD(1V)/CD(3V) Series resistance* rD Min Typ Max Unit 10 nA 15.0 17.0 pF 5.0 7.0 pF 2.2 CD = 9 pF, f = 470 MHz 1.0 Ω Note) 1．Rated input/output frequency: 470 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2ZV01 Variable Capacitance Diodes IF V F 100 25°C − 40°C 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 30 20 10 5 3 VR = 1 V f = 1 MHz 3V 1.03 1.02 1.01 1.00 0.99 0.98 0 20 40 60 80 Ambient temperature Ta (°C) 1 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) CD Ta 1.04 CD(Ta) CD(Ta = 25°C) VR = 6 V 10 1 0.1 2 Forward voltage VF (V) 2 f = 1 MHz Ta = 25°C Reverse current IR (nA) Ta = 60°C 80 100 50 Diode capacitance CD (pF) Forward current IF (mA) 100 IR Ta CD VR 120 100 0.01 0 20 40 60 80 100 120 140 160 Ambient temperatureTa (°C)