Variable Capacitance Diodes MA2S376 Silicon epitaxial planar type Unit : mm For VCO of a UHF radio 0.15 min. + 0.05 • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 − 0.02 ■ Features 0.8 ± 0.1 + 0.05 0.27 − 0.02 0.15 min. 1.3 ± 0.1 1.7 ± 0.1 Unit Reverse voltage (DC) VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.05 Rating 0 to 0.1 Symbol 0.7 ± 0.1 Parameter 0.13 − 0.02 ■ Absolute Maximum Ratings Ta = 25°C 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: H ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Series resistance* Symbol IR Conditions Min Max Unit 10 nA CD(1V) VR = 1 V, f = 1 MHz 14.00 16.00 pF CD(3V) VR = 3 V, f = 1 MHz 6.80 8.90 pF 0.3 Ω rD VR = 6 V Typ CD = 9 pF, f = 470 MHz Note) 1．Rated input/output frequency: 470 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2S376 Variable Capacitance Diodes CD VR f = 1 MHz Ta = 25°C Forward current IF (mA) Diode capacitance CD (pF) 50 30 20 10 5 3 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) IR T a Reverse current IR (nA) 100 VR = 6 V 10 1 0.1 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 1.04 Ta = 25°C 100 1.03 80 1.02 f = 1 MHz VR = 1 V 3V 60 40 0 1.01 1.00 20 2 1 CD Ta IF V F 120 CD(Ta) CD(Ta = 25°C) 100 0.99 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1.2 0.98 0 20 40 60 80 Ambient temperature Ta (°C) 100