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The following document contains information on Cypress products.
MB39C601
ASSP
TRIAC Dimmable LED Driver IC for LED Lighting
Data Sheet (Full Production)
Publication Number MB39C601_DS405-00008
CONFIDENTIAL
Revision 2.1
Issue Date January 31, 2014
D a t a S h e e t
2
CONFIDENTIAL
MB39C601_DS405-00008-2v1-E, January 31, 2014
MB39C601
ASSP
TRIAC Dimmable LED Driver IC for LED Lighting
Data Sheet (Full Production)
 DESCRIPTION
MB39C601 is a flyback type switching regulator contorller IC. The LED current is regulated by controlling
the switching on-time or controlling the switching frequency, depending on the LED load.
It is most suitable for the general lighting applications, for example stocks of commercial and residential
light bulbs and so on.
 FEATURES
 High power factor in single conversion
 High efficiency at the light load, at Low Power Mode (LPM) Burst Operation in switching frequency
control
 Frequency setting depend on the FB pin current : 30 kHz to 130 kHz
 Control of the current of Primary Winding without the external sense resistor
 TRIAC Dimmable LED lighting
 Helps to achieve high efficiency and low EMI by detecting transformer zero energy
 Built-in under voltage lock out function
 Built-in over load protection function
 Built-in output over voltage protection function
 Built-in over temperature protection function
 LED load
:25W (Max)
 Input voltage range VDD
: 9V to 20V
 Input voltage range for LED lighting applications
: AC110VRMS, AC230VRMS
 Package
: SOP-8 (3.9mm × 5.05mm × 1.75mm [Max])
 APPLICATIONS
 LED lighting
 TRIAC dimmable LED lighting etc.
Publication Number MB39C601_DS405-00008
Revision 2.1
Issue Date January 31, 2014
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient
production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the
valid combinations offered may occur.
CONFIDENTIAL
D a t a S h e e t
 PIN ASSIGNMENT
(TOP VIEW)
FB
1
8
VDD
TZE
2
7
GND
PCL
3
6
DRN
OTM
4
5
VCG
(FPT-8P-M02)
 PIN DESCRIPTIONS
Pin No.
Pin Name
I/O
1
FB
I
Switching frequency setting pin.
2
TZE
I
Transformer auxiliary winding zero energy detecting pin.
3
PCL
I
Pin for controlling peak current of transformer primary winding.
4
OTM
I
On-time setting pin.
5
VCG
-
External MOSFET gate bias pin.
6
DRN
O
External MOSFET source connection pin.
7
GND
-
Ground pin.
8
VDD
-
Power supply pin.
2
CONFIDENTIAL
Description
MB39C601_DS405-00008-2v1-E, January 31, 2014
VIN
AC
CONFIDENTIAL
CVDD
1
CBULK
1
1
January 31, 2014, MB39C601_DS405-00008-2v1-E
1
OTM
1
TZE
FB
VDD
4
2
1
8
IFB
13V
IOTM
OV
Fault
3V
1V
VGATE
On-Time Modulation
and Fault Response
Control
5V
20mV
Shutdown
and Restart
Latch or
Retry
Zero Energy
Detect
Feedback
Processing
Modulators
1.5μA<IFB<210µA
Low Power Mode
210µA<IFB
Over Load
IFB<1.5µA
IFB
10V/8V
UVLO
10V/6V
Fault Latch
Reset
D
IFB
Thermal
Shutdown
Q
Q
1/tSW
Fault Latch
Reset
UVLO
VVCG
Shunt
VVDD
Switch
2V
14V
Current
Sense
VGATE
Discharge
Freq. Modulator
Enable
PWM
Fault
Enable
PWM
IFB
Fault Timing
and Control
VVCG
LDO
IFB
IFB
MB39C601
IP
Current
Modulator
Driver
HS
Drive
3
7
6
5
PCL
GND
DRN
VCG
1
1
DBIAS
D1
1
CVCG
Rst
1
2
1
2
Co
2
2
Rs
Vs
D a t a S h e e t
 BLOCK DIAGRAM (On-time control application)
3
D a t a S h e e t
 ABSOLUTE MAXIMUM RATINGS
Parameter
Power supply voltage
Input voltage
Input current
Output current
Power dissipation
Storage temperature
Symbol
Condition
Rating
Min
Max
Unit
VVDD
VDD pin
-0.3
+25.0
V
VDRN
DRN pin
-
+20.0
V
VVCG
VCG pin
-0.3
+16.0
V
VTZE
TZE pin
-0.3
+6.0
V
VOTM
OTM pin
-0.3
+6.0
V
VPCL
PCL pin
-0.3
+6.0
V
VFB
FB pin
-0.3
+2.0
V
IVCG
VCG pin
-
10
mA
IOTM
OTM pin
-1
0
mA
IPCL
PCL pin
-1
0
mA
IFB
FB pin
0
1
mA
IDRN
DRN pin
-
800
mA
IDRN
DRN pin,
Pulsed 400ns, 2% duty cycle
-1.5
+6.0
A
-
800*
mW
-55
+125
°C
PD
Ta ≤ +25°C
TSTG
*: The value when using two layers PCB.
Reference: θja (wind speed 0m/s): 125°C/W
WARNING: Semiconductor devices may be permanently damaged by application of stress (including, without
limitation, voltage, current or temperature) in excess of absolute maximum ratings.
Do not exceed any of these ratings.
4
CONFIDENTIAL
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
Value
Min
Typ
Max
Unit
VDD pin input voltage
VDD
VDD pin
9
-
20
V
VCG pin input voltage
VCG
VCG pin (from low-impedance
source)
9
-
13
V
VCG pin input current
IVCG
VCG pin (from high-impedance
source)
10
-
2000
µA
OTM pin
Shutdown/retry mode
10
-
100
kΩ
OTM pin
Latch-off mode
150
-
750
kΩ
24.3
-
200.0
kΩ
OTM pin ground
resistance
ROTM
PCL pin ground
resistance
RPCL
PCL pin
TZE pin connection
resistance
RTZE1
TZE pin
Auxiliary winding connection
resistor
50
-
200
kΩ
VCG pin grounded
capacity
CVCG
VCG pin
33
-
200
nF
VDD pin bypass
capacity
CBP
Ceramic capacitor value to set
between VDD and GND pin
0.1
-
1.0
µF
Operating ambient
temperature
Ta
-40
+25
+85
°C
-
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated under these conditions.
Any use of semiconductor devices will be under their recommended operating condition.
Operation under any conditions other than these conditions may adversely affect reliability of
device and could result in device failure.
No warranty is made with respect to any use, operating conditions or combinations not
represented on this data sheet. If you are considering application under any conditions other than
listed herein, please contact sales representatives beforehand.
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
5
D a t a S h e e t
 ELECTRICAL CHARACTERISTICS
Parameter
VCG voltage
(Operating)
(OPERATING)
VCG
VCG voltage
(Disable)
(DISABLED)
13
14
15
V
5
VVDD=12V, IVCG=26µA,
IFB=350µA
15
16
17
V
ΔVCG
5
VCG(DISABLED)VCG(OPERATING)
1.75
2.00
2.15
V
VCG Shunt input
current
IVCG(SREG)
5
VVCG=VCG(DISABLED)100mV, VVDD=12V
-
12
26
µA
VCG Shunt Load
Regulation
ΔVCG(SREG)
5
26µA<IVCG ≤ 5mA,
IFB=350µA
-
125
200
mV
VCG(LREG)
5
VVDD=20V, IVCG=-2mA
-
13
-
V
-
VDD-VCG,
VVDD=11V, IVCG=-2mA
-
2.0
2.8
V
VCG LDO
regulation
voltage
VCG
VCG
(LREG, DO)
UVLO Turn-on
threshold voltage
VDD(ON)
8
-
9.7
10.2
10.7
V
UVLO Turn-off
threshold voltage
VDD(OFF)
8
-
7.55
8.00
8.50
V
1.9
2.2
2.5
V
-
4*
10*
Ω
5.6
6.0
6.4
V
UVLO hysteresis ΔVDD(UVLO)
VDD switch
on-resistance
Fault Latch Reset
VDD voltage
CONFIDENTIAL
Condition
VVDD=14V, IVCG=2.0mA
VCG LDO
Dropout voltage
6
Pin
No.
5
VCG voltage
difference
VDD and
VCG SUPPLY
Symbol
(Ta = +25°C, VVDD = 12V)
Value
Unit
Min Typ Max
RDS, ON (VDD)
VDD
8
6,8
8
VDD(ON) - VDD(OFF)
VVCG=12V, VVDD=7V,
IDRN=50mA
-
(FAULT RESET)
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
Symbol
Pin
No.
Minimum
switching period
tSW(HF)
6
Maximum
switching period
tSW(LF)
Parameter
DRN peak
current
IDRN(peak)
Typ
Max
FM mode IFB=5µA
7.215
7.760
8.305
µs
6
IFB=IFB, CNR3 -20µA
31.5
35.0
38.5
µs
6
IFB=5µA, IPCL=100μA
-
3*
-
A
6
IFB=5µA, IPCL=30μA
-
1*
-
A
6
RPCL =OPEN
-
0.45*
-
A
ILIM blanking
time
tBLANK (ILIM)
6
IFB=5µA, RPCL=100kΩ,
1.2A pull-up on DRN
-
400*
-
ns
3
IFB=5µA
2.94
3.00
3.06
V
3
IFB=230µA
0.95
1.00
1.05
V
VPCL
IFB range for
FM mode
IFB, CNR1
1
tS=tS(LF), IDRN=IDRN(peak, max)
145
165
195
µA
IFB range for
AM mode
IFB,CNR2IFB,CNR1
1
tS=tS(LF) , IDRN(peak) variation
range= IDRN(peak, max) to
IDRN(peak, min)
35
45
65
µA
IFB range for
LPM
IFB,CNR3IFB,CNR2
1
-
50
70
90
µA
IFB, LPM-HYST
1
-
10
25
40
µA
VFB
1
IFB=10µA
0.34
0.70
0.84
V
RDS(on)(DRN)
6,7
IDRN=4.0A
-
200*
400*
mΩ
Driver off
leakage current
IDRN(OFF)
6,7
VDRN=12V
-
1.5
20.0
µA
High-side driver
on-resistance
RDS(on)(HSDRV)
5,6
High-side
Driver current=50mA
-
6*
11*
Ω
DRN discharge
current
IDIS
6,7
VDD=OPEN, DRN=12V,
Fault latch set
2.38
3.40
4.42
mA
VTZE(TH)
2
5*
20*
50*
mV
TZE clamp
voltage
VTZE(CLAMP)
2
-200
-160
-100
mV
Start timer
operation
threshold voltage
VTZE(START)
2
0.10
0.15
0.20
V
Driver turn-on
Delay time
tDRY(TZE)
6
-
150
-
ns
Wait time for
zero energy
detection
tWAIT(TZE)
6
2.0
2.4
2.8
µs
tST
6
150
240
300
µs
IFB hysteresis for
LPM
FB voltage
Driver
on-resistance
TZE zero energy
threshold voltage
Start timer period
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
Unit
Min
IDRN (peak, absmin)
PCL voltage
TRANSFORMER
ZERO ENERGY
DETECTION
Value
Minimum peak
current for RPCL
open
MODULATION
DRIVER
Condition
ITZE= -10µA
-
150Ω pull-up 12V on DRN
VTZE=0V
7
D a t a S h e e t
Symbol
Pin
No.
Condition
OVP threshold
voltage
VTZE(OVP)
2
OVP blanking
time
tBLANK, OVP
6
Input bias current
ITZE(bias)
2
Over Load
detection current
IFB(OL)
1
Over Load delay
time
tOL
6
IFB=0A
Retry time after
Over Load
tRETRY
6
ROTM=76kΩ
Over Load
detection
boundary
resistance
ROTM(TH)
4
Shutdown
Threshold
voltage
VOTM(Vth)
4
IOTM, PU
Parameter
OVERVOLTAGE
FAULT
OVERLOAD
FAULT
SHUTDOWN
THRESHOLD
Shutdown OTM
current
MAXIMUM ON
TIME
ON-Time
OTM voltage
OTP
tOTM
Unit
Min
Typ
Max
-
4.85
5.00
5.15
V
-
0.6
1.0
1.7
µs
-0.1
0
+0.1
µA
0*
1.5*
3.0*
µA
200
250
300
ms
-
750
-
ms
100
120
150
kΩ
OTM=
0.7
1.0
1.3
V
4
VOTM = VOTM(vth)
-600
-450
-300
µA
6
ROTM=383kΩ
3.74
4.17
4.60
µs
6
ROTM=76kΩ
3.4
3.8
4.2
µs
2.7
3.0
3.3
V
VTZE=5V
-
-
VOTM
4
Protection
temperature
TSD
-
Tj, temperature rising
-
+150*
-
°C
Protection
temperature
hysteresis
TSD_HYS
-
Tj, temperature falling,
degrees below TSD
-
25*
-
°C
8
VVDD=20V, VTZE=1V
1.36
1.80
2.34
mA
8
VVDD=20V
-
3.0*
3.7*
mA
IVDD
Power supply
current
POWER SUPPLY
CURRENT
Value
-
(STATIC)
IVDD
(OPERATING)
Power supply
current for LPM
IVDD(LPM)
8
IFB=350µA
-
550
900
µA
Power supply
current for
UVLO
IVDD(UVLO)
8
VVDD= VDD(ON) - 100mV
-
285
500
µA
*: Standard design value
8
CONFIDENTIAL
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 TYPICAL CHARACTERISTICS
Power supply current vs. Ta
4.0
3.8
3.8
3.6
3.6
3.4
3.4
IDD+ICG [mA]
IDD [mA]
Power supply current vs. VDD
4.0
3.2
3.0
2.8
3.2
3.0
2.8
2.6
2.6
2.4
2.4
VDD; decreasing from 20V
VCG=OPEN
IFB=5µA
2.2
2.0
2.0
8
10
12
14
16
VDD=12V
VCG=12V
IFB=5µA
2.2
18
20
-40 -30 -20 -10
0
+10 +20 +30 +40 +50 +60 +70 +80
-35 -25 -15
-5
+5 +15 +25 +35 +45 +55 +65 +75 +85
Ta [°C]
VDD [V]
Switching frequency vs. IFB
DRN peak current vs. IFB
160
3.5
140
3.0
120
Ta=+25°C
Ta=+85°C
2.5
IDRN(peak) [A]
100
fSW [kHz]
Ta=-25°C
80
60
Ta=-40°C
40
Ta=+25°C
Ta=+85°C
2.0
1.5
1.0
0.5
20
0
0.0
0
50
100
150
200
250
300
0
50
100
150
200
250
300
IFB [uA]
IFB [µA]
DRN peak current vs. IPCL
ON time vs. ROTM
3.5
6
3.0
5
2.5
tOTM [us]
IDRN(peak) [A]
4
2.0
1.5
3
Latch-off
(2)
2
1.0
0.5
Ta=-40°C
Ta=+25°C
Ta=+85°C
1
n=30
0
0.0
0
20
40
60
IPCL [µA]
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
Shutdown/
Retry
(1)
80
100
0
100
200
300
400
500
600
ROTM [kΩ]
9
D a t a S h e e t
Driver ON resistance vs. Ta
High-side Driver ON resistance vs. Ta
12
400
11
350
10
9
RDS(on)(HSDRN) [W]
RDS(on)(DRN) [mΩ]
300
250
200
150
8
7
6
5
4
3
100
2
50
1
0
0
-40 -30 -20 -10 0 +10 +20 +30 +40 +50 +60 +70 +80
-35 -25 -15 -5 +5 +15 +25 +35 +45 +55 +65 +75 +85
-40 -30 -20 -10
0 +10 +20 +30 +40 +50 +60 +70 +80
-35 -25 -15 -5
+5 +15 +25 +35 +45 +55 +65 +75 +85
Ta [°C]
Ta [°C]
Power dissipation vs.Ta
1000
900
Power dissipation [mW]
800
700
600
500
400
300
200
100
0
-50 -40 -30 -20 -10
0 +10 +20 +30 +40 +50 +60 +70 +80 +90 +100
Ta[°C]
10
CONFIDENTIAL
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 FUNCTION EXPLANATION
(1) LED Current Control Function
MB39C601 is a flyback type switching regulator controller. The LED current is regulated by controlling the
switching on-time or controlling the switching frequency depending on the LED load.
The LED current is converted into detecting voltage (Vs) by sense resistor (Rs) connected in series with
LED. Vs is compared by an external error amplifier (Err AMP).When Vs falls below a reference voltage,
Err AMP output rises and the current that flows into the Opto-Coupler is decreased.
The OTM pin current is controlled via the Opto-Coupler in the on-time control block. In on-time control, it
controls on-time at OTM pin current. So, on-time increases when the current of the OTM pin decreases.
And the average current supplied to LED is regulated, because on-time is regulated at the constant
switching frequency.
The FB pin current is controlled via the Opto-Coupler in the switching frequency control block. In
switching frequency control, it controls switching frequency at FB pin current. So, switching frequency
becomes high when the current of the FB pin decreases. And the average current supplied to LED is
regulated, because switching frequency is regulated at the constant on-time.
(2) Cascode Switching
The switch in Primary Winding is a cascode connection.The gate of external MOSFET is connected with
the VCG pin, and the source is connected with the drain of internal Driver MOSFET.
When the swich is on-state, internal Driver MOSFET is turned on, HS Driver MOSFET is turned off, and
the source voltage of external MOSFET goes down to GND. For this period the DC bias is supplied to the
gate of external MOSFET from the VCG pin. Therefore external MOSFET is turned on.
When the switch is off-state, internal Driver MOSFET is turned off, HS Driver MOSFET is turned on, and
the source voltage of external MOSFET goes up to VCG voltage. For this period the DC bias is supplied to
the gate of external MOSFET from VCG pin. Therefore external MOSFET is turned off.
Moreover, the current flowing into internal Driver MOSFET is equal to the current of Primary Winding.
Therefore, the peak current into Primary Winding can be detected without the sense resistor.
(3) Natural PFC (Power Factor Correction) Function
In the AC voltage input, when the input current waveform is brought close to the sine-wave, and the phase
difference is brought close to Zero, Power Factor is improved.
In the flyback method operating in discontinuous conduction mode, when the input capacitance is set small,
the input current almost becomes equal with peak current of Primary Winding.
I PEAK =
VBULK × t ON
LMP
=
VBULK
LMP
tON
VBULK : Supply voltage of Primary Winding
LMP
: Inductance of Primary Winding
tON
: On-time
In on-time control, if loop response of Error Amp. is set to lower than the AC frequency (below 1/10 of the
AC frequency), on-time can be constant. Therefore, input current is proportional to input voltage, so Power
Factor is regulated.
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
11
D a t a S h e e t
(4) Power-Up Sequencing
When the voltage is input to VBULK, the electric charge is charged to capacitance of the VCG pin (CVCG)
through starting resistor (Rst). So, the voltage of the VCG pin rises. The voltage of the DRN pin rises by
source follower when the voltage of the VCG pin reaches the threshold voltage of the external HVMOSFET.
The DRN pin is connected with the VDD pin through the internal VDD Switch, and VDD capacitor
(CVDD) is charged from the DRN pin. When the voltage at the VDD pin reaches the threshold voltage of
UVLO, the VDD Switch is turned off, and the internal Bias circuit operates, and the switching is started.
After the switching begins, the voltage at the VDD pin is supplied from Auxiliary Winding through the
external diode (DBIAS). The voltage of an Auxiliary Winding is decided by rolling number ratio of
Auxiliary Winding and Secondary Winding, and the voltage of Secondary Winding. Therefore, the voltage
at the VDD pin is not supplied, until the voltage of Auxiliary Winding rises more than the voltage at the
VDD pin. In this period, it is necessary to set the capacitor of the VDD pin to prevent the voltage of the
VDD pin from falling below the threshold voltage of UVLO.
The external Schottky diode (D1) is required between the DRN pin and VDD pin. This diode is used to
prevent the current that flows through the body diode of the VDD Switch.
 Current Passing When Starting
VBULK
Rst
Primary
Winding
Ist
HV-MOSFET
CVCG
D1
VDD Start-up Current
CVDD
DBIAS
VDD Operating and LPM Current
VDD
Auxiliary
Winding
VCG
8
5
VDD
Switch
HS
Drive
VCG
Shunt
UVLO
10V/8V
Enable
PWM
14V
DRN
6
2V
Fault
Driver
PWM
Control
12
CONFIDENTIAL
7
GND
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 Power-Up Sequencing
UVLO threshold
UVLO threshold
(5) Power Down Sequencing
When AC power is removed from the AC line, the current does not flow to Secondary Winding even if HV
MOSFET is switching. The LED current is supplied from the output capacitance and decreases gradually.
Similarly, the voltage at the VDD pin decreases because the current does not flow into Auxiliary Winding.
The switching stops and MB39C601 becomes shutdown when the voltage at the VDD pin falls below the
threshold voltage of UVLO.
 Power Down Sequencing
UVLO threshold 8V
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
13
D a t a S h e e t
(6) OTM Part
It is set on-time by connecting resistor (ROTM) with the OTM pin. As shown in following figure, the on-time
can be controlled by connecting the collector of the Opto-Coupler through resistor from OTM.
 OTM pin Control
The following figure shows how the on-time is programmed over the range of between 1.5μs and 5.0μs for
either range of programming resistors. The resistor range determines the controller response to a sustained
overload fault (to either latch-off or to shutdown/retry). See the item of the overload protection about details
of "latch-off" and "shutdown/retry". On-time is related to the programmed resistor based on the following
equations.
(2) ROTM = tOTM
Ω
[ s ])
Ω
× (0.918 × 10 [
s ])
(1) ROTM = tOTM × (2 × 1010
11
 On-time Setting Range
Moreover, it can be shutted down by making the voltage of the OTM pin below "VOTM (Vth) (typ 1V)".
14
CONFIDENTIAL
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
(7) PCL Part
It is set the peak current of Primary Winding by connecting resistor with the PCL pin.
The maximum peak current of Primary Side is set by connecting resistor (RPCL) between the PCL pin and
GND.
IDRN(pk) = (
100kV
)
RPCL
An about 400ns blanking time of the beginning of switching cycle is masking the spike noise. As a result, it
prevents the sense of current from malfunctioning (See the figure below.).
 Peak Current Control with PCL pin
DRN
6
IDRN
From
High-Voltage
MOSFET Source
Driver
VGATE
Current
Sense
t BLANKCL
GND
7
From
Optocoupler
Emitter
I FB
FB
IFB
1
Current Modulator
I DRNPK
3
1
IFB, µA
I PCL
165 210
VPCL, V
3
1
IFB, µA
165 210
PCL
3
RPCL
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
15
D a t a S h e e t
(8) FB Part
The switching frequency is controlled by setting the current of the FB pin. In on-time control, the switching
frequency is set by pulling up the FB pin to VDD. Moreover, as shown in following figure, it is possible to
control the switching frequency by connecting the emitter of the Opto-Coupler from the FB pin through
resistor. Resistor (RFB) is connected to bleed off the dark current of Opto-Coupler.
 FB pin Control
IFB
RFB
Filter
IFB
FB
1
CFB
Filter
RFB
Feedback
Processing
Modulators
1.5µA<IFB<210µA
Low Power Mode
210µA<IFB
Over Load
IFB<1.5µA
MB39C601 becomes the following three modes by FB current (IFB).
1. Frequency Modulation Mode (FM)
The peak current of HV-MOSFET is set to the maximum, and the LED current is regulated by
adjusting the switching frequency with IFB.The range of the switching frequency is from 30 kHz to
130 kHz. Maximum peak current IDRN (peak, max) of HV-MOSFET is set by the resistance of the PCL
pin.
2. Amplitude Modulation Mode (AM)
The LED current is regulated by adjusting the peak current of HV-MOSFET with IFB.The switching
frequency is about 30 kHz. And the range of HV-MOSFET of the peak current is from 33% to 100%
of the maximum. Maximum peak current IDRN (peak, max) of HV-MOSFET is set by the resistance of the
PCL pin.
3. Low Power Mode (LPM)
MB39C601 becomes two states of LPM-ON and LPM-OFF at a light load. In the LPM-ON mode, it
is operated at 30 kHz switching frequency. And the current is supplied to LED. At this time, the
feedback current from the Opto-Coupler increases, and it changes to the LPM-OFF mode. In the
LPM-OFF mode, it is not operated. And the current is supplied to LED from Co. When the feedback
current from the Opto-Coupler decreases, it changes to the LPM-ON mode. LED is lit by the power
saving repeating these two states.
Three modes of the FM, AM, and LPM change depending on the load of LED. At the light load, three
modes change from FM to AM to LPM.
16
CONFIDENTIAL
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 Switching Frequency and Peak Current Control Operation Based On FB pin
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
17
D a t a S h e e t
(9) TZE Part
MB39C601 requires all of the following three conditions in order to start the next switching cycle.
1.
2.
3.
The time since the last turn-on edge must be equal to or longer than the switching time set by IFB.
The time since the last turn-on edge must be longer than the minimum switching period set by
MB39C601 (nominally 7.5µs which equals 133 kHz).
Immediately after zero energy detection at the TZE pin. Or, the time since the last zero energy
detection must be longer than tWAIT, (TZE) (2.4μs or less).
 Starting switching cycle diagram
Switching Freq. Timer ends
L-Edge of TZE ≤ 20mV
No L-Edge of TZE ≤ 150mV,
TZE ≤ 20mV
VDD≥10.2V
MB39C601 Enable
Switching Freq. Timer ends
L-Edge of TZE ≤ 20mV
TZE
≤150mV
TZE
>150mV
Startup CLK
Tst = 240µs
Forcing Switching
Beginning Turn-on
of Next Period
Switching Freq. Timer ends
L-Edge of TZE ≤ 20mV
There are one or more L-Edge of TZE ≤ 20mV,
but L-Edge of TZE ≤ 20mV is not generated during
period of 2.4µs, after Switching Freq. Timer ends.
Beginning Turn-on of
No startup
Switching
TZE>150mV
There are one or more L-Edge Next Period after 2.4µs
of TZE ≤ 20mV, but L-Edge of since the last TZE L-Edge
TZE ≤ 20mV is not generated
during period of 2.4µs, after
There are one or more L-Edge of TZE ≤ 20mV, but
Switching Freq. Timer ends.
L-Edge of TZE ≤ 20mV is not generated during
period of 2.4µs, after Switching Freq. Timer ends.
The TZE pin is connected with Auxiliary Winding of the transformer through the resistance division, and
detects zero energy as shown " TZE pin Connection".
A delay, 50ns to 200ns, can be added with CTZE to adjust the turn-on of the primary switch with the resonant
bottom of Primarty Winding waveform.
 Switching Waveform at detecting zero Energy
18
CONFIDENTIAL
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 TZE pin Connection
NP
NS
NB
1
RTZE1
Zero Energy
Detect
TZE
2
RTZE2
CTZE
20mV
OV
Fault
Fault Timing
and Control
5V
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
19
D a t a S h e e t
 VARIOUS PROTECTION CIRCUITS
 Under voltage lockout protection (UVLO)
The under voltage lockout protection (UVLO) protects IC from malfunction and protects the system from
destruction/deterioration during the transient state and momentary drop due to start up for the power supply
pin voltage (VDD). The voltage decrease of the VDD pin is detected with comparator, and output HS
DRIVER is turned off and output DRIVER is turned off, and the switching is stopped.The system returns if
the VDD pin becomes more than the threshold voltage of the UVLO circuit.
 Over voltage Proteciton (OVP)
When LED is in the state of open and the output voltage rises too much, the voltage of Auxiliary Winding
and the voltage of the TZE pin rise. The over voltage is detected by sampling this voltage of the TZE pin.
When TZE pin voltage rises more than the threshold voltage of OVP, the over voltage is detected. Output
HS DRIVER is turned off, and output DRIVER is turned off, and the switching is stopped. (latch-off)
If the VDD pin becomes below the voltage of Fault Latch Reset, OVP is released.
 Over load protection (OL)
When the cathode or the anode of LED is short to GND and it becomes an overloaded status at switching
frequency control, the current does not flow into Rs and there is no current feedback to IFB. The current of
the FB pin detects the overload with 1.5µA or less. OL state is decided to latch-off or shutdown/retry by
ROTM.
Shutdown/retry
…
MB39C601 becomes two states of switching on for 250ms and switching off
for 750ms. These states are repeated. If it is not OL status, it returns.
Latch-off
…
The switching is continued for 250ms. If it does not return from OL states for
this period, output HS DRIVER is turned off, and output DRIVER is turned
off, and the switching is stopped. If it returns from OL states after this time
and the switching is still stopped (latch-off) and the VDD pin becomes below
the voltage of Fault Latch Reset, Latch is released.
 Over Load Protection Sequencing
20
CONFIDENTIAL
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 Over temperature protection (OTP)
The over temperature protection (OTP) is a function to protect IC from the thermal destruction.When the
junction temperature reaches +150°C,output HS DRIVER is turn off, and output DRIVER is turned off, and
the switching is stopped.It returns again when the junction temperature falls to +125°C (automatic
recovery).
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
21
D a t a S h e e t
 VARIOUS FUNCTION TABLES
DRN
Function
Detection
Condition at
Discharge
LS_DRV HS_DRV VDD SW
Protected
SW
Operation
Normal Operation
Under Voltage Lockout
Protection (UVLO)
OTM
Shutdown
Over Voltage Protection
(OVP)
Shutdown/
Retry
Over Load
Mode
Protection
(OL)
Latch-Off
Mode
Stopped state of Low
Power Mode
Over Temperature
Protection (OTP)
22
CONFIDENTIAL
Return
Remarks
Condition
OFF
OFF
-
-
-
OFF
OFF
ON
OFF
VDD < 8.0V
VDD > 10.2V
Standby
OFF
OFF
ON
OFF
OTM = GND
OTM > 1V
Standby
OFF
OFF
ON
ON
TZE > 5V
VDD < 6V
→
VDD > 10.2V
Latch-off
IFB < 1.5µA
32.6k < ROTM <
100kΩ
IFB > 1.5µA
Shutdown
Retry OL
Timer
(250ms)
Shutdown
Retry Fault
(750ms)
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
ON
ON
IFB < 1.5µA
150k < ROTM <
459kΩ
VDD < 6V
→
VDD > 10.2V
Latch-off
OFF
OFF
ON
OFF
IFB > 280µA
IFB < 255µA
-
OFF
OFF
ON
OFF
Tj > +150°C
Tj < +125°C
-
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 I/O PIN EQUIVALENT CIRCUIT DIAGRAM
Pin
No.
Pin
Name
1
FB
2
TZE
3
PCL
4
OTM
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
Equivalent Circuit Diagram
23
D a t a S h e e t
Pin
No.
Pin
Name
5
VCG
6
DRN
24
CONFIDENTIAL
Equivalent Circuit Diagram
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 EXAMPLE APPLICATION CIRCUIT
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
25
D a t a S h e e t
・Part list
 Vac 90V to 145V 50Hz/60Hz (Typ110V) Iout 390mA
No. Component
Description
Part No.
Vendor
MB39C601
Spansion
PS2561L-1-A
CEL
1
U1
IC PWM CTRLR CASCODE 8-SOIC
2
U2
OPTO ISOLATOR TRANSISTOR OUTPUT
3
U3, U4, U5
IC OPAMP GP R-R 1MHZ SGL SOT23-5
LMV321IDBVR
TI
4
VR1
SUR ABSORBER 7MM 430V 1250A ZNR
ERZ-V07D431
Panasonic
5
BR1
MB6S
Fairchild
6
T1*
750811148
Wurth
7
F1
IC RECT BRIDGE 0.5A 600V 4SOIC
TRANSFORMER FLYBACK EE20/10/6
430µH RATIO Np/Ns=2.91/1 Np/Na=5.33/1
FUSE PICO FAST 2.5A 250V AXIAL
026302.5WRT1L
Littelfuse
8
L1
IND COMMON MODE CHOKE 40MH
750311650
Wurth
9
L2
JUMPER (RES 0.0Ω 1206)
RK73Z2B
KOA
10
Q1
MOSFET N-CH 650V 7.3A TO-220FP
SPA07N60C3
Infineon
11
Q2
TRANSISTOR NPN 100V 1A SOT-89
FCX493TA
12
Q6
TRANSISTOR NPN GP 40V SOT23
13
C1*
CAP .47UF/400VDC METAL POLY
ECQ-E4474KF
Diodes
Micro
Commercial
Panasonic
14
C2
CAP CER 15000PF 250V X7R 1206
GRM31BR72E153KW01L
muRata
15
C3
CAP CER 10000PF 50V X7R 0603
GRM188R71H103KA01D
muRata
16
C4
CAP CER .1UF 25V X7R 10% 0603
GRM188R71E104KA01D
muRata
17
C5
CAP 100UF 25V ELECT RADIAL 2.5MM
EEU-FC1E101S
Panasonic
18
C6,C7
GRM32ER72A225KA35
muRata
19
C8
CAP 560UF 50V ELECT HE RADIAL
UPW1H561MHD
Nichicon
20
CAP .056UF/630VDC METAL POLY
ECQ-E10223KF
Panasonic
CAP CER 10000PF 50V X7R 0603
GRM188R71H103KA01D
muRata
22
C9
C10, C15, C17,
C18, C19
C11
CAP CER 2.2NF X1/Y1 RADIAL
DE1E3KX222MA4BL01
muRata
23
C12
CAP CER 220PF 630VDC U2J 1206
GRM31A7U2J221JW31D
muRata
24
C13
CAP CER 0.33UF 16V X7R 0603
GRM188R71C334KA01
muRata
25
C14
CAP CER 1UF 16V X7R 0805
GRM21BR71C105KA01#
muRata
26
C16
GRM21BR71E104KA01#
muRata
27
C21
B32921C3223M
Epcos
28
D1
CAP CER .1UF 25V 0805
CAP .022UF/305VAC X2 METAL
POLYPRO
DIODE ULTRA FAST 800V 1A SMA
RS1K-13-F
Diodes
29
D3
DIODE ULTRA FAST 200V SOT-23
MMBD1404
Fairchild
30
D4
DIODE ZENER 18V 225MW SOT-23
BZX84C18LT1
On Semi
31
D5
DIODE GPP FAST 1A 600V DO-41
UF4005
Fairchild
32
D6
DIODE GPP FAST 1A 600V SMA
33
D8
SHUNT REGULATOR 5.0V SOT-23
34
D9
35
R1, R2, R31
36
R3, R6, R15
37
R4
38
R5
39
R7
40
R8
RES 4.42kΩ 1/10W 1% 0603 SMD
41
R9
RES 39.2Ω 1/8W 5% 0805 SMD
42
R10
RES 1.0kΩ METAL FILM 2W 5%
43
R11
RES 110kΩ 1/8W 5% 0805 SMD
21
26
CONFIDENTIAL
CAP CER 2.2UF 100V X7R 1210
MMBT3904-TP
RS1J
Fairchild
LM4040C50IDBZT
TI
DIODE, SWITCHING 70V SC-70
BAW56WT1
On Semi
RES 560kΩ 1/4W 1% 0805 SMD
RK73H2ATTD5603F
KOA
RES 100kΩ 1/10W 1% 0603 SMD
ERJ-3EKF1003V
Panasonic
RES 75.0kΩ 1/4W 5% 1206 SMD
RK73B2BTTD753J
KOA
RES 510Ω METAL FILM 2W 5%
ERG-2SJ511A
Panasonic
RES 464kΩ 1/10W 1% 0603 SMD
ERJ-3EKF4643V
Panasonic
ERJ-3EKF4421V
Panasonic
RK73B2ATTD390J
KOA
ERG-2SJ102A
Panasonic
RK73B2ATTD114J
KOA
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
No. Component
Description
Part No.
Vendor
44
R12
RES 33.2kΩ 1/10W 1% 0603 SMD
ERJ-3EKF3322V
Panasonic
45
R13
RES 40.2kΩ 1/10W 1% 0603 SMD
ERJ-3EKF4022V
Panasonic
46
R14
RES 634kΩ1/10W 1% 0603 SMD
ERJ-3EKF6343V
Panasonic
47
R16
RES 5.1Ω 1/10W 1% 0603 SMD
RK73H1JTTD5R10F
KOA
48
R17
RES 3.00Ω 1/8W 1% 0805 SMD
RK73H2ATTD3R00F
KOA
49
R18
RES 10.0kΩ 1/10W 1% 0603 SMD
ERJ-3EKF1002V
Panasonic
50
R19
RES .33Ω 1/4W 1% 1206 SMD
ERJ-8RQFR33V
Panasonic
51
R20
RES 301kΩ 1/10W 1% 0603 SMD
ERJ-3EKF3013V
Panasonic
52
R21
RES 71.5kΩ 1/10W 1% 0603 SMD
ERJ-3EKF7152V
Panasonic
53
R22
RES 200kΩ 1/10W 1% 0603 SMD
ERJ-3EKF2003V
Panasonic
54
R24, R35
RES 3.01kΩ 1/10W 1% 0603 SMD
ERJ-3EKF3011V
Panasonic
55
R25, R33
RES 1.00MΩ 1/10W 1% 0603 SMD
ERJ-3EKF1004V
Panasonic
56
R26
RES 2.00kΩ 1/10W 1% 0603 SMD
ERJ-3EKF2001V
Panasonic
57
R27
RES 511kΩ 1/10W 1% 0603 SMD
ERJ-3EKF5113V
Panasonic
58
R23, R28
RES 20.0kΩ 1/10W 1% 0603 SMD
ERJ-3EKF2002V
Panasonic
59
R29
RES 12.7kΩ 1/8W 1% 0805 SMD
RK73H2ATTD1272F
KOA
60
R30
RES 604kΩ 1/10W 1% 0603 SMD
ERJ-3EKF6043V
Panasonic
61
R32
RES 17.4kΩ 1/10W 1% 0603 SMD
ERJ-3EKF1742V
Panasonic
62
R40
RES 16.5kΩ 1/10W 1% 0603 SMD
ERJ-3EKF1652V
Panasonic
63
R41
64
R42
65
R43
RES 0.0Ω 1/20W 5% 0603 SMD
RK73Z1J
KOA
66
R44
RES 1.0kΩ 1/10W 1% 0603 SMD
ERJ-3EKF1001V
Panasonic
*: Vac 180V to 265V 50Hz/60Hz (Typ 230V) Iout 390mA
Spansion : Spansion Inc.
Wurth
: Adolf Wurth GmbH & Co. KG
Infineon : Infineon Technologies AG
CEL
: California Eastern Laboratories, Inc
Fairchild : Fairchild Semiconductor International, lnc.
Diodes : Diodes, Inc
On Semi : ON Semiconductor
Panasonic : Panasonic Corporation
muRata : Murata Manufacturing Co., Ltd.
Epcos
: EPCOS AG
KOA
: KOA Corporation
TI
: Texas Instruments Incorporated
Micro Commercial : Micro Commercial Components Corp.
Nichicon : NICHICON CORPORATION
Littelfuse : Littelfuse, Inc.
No.
Component
Description
6
C1
CAP .22UF/400VDC METAL POLY
13
T1
TRANSFORMER FLYBACK EE20/10/6
1.2mH RATIO Np/Ns=4.42/1 Np/Na=8.15/1
Part No.
Vendor
ECQ-E4224KF
Panasonic
750811145
Wurth
Panasonic : Panasonic Corporation
Wurth
: Adolf Wurth GmbH & Co. KG
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
27
D a t a S h e e t
 USAGE PRECAUTION
1. Do not configure the IC over the maximum ratings.
If the IC is used over the maximum ratings, the LSI may be permanently damaged.
It is preferable for the device to normally operate within the recommended usage conditions. Usage outside
of these conditions can have an adverse effect on the reliability of the LSI.
2. Use the device within the recommended operating conditions.
The recommended values guarantee the normal LSI operation under the recommended operating conditions.
The electrical ratings are guaranteed when the device is used within the recommended operating conditions
and under the conditions stated for each item.
3. Printed circuit board ground lines should be set up with consideration for common
impedance.
4. Take appropriate measures against static electricity.
 Containers for semiconductor materials should have anti-static protection or be made of conductive
material.
 After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.
 Work platforms, tools, and instruments should be properly grounded.
 Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ in serial between body and
ground.
5. Do not apply negative voltages.
The use of negative voltages below - 0.3 V may make the parasitic transistor activated to the LSI, and can
cause malfunctions.
28
CONFIDENTIAL
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 ORDERING INFORMATION
Part number
Package
MB39C601PNF
8-pin plastic SOP
(FPT-8P-M02)
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
Remarks
29
D a t a S h e e t
 RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION
The LSI products of Spansion with “E1” are compliant with RoHS Directive, and has observed the standard
of lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB), and polybrominated
diphenyl ethers (PBDE). A product whose part number has trailing characters “E1” is RoHS compliant.
 MARKING FORMAT (Lead Free version)
C601
E1 XXXX
XXX
INDEX
30
CONFIDENTIAL
Lead-free version
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
 LABELING SAMPLE (Lead free version)
Lead-free mark
JEITA logo
JEDEC logo
The part number of a lead-free product has
the trailing characters "E1".
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
"ASSEMBLED IN CHINA" is printed on the label
of a product assembled in China.
31
D a t a S h e e t
 MB39C601PNF RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY
LEVEL
[Spansion Recommended Mounting Conditions]
Recommended Reflow Condition
Item
Condition
Mounting Method
IR (infrared reflow), warm air reflow
Mounting times
2 times
Storage period
Storage conditions
Before opening
Please use it within two years after
manufacture.
From opening to the 2nd reflow
Less than 8 days
When the storage period after
opening was exceeded
Please process within 8 days
after baking (125°C ±3°C, 24H+ 2H/─0H) .
Baking can be performed up to two times.
5°C to 30°C, 70% RH or less (the lowest possible humidity)
[Mounting Conditions]
(1) Reflow Profile
260°C
255°C
Main heating
170 °C
to
190 °C
(b)
RT
(a)
"H" rank : 260°C Max
(a) Temperature Increase gradient
(b) Preliminary heating
(c) Temperature Increase gradient
(d) Peak temperature
(d') Main Heating
(e) Cooling
(c)
(d)
(e)
(d')
: Average 1°C/s to 4°C /s
: Temperature 170°C to 190°C, 60 s to 180 s
: Average 1°C /s to 4°C /s
: Temperature 260°C Max; 255°C or more, 10 s or less
: Temperature 230°C or more, 40 s or less
or
Temperature 225°C or more, 60 s or less
or
Temperature 220°C or more, 80 s or less
: Natural cooling or forced cooling
Note: Temperature : the top of the package bod
(2) JEDEC Condition: Moisture Sensitivity Level 3 (IPC/JEDEC J-STD-020D)
32
CONFIDENTIAL
MB39C601_DS405-00008-2v1-E, January 31, 2014
D a t a S h e e t
(3) Recommended manual soldering (partial heating method)
Item
Condition
Before opening
Within two years after manufacture
Between opening and mounting
Within two years after manufacture
(No need to control moisture during the storage
period because of the partial heating method.)
Storage period
Storage conditions
5°C to 30°C, 70% RH or less (the lowest possible humidity)
Mounting conditions
Temperature at the tip of a soldering iron: 400°C Max
Time: Five seconds or below per pin*
*: Make sure that the tip of a soldering iron does not come in contact with the package body.
(4) Recommended dip soldering
Item
Condition
Mounting times
1 time
Storage period
Before opening
Please use it within two years after
manufacture.
From opening and mounting
Less than 14 days
When the storage period after
opening was exceeded
Please process within 14 days
after baking (125°C ±3°C, 24H+ 2H/─0H) .
Baking can be performed up to two times.
Storage conditions
5°C to 30°C, 70% RH or less (the lowest possible humidity)
Mounting condition
Temperature at soldering tub: 260°C Max
Time: Five seconds or below
January 31, 2014, MB39C601_DS405-00008-2v1-E
CONFIDENTIAL
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 PACKAGE DIMENSIONS
8-pin plastic SOP
Lead pitch
1.27 mm
Package width×
package length
3.9 mm × 5.05 mm
Lead shape
Gullwing
Sealing method
Plastic mold
Mounting height
1.75 mm MAX
Weight
0.06 g
(FPT-8P-M02)
8-pin plastic SOP
(FPT-8P-M02)
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
+0.03
+0.25
+.010
*1 5.05 –0.20 .199 –.008
8
0.22 –0.07
+.001
.009 –.003
5
*23.90±0.30 6.00±0.20
(.154±.012) (.236±.008)
Details of "A" part
45°
1.55±0.20
(Mounting height)
(.061±.008)
0.25(.010)
0.40(.016)
1
"A"
4
1.27(.050)
0.44±0.08
(.017±.003)
0.13(.005) M
0~8°
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.15±0.10
(.006±.004)
(Stand off)
0.10(.004)
C
2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
Please check the latest package dimension at the following URL.
http://edevice.fujitsu.com/package/en-search/
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 MAJOR CHANGES
Page
Revision 0.1 [August, 2012]
Revision 1.0 [December, 2012]
Revision 2.0 [July, 2013]
Revision 2.1 [January 31, 2014]
-
January 31, 2014, MB39C601_DS405-00008-2v1-E
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Change Results
-
Initial release
-
Company name and layout design change
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Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use,
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless
extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury,
severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use
where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not
be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the
products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss
from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire
protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in
this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and
Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the
prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a
Spansion product under development by Spansion. Spansion reserves the right to change or discontinue work on any
product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to
its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party
rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any damages of any kind
arising out of the use of the information in this document.
Copyright © 2012-2014 Spansion Inc. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit®
EclipseTM, ORNANDTM and combinations thereof, are trademarks and registered trademarks of Spansion LLC in the
United States and other countries. Other names used are for informational purposes only and may be trademarks of their
respective owners.
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MB39C601_DS405-00008-2v1-E, January 31, 2014
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