Datasheet Download

0.9V Drive Nch MOSFET
RYM002N05
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
VMT3
SOT-723
Features
1) High speed switing.
2) Small package(VMT3).
3) Ultra low voltage drive(0.9V drive).
Abbreviated symbol : QJ
 Application
Switching
 Packaging specifications
 Inner circuit
Package
Type
Code
Basic ordering unit (pieces)
RYM002N05
Taping
T2CL
8000

(3)
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
50
V
Gate-source voltage
VGSS
8
V
Drain current
Source current
(Body Diode)
Continuous
ID
200
mA
Pulsed
Continuous
IDP
IS
*1
800
125
mA
mA
Pulsed
ISP
*1
800
mA
PD
*2
150
mW
Tch
Tstg
150
55 to +150
C
C
Symbol
Limits
Unit
833
C / W
Power dissipation
Channel temperature
Range of storage temperature
(1) Gate
(2) Source
(3) Drain
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
* Each terminal mounted on a recommended land.
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.12 - Rev.B
RYM002N05
Data Sheet
 Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
Min.
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=8V, VDS=0V
50
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=50V, VGS=0V
VGS (th)
0.3
-
0.8
V
VDS=10V, ID=1mA
-
1.6
2.2
-
1.7
2.4
-
2.0
2.8
-
2.2
3.3
ID=100mA, VGS=1.2V
-
3.0
9.0
ID=10mA, VGS=0.9V
l Yfs l*
0.2
-
-
Input capacitance
Ciss
-
26
-
pF
VDS=10V
Output capacitance
Coss
-
6
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
3
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
5
-
ns
ID=100mA, VDD 25V
tr *
-
8
-
ns
VGS=4.5V
td(off) *
tf *
-
17
43
-
ns
ns
RL=250
RG=10
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
RDS (on)
Rise time
Turn-off delay time
Fall time
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V

S
ID=200mA, VGS=1.5V
ID=200mA, VDS=10V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
V
Conditions
Is=200mA, VGS=0V
*Pulsed
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
2/5
2014.12 - Rev.B
Data Sheet
RYM002N05
 Electrical characteristics curves (Ta = 25C)
0.2
1
0.1
DRAIN CURRENT : ID[A]
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.9V
Ta=25°C
Pulsed
VGS= 0.8V
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.9V
0.1
VGS= 0.8V
0.4
0.6
0.8
1
0
2
4
6
8
0
10
0.2
0.4
0.6
0.8
1
GATE-SOURCE VOLTAGE : VGS[V]
Fig.1 Typical Output Characteristics( Ⅰ)
Fig.2 Typical Output Characteristics( Ⅱ)
Fig.3 Typical Transfer Characteristics
Ta= 25°C
Pulsed
1000
VGS= 0.9V
VGS= 1.2V
VGS= 1.5V
VGS= 2.5V
VGS= 4.5V
100
0.001
0.01
0.1
1
10000
VGS= 4.5V
Pulsed
1000
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= 25°C
100
0.001
DRAIN-CURRENT : ID[A]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= 25°C
100
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
0.1
VGS= 2.5V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= 25°C
1000
100
1
0.001
10000
VGS= 1.2V
Pulsed
1000
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= 25°C
100
0.001
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)
3/5
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 1.5V
Pulsed
0.001
0.01
10000
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN-SOURCE VOLTAGE : VDS[V]
10000
10000
0.01
DRAIN-SOURCE VOLTAGE : VDS[V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
0.2
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= 25°C
0.1
0.001
0
0
VDS= 10V
Pulsed
VGS= 0.7V
VGS= 0.7V
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
Ta=25°C
Pulsed
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN CURRENT : ID[A]
VGS= 4.5V
DRAIN CURRENT : ID[A]
0.2
10000
VGS= 0.9V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= 25°C
1000
100
0.001
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅵ)
2014.12 - Rev.B
Data Sheet
1
Ta=25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
VGS=0V
Pulsed
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= 25°C
0.01
0.01
0.1
1
0.5
1
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS [V]
tf
100
Ta=25°C
VDD=25V
VGS=4.5V
RG=10Ω
Pulsed
10
td(on)
tr
1
0.1
1
DRAIN-CURRENT : ID[A]
Fig.13 Switching Characteristics
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
5000
Ta=25°C
Pulsed
4000
ID= 0.01A
3000
ID= 0.20A
2000
1000
0
1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
td(off)
0.01
0
DRAIN-CURRENT : ID[A]
1000
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1
VDS= 10V
Pulsed
0
2
4
6
8
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
Ta=25°C
f=1MHz
VGS=0V
4
3
2
Ta=25°C
VDD=25V
ID= 0.2A
RG=10Ω
Pulsed
1
0
0
0.5
1
1.5
CAPACITANCE : C [pF]
10
SOURCE CURRENT : Is [A]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
RYM002N05
100
Ciss
10
Crss
Coss
1
0.01
0.1
1
10
100
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
4/5
2014.12 - Rev.B
RYM002N05
Data Sheet
 Measurement circuits
Pulse width
VGS
ID
VDS
RL
50%
10%
D.U.T.
RG
90%
50%
10%
VGS
VDS
VDD
90%
td(on)
tr
ton
Fig.1-1 Switching time measurement circuit
10%
90%
td(off)
tf
toff
Fig.1-2 Switching waveforms
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.12 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
R1102A
Similar pages