0.9V Drive Nch MOSFET RYM002N05 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) VMT3 SOT-723 Features 1) High speed switing. 2) Small package(VMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ Application Switching Packaging specifications Inner circuit Package Type Code Basic ordering unit (pieces) RYM002N05 Taping T2CL 8000 (3) Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 50 V Gate-source voltage VGSS 8 V Drain current Source current (Body Diode) Continuous ID 200 mA Pulsed Continuous IDP IS *1 800 125 mA mA Pulsed ISP *1 800 mA PD *2 150 mW Tch Tstg 150 55 to +150 C C Symbol Limits Unit 833 C / W Power dissipation Channel temperature Range of storage temperature (1) Gate (2) Source (3) Drain (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Channel to Ambient Rth (ch-a)* * Each terminal mounted on a recommended land. www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. 1/5 2014.12 - Rev.B RYM002N05 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Min. Typ. Max. Unit Conditions - - 10 A VGS=8V, VDS=0V 50 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=50V, VGS=0V VGS (th) 0.3 - 0.8 V VDS=10V, ID=1mA - 1.6 2.2 - 1.7 2.4 - 2.0 2.8 - 2.2 3.3 ID=100mA, VGS=1.2V - 3.0 9.0 ID=10mA, VGS=0.9V l Yfs l* 0.2 - - Input capacitance Ciss - 26 - pF VDS=10V Output capacitance Coss - 6 - pF VGS=0V Reverse transfer capacitance Crss - 3 - pF f=1MHz Turn-on delay time td(on) * - 5 - ns ID=100mA, VDD 25V tr * - 8 - ns VGS=4.5V td(off) * tf * - 17 43 - ns ns RL=250 RG=10 Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance RDS (on) Rise time Turn-off delay time Fall time ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V S ID=200mA, VGS=1.5V ID=200mA, VDS=10V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit V Conditions Is=200mA, VGS=0V *Pulsed www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. 2/5 2014.12 - Rev.B Data Sheet RYM002N05 Electrical characteristics curves (Ta = 25C) 0.2 1 0.1 DRAIN CURRENT : ID[A] VGS= 2.5V VGS= 1.5V VGS= 1.2V VGS= 0.9V Ta=25°C Pulsed VGS= 0.8V VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V VGS= 0.9V 0.1 VGS= 0.8V 0.4 0.6 0.8 1 0 2 4 6 8 0 10 0.2 0.4 0.6 0.8 1 GATE-SOURCE VOLTAGE : VGS[V] Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics Ta= 25°C Pulsed 1000 VGS= 0.9V VGS= 1.2V VGS= 1.5V VGS= 2.5V VGS= 4.5V 100 0.001 0.01 0.1 1 10000 VGS= 4.5V Pulsed 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 100 0.001 DRAIN-CURRENT : ID[A] Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 100 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. 0.1 VGS= 2.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 1000 100 1 0.001 10000 VGS= 1.2V Pulsed 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 100 0.001 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 3/5 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.5V Pulsed 0.001 0.01 10000 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] DRAIN-SOURCE VOLTAGE : VDS[V] 10000 10000 0.01 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.2 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 0.1 0.001 0 0 VDS= 10V Pulsed VGS= 0.7V VGS= 0.7V 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] DRAIN CURRENT : ID[A] VGS= 4.5V DRAIN CURRENT : ID[A] 0.2 10000 VGS= 0.9V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 1000 100 0.001 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅵ) 2014.12 - Rev.B Data Sheet 1 Ta=25°C Ta=25°C Ta=75°C Ta=125°C 0.1 VGS=0V Pulsed 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= 25°C 0.01 0.01 0.1 1 0.5 1 Fig.10 Forward Transfer Admittance vs. Drain Current Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS [V] tf 100 Ta=25°C VDD=25V VGS=4.5V RG=10Ω Pulsed 10 td(on) tr 1 0.1 1 DRAIN-CURRENT : ID[A] Fig.13 Switching Characteristics www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. 5000 Ta=25°C Pulsed 4000 ID= 0.01A 3000 ID= 0.20A 2000 1000 0 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] td(off) 0.01 0 DRAIN-CURRENT : ID[A] 1000 SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1 VDS= 10V Pulsed 0 2 4 6 8 GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 Ta=25°C f=1MHz VGS=0V 4 3 2 Ta=25°C VDD=25V ID= 0.2A RG=10Ω Pulsed 1 0 0 0.5 1 1.5 CAPACITANCE : C [pF] 10 SOURCE CURRENT : Is [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] RYM002N05 100 Ciss 10 Crss Coss 1 0.01 0.1 1 10 100 TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.15 Typical Capacitance vs. Drain-Source Voltage 4/5 2014.12 - Rev.B RYM002N05 Data Sheet Measurement circuits Pulse width VGS ID VDS RL 50% 10% D.U.T. RG 90% 50% 10% VGS VDS VDD 90% td(on) tr ton Fig.1-1 Switching time measurement circuit 10% 90% td(off) tf toff Fig.1-2 Switching waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. 5/5 2014.12 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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