Photo IC diode S9648-200SB Plastic package shaped the same as metal package The S9648-200SB photo IC has spectral response close to human eye sensitivity. Two photosensitive areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit. Compared to the previous type, the S9648-200SB offers lower output fluctuations for light sources producing the same illuminance at different color temperatures. The S9648-200SB is encapsulated in a plastic package having the same shape as a metal package. The shape of the S9648-100 also resembles our 5R type visible sensors (CdS photoconductive cells), so the S9648-200SB can be used as a replacement for those visible sensors. Features Applications Spectral response close to human eye sensitivity is attained without using visual-compensated filter. Energy-saving sensor for TVs, etc. Operation just as easy to use as a photodiode Lower output-current fluctuations compared with phototransistors and CdS photoconductive cells. Light dimmers for liquid crystal panels Various types of light level measurement Excellent linearity Low output fluctuations for light sources producing the same illuminance at different color temperatures Absolute maximum ratings (Ta=25 °C) Parameter Maximum reverse voltage Photocurrent Forward current Power dissipation*1 Operating temperature Storage temperature Symbol VR max IL IF P Topr Tstg Condition Value -0.5 to 12 5 5 250 -30 to +80 -40 to +85 No dew condensation*2 No dew condensation*2 Unit V mA mA mW °C °C *1: Power dissipation decreases at a rate of 3.3 mW/°C above Ta=25 °C. *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, unless otherwise noted.) Parameter Spectral response range Peak sensitivity wavelength Dark current Photocurrent Symbol λ λp ID IL Rise time*3 tr Fall time*3 tf Condition VR=5 V VR=5 V, 2856 K, 100 lx 10 to 90%, VR=7.5 V RL=10 kΩ, λ=560 nm 90 to 10%, VR=7.5 V RL=10 kΩ, λ=560 nm Min. 0.18 Typ. 300 to 820 560 1.0 - Max. 50 0.34 Unit nm nm nA mA - 6.0 - ms - 2.5 - ms *3: Rise/fall time measurement method (page 2) www.hamamatsu.com 1 Photo IC diode S9648-200SB Pulsed light from LED (λ=560 nm) 2.5 V 90% Vout 10% tr 7.5 V 0.1 μF tf Vout Load resistance RL KPICC0229EB Spectral response Photocurrent vs. illuminance (Typ. Ta=25 °C, VR=5 V) 1.0 (Typ. Ta=25 °C, VR=5 V, 2856 K) 10 mA 0.9 Human eye sensitivity 1 mA 0.7 Photocurrent Relative sensitivity 0.8 0.6 0.5 S9648-200SB 0.4 100 μA 10 μA 0.3 1 μA 0.2 0.1 0 200 400 600 800 1000 1200 Wavelength (nm) 100 nA 0.1 1 10 100 1000 10000 Illuminance (lx) KPICB0085EC KPICB0083EC 2 Photo IC diode S9648-200SB Rise/fall times vs. load resistance 100 Directivity (Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V) (Typ. Ta=25 °C, tungsten lamp) Rise/fall times (ms) 10 Rise time 30° 20° 10° 0° 10° 20° 30° 40° 40° 50° 50° 60° 60° 1 Fall time 70° 70° 80° 90° 100 80 0.1 80° 60 40 20 0 20 40 60 90° 80 100 Relative sensitivity (%) KPICB0174EA 0.01 100 1k 10 k 1M 100 k Load resistance (Ω) KPICB0077EB Operating circuit example Photodiode for signal detection Photodiode for signal offset Cathode Internal protection resistance (Approx. 150 Ω) The drawing surrounded by the dotted line shows a schematic diagram of the photo IC. Reverse bias power supply Current amp (Approx. 30000 times) Anode CL Vout RL KPICC0091EC The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a low-pass filter. Cutoff frequency (fc) ≈ 1 2πCLRL 3 Photo IC diode S9648-200SB Operating voltage, output characteristics Figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure 1. The output curves are shown for illuminance levels. The output curves rise from a reverse voltage (rising voltage) of approximately 0.7 V (±10%). To protect the photo IC diode from excessive current, a 150 Ω (±20%) protection resistor is inserted in the circuit. Reverse voltage VR when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across the protection resistor Rin [Equation (1)]. VR = Vbe(ON) + IL × Rin ............ (1) The photodiode’s reverse voltage (VR) is expressed by Equation (2) according to the voltage drop across the external resistor. This is indicated as load lines in Figure 2. VR = Vcc - IL × RL ............ (2) In Figure 2, the intersections between the output curves and the load lines are the saturation points. From these points, the maximum detectable light level can be specified. Since the maximum light level is determined by the supply voltage (Vcc) and load resistance (RL), adjust them according to the operating conditions. Note: The temperature characteristics of Vbe(ON) is approximately -2 mV/°C, and that of the protection resistor is approximately 0.1%/°C. [Figure 1] Measurement circuit example IL RL (external resistor) Rin=150 Ω ± 20% (internal protection resistor) Vcc Photo IC diode KPICC0128EC [Figure 2] Photocurrent vs. reverse voltage (Typ. Ta=25 °C) 5 1600 lx 1380 lx Internal protective resistance Rin: approx. 150 Ω Photocurrent (mA) 4 Saturation region approx. 1260 lx 1150 lx 3 880 lx Load line Vcc=5 V, RL=1 kΩ 2 Saturation region approx. 650 lx 600 lx Load line Vcc=3 V, RL=1 kΩ 300 lx 1 0 0 Rising voltage Vbe(ON)≈0.7 V 1 2 3 4 5 Reverse voltage (V) KPICB0107EC 4 Photo IC diode S9648-200SB Dimensional outline (unit: mm) 0.75 ± 0.25 0.13 ϕ5.0 ± 0.2 Center of photosensitive area Photosensitive area 0.46 × 0.32 2.54 ± 0.5 (specified at lead root) (2 ×) 1.0 max. 1.0 min. (2 ×) 0.5 Sn plated lead (1.0) (2 ×) 1.0 max. 25.4 min. (4.3) 3.5 ± 0.3 1.5 max. Photosensitive surface Fillet Tie-bar cut point (including burr, no plating) Anode Cathode Lead surface finish: Sn plating Packing: Polyethylene pack [anti-static type] (500 pcs/pack) KPICA0057ED Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer Information described in this material is current as of August, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIC1089E05 Aug. 2015 DN 5