Technical information Characteristics and use of photo IC diodes 1 [Figure 1] Spectral response Overview (a) Infrared type (➀) (Typ. Ta=25 °C, VR=5 V) 1.0 The photo IC diodes are devices that boost the photocurrent generated from a photodiode approx. 1300 times (or 30000 times). They output current and can be used in the same way as a photodiode applied with a reverse bias. The photo IC diodes are used in various types of light level detection applications. For example, a type with a spectral response close to human eye sensitivity is used as an energysaving sensor to adjust the brightness of TVs and the like. Relative sensitivity 0.8 0.6 0.4 0.2 Features 0 200 The photo IC diodes are two-terminal devices that are as easy to use as a photodiode yet produce a large current equivalent to that of a phototransistor. It also has good linearity characteristics. Table 1 shows the photo IC diode lineup. When classified by spectral response, there are two types available: infrared and visual-sensitive compensation. The visualsensitive compensation type provides a spectral response close to human eye sensitivity without a visual-sensitive compensation filter. 400 600 800 1000 1200 Wavelength (nm) KPICB0036EA (b) Visual-sensitive compensation type (➁) (Typ. Ta=25 °C, VR=5 V) 1.0 0.9 Human eye sensitivity Relative sensitivity 0.8 0.7 0.6 0.5 S9648-200SB 0.4 0.3 0.2 0.1 0 200 400 600 800 1000 1200 Wavelength (nm) KPICB0085EC [Table 1] Photo IC diode lineup Product S7183 S7184 Type Infrared type Package (plastic) SIP with lens Surface mount type Peak sensitivity wavelength (nm) 650 Photocurrent 2856 K, 100 lx (mA) 1.0 0.18 S9066-211SB SIP 0.19 to 0.35 S9067-201CT Surface mount type 0.18 to 0.34 S9648-200SB S10604-200CT S11153-01MT S11154-201CT Visual-sensitive compensation type Head-on type (same form as the CdS cell 5R type) 560 Surface mount type Surface mount type Surface mount type 0.18 to 0.34 0.21 to 0.39 0.325 to 0.495 580 0.07 to 0.15 1 (c) Visual-sensitive compensation type (➂) [Figure 3] Application circuit example (➁➂) Photodiode for signal detection (Typ. Ta=25 °C, VR=5 V) 1.0 Photodiode for signal offset 0.9 Cathode Relative sensitivity 0.8 0.7 Internal protection resistance (approx. 150 Ω) 0.6 0.5 0.4 The drawing surrounded by the dotted line shows a schematic diagram of photo IC diode. S11154-201CT 0.3 Human eye sensitivity 0.2 0.1 0 200 Reverse bias power supply Current amp (approx. 30000 times) Anode 400 600 800 1000 1200 Vout RL CL Wavelength (nm) KPICC0091ED KPICB0129EB [Figure 4] Photocurrent vs. illuminance (S9648-200SB) (Typ. Ta=25 °C, VR=5 V, 2856 K) 10 mA 2 Structure Figure 2 shows a photo IC diode application circuit example. The photo IC diode amplifies the photocurrent generated by a photodiode. [Figure 2] Application circuit example (➀) Drawing surrounded by dotted lines shows a schematic diagram of photo IC diode. Cathode Photocurrent 1 mA Internal protection resistance (approx. 150 Ω) 100 μA 10 μA 1 μA Reverse bias power supply 100 nA 0.1 1 10 100 1000 10000 Illuminance (lx) KPICB0083EC Photodiode for signal detection Current amp (approx. 1300 times) [Figure 5] Dark current vs. ambient temperature (S9648-200SB) Anode CL Vout (Typ. VR=5 V) 10 μA RL 1 μA KPICC0018EC 3 Characteristics This section explains the characteristics of a typical photo IC diode S9648-200SB. Figure 3 is an application circuit example of the visualsensitive compensation type. There are two photosensitive areas on the chip, one for signal detection and another for compensation with sensitivities only in the near infrared region. An internal arithmetic circuit subtracts the photocurrent of the photodiode for compensation from the photocurrent of the photodiode for signal detection resulting in a spectral response with sensitivities limited more or less to the visible region. The signal is then amplified by a current amplifier and is output. Figure 4 shows the linearity of the photocurrent. If the illuminance exceeds 500 lx, the linearity tends to degrade. 2 Dark current 100 nA 10 nA 1 nA 100 pA 10 pA -50 -25 0 25 50 75 100 Ambient temperature (°C) KPICB0157EB [Figure 6] Photocurrent vs. ambient temperature (S9648-200SB) [Figure 9] Directivity (S9648-200SB) (Typ. Ta=25 °C, tungsten lamp) (Typ. VR=5 V, 2856 K, 100 lx, * 1 assumed at 25 °C) 1.8 30° 10° 0° 10° 20° 30° 40° 40° 50° 1.4 50° 60° 60° 1.2 70° 70° 1.0 80° 0.8 90° 100 80 80° 60 40 20 0 20 40 60 90° 80 100 Relative sensitivity (%) 0.6 KPICB0174EA 0.4 [Figure 10] Dimensional outline (S9648-200SB, unit: mm) 0.2 -25 0 25 50 75 Center of photosensitive area Photosensitive area 0.46 × 0.32 100 Ambient temperature (°C) KPICB0158EB 0.13 0 -50 ϕ5.0 ± 0.2 Photocurrent (relative value*) 1.6 20° 0.75 ± 0.25 [Figure 7] Dark current vs. reverse voltage (S9648-200SB) 3.5 ± 0.3 1.5 max. 4.0 (4.3) 3.0 (2 ×) 0.5 Sn plated lead 1.0 2.54 ± 0.5 (specified at lead root) 0 0 2 4 6 8 10 12 (2 ×) 1.0 max. 14 Fillet Tie-bar cut point (including burr, no plating) Anode Cathode Lead surface finish: Sn plating Packing: polyethylene pack [anti-static type] (500 pcs/pack) Reverse voltage (V) KPICB0159EA [Figure 8] Rise and fall times vs. load resistance (S9648-200SB) 100 (1.0) (2 ×) 1.0 max. 2.0 1.0 min. Dark current (nA) Photosensitive surface 25.4 min. (Typ. Ta=25 °C) 5.0 (Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V) KPICA0057ED Rise/fall times (ms) 10 Rise time 1 Fall time 0.1 0.01 100 1k 10 k 100 k 1M Load resistance (Ω) KPICB0077EB [Table 2] Absolute maximum ratings (Ta=25 °C) of S9648-200SB Parameter Symbol Value Unit VR -0.5 to 12 V Photocurrent IL 5 mA Forward current IR 5 mA Reverse voltage Operating temperature Topr -30 to +80 °C Storage temperature Tstg -40 to +85 °C 3 [Table 3] Electrical and optical characteristics (Ta=25 °C) of S9648-200SB Parameter Symbol Condition Spectral response range λ Peak sensitivity wavelength λp Dark current ID VR=5 V Photocurrent IL Rise time* Fall time* Min. Typ. Max. Unit 320 to 820 nm - 560 - nm - 1.0 50 nA VR=5 V, 2856 K, 100 lx 0.18 - 0.34 mA tr 10% to 90%, VR=7.5 V RL=10 kΩ, λ=560 nm - 6.0 - ms tf 90% to 10%, VR=7.5 V RL=10 kΩ, λ=560 nm - 2.5 - ms * Measurement method of rise and fall times Pulsed light from LED (λ=560 nm) 2.5 V 90% Vout 10% Photo IC diode 0.1 μF tr 7.5 V tf Vout Load resistance RL KPICC0229EC [Figure 11] Color temperature distribution producing the same integral value at human eye sensitivity 1.0 Human eye sensitivity Light output (reference value) 2856 K 0.8 0.6 0.4 5500 K 0.2 0 200 1.2 Relative sensitivity (1 assumed for 2856 K) (Typ. Ta=25 °C) [Figure 12] Light source color temperature vs. output (Typ. Ta=25 °C, black body radiant flux light source) S11154-201CT 1 S9648-200SB 0.8 0.6 0.4 0.2 0 2000 400 600 800 1000 3000 4000 5000 6000 7000 1200 Color temperature (K) Wavelength (nm) KPICB0106EC Illuminance visible to a human at 2856 K Illuminance visible to a human at 5500 K KPICB0105EA Figure 11 shows the human eye sensitivity cur ve (characteristics of the human eye sensitivity to light) and color temperature spectra. The graph is plotted so that the illuminance observed by a person is the same for each color temperature. It is desirable for the sensor’s spectral response to match the human eye sensitivity curve, but in reality, there is deviation. This deviation causes color temperature error output. If we assume an incandescent lamp that includes light output in the infrared region and a fluorescent lamp that hardly includes it having the same illuminance, the output values detected by a sensor that has sensitivities in the infrared region will be different. A visual-sensitive compensation type photo IC diode, such as the S11154-201CT, does not use an external visualsensitive compensation filter, but its spectral response is adjusted close to human eye sensitivity to reduce color temperature error output (see Figure 12). 4 4 How to use Because the photo IC diode amplifies the photocurrent to output current, a large output voltage can be obtained by connecting a load resistance. Connect the cathode so that a positive potential is applied to it [Figures 2, Figure 3]. If high-frequency components must be eliminated, we recommend that a low-pass filter load capacitance (CL) be inserted in parallel with the load resistance (RL). In this case, the cutoff frequency (fc) is expressed by equation (1). fc = 1 ............ (1) 2πCLRL Figure 14 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure 13. The output curves are shown for each illuminance level of light source A conversion. The output curve rises from a reverse voltage (rising voltage) of approximately 0.7 V. VR = Vbe(ON) + IL × Rin ............ (2) [Figure 13] Measurement circuit example IL RL (external resistor) Rin=150 Ω (protection resistor) [Figure 14] Photocurrent vs. reverse voltage (typical example) (Typ. Ta=25 °C) 5 1600 lx 1380 lx Internal protective resistance Rin: approx. 150 Ω 4 Photocurrent (mA) To protect the internal circuit in the event a current exceeding the absolute maximum rating flows, a protection resistor of approximately 150 Ω (±20%) is inserted. Reverse voltage (VR) when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across protective resistor (Rin). Saturation region approx. 1260 lx 1150 lx 3 880 lx Load line Vcc=5 V, RL=1 kΩ 2 Saturation region approx. 650 lx 600 lx Load line Vcc=3 V, RL=1 kΩ 300 lx 1 Vcc 0 0 Photo IC diode Rising voltage Vbe(ON)≈0.7 V 1 2 3 4 5 Reverse voltage (V) KPICB0107EC KPICC0128ED The photo IC diode’s reverse voltage (V R) is expressed by equation (3) according to the voltage drop across the external resistor. This is indicated as load lines in Figure 14. VR = Vcc - IL × RL ............ (3) In Figure 14, the intersections between the output curves and the load lines are the saturation points. From these points, the maximum detectable light level can be specified. As the maximum light level is determined by supply voltage (Vcc) and load resistance (RL), change them according to your conditions. Note: Vbe(ON) has a temperature characteristics of approximately -2 mV/°C, and the protective resistor approximately 0.1%/°C. Information described in this material is current as of August, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. 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No. KPIC9007E03 Aug. 2015 DN 5