TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 30 V RDS(on) (max) VGS = 10V 12 VGS = 4.5V 17 Qg Features mΩ 3.6 nC Block Diagram ● Advanced Trench Technology ● Low On-Resistance Ordering Information Part No. Package Packing TSM15N03PQ33 RGG PDFN33 5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. N-Channel MOSFET Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC=25°C Continuous Drain Current (Note 3) TC=70°C TA=25°C 14 ID TA=70°C Drain Current-Pulsed (Note 1) 14 A 9.7 7.8 IDM 35 A Avalanche Current, L=0.1mH IAS 9 A Avalanche Energy, L=0.1mH EAS 4 mJ TC=25°C Maximum Power Dissipation TC=70°C TA=25°C 15.6 PD TA=70°C Storage Temperature Range Operating Junction Temperature Range 10 W 3.2 2.1 TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Limit Thermal Performance Parameter Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec RӨJA 1/6 Unit 8 o 39 o C/W C/W Version: B14 TSM15N03PQ33 30V N-Channel Power MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 30 -- -- V -- 9 12 -- 13 17 Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance VGS = 0V, ID = 250µA VGS = 10V, ID = 7A VGS = 4.5V, ID = 6A RDS(ON) mΩ Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 -- 2.5 V Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Qg -- 3.6 -- Qgs -- 1.2 -- Qgd -- 1 -- Ciss -- 415 -- Coss -- 90 -- Crss -- 38 -- td(on) -- 13 -- tr -- 10 -- td(off) -- 11 -- tf -- 8 -- VSD -- 0.8 1.3 V tfr -- 15 -- ns Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 15V, ID = 7.8A, VGS = 4.5V Input Capacitance Output Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance nC pF Switching Turn-On Delay Time Turn-On Rise Time VGS = 4.5V, VDS = 15V, Turn-Off Delay Time ID = 6.3A, RG = 1Ω Turn-Off Fall Time ns Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage VGS=0V, IS=7.8A Reverse Recovery Time IS = 7.8A, TJ=25 C o dI/dt = 100A/µs Reverse Recovery Charge Qfr -7 -nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. 3. The maximum current rating is limited by package. 2/6 Version: B14 TSM15N03PQ33 30V N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Gate Threshold Voltage IDS=250µA Gate Source On Resistance Drain-Source On Resistance Drain-Source On-Resistance Source-Drain Diode Forward Voltage 3/6 Version: B14 TSM15N03PQ33 30V N-Channel Power MOSFET Electrical Characteristics Curves Power Derating Drain Current vs. Junction Temperature Safe Operation Area Transient Thermal Impedance Capacitance Gate Charge 4/6 Version: B14 TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: B14 TSM15N03PQ33 30V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: B14