TSM40N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS (V) 30 ID (A) 4.6 @ VGS =10V 19 5.9 @ VGS =4.5V 16 Block Diagram Features d Advanced Trench Technology Low On-Resistance Low gate charge typical @ 12nC (Typ.) Low Crss typical @ 140pF (Typ.) de ● ● ● ● RDS(on)(mΩ) Ordering Information Package Packing PDFN33 5Kpcs / 13” Reel mm Note: “G” denote for Halogen Free Product en Part No. TSM40N03PQ33 RGG N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Gate-Source Voltage e co Drain-Source Voltage Symbol Limit Unit VDS 30 V VGS ±20 V TC=25°C tR Continuous Drain Current TC=70°C TA=25°C 40 ID TA=70°C 40 A 25 20 IDM 100 A Avalanche Current, L=0.5mH IAS, IAR 38 A Avalanche Energy, L=0.5mH EAS, EAR 72 mJ No Drain Current-Pulsed Note 1 Maximum Power Dissipation TC=25°C TC=70°C TA=25°C 52 PD TA=70°C Storage Temperature Range Operating Junction Temperature Range 33 W 3.8 2.4 TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Limit * Limited by maximum junction temperature Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec 1/4 Unit RӨJC 2.4 o RӨJA 33 o C/W C/W Version: A12 TSM40N03PQ33 30V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 30 -- -- V -- 3.6 4.6 -- 4.8 5.9 Static Drain-Source Breakdown Voltage VGS = 10V, ID = 19A VGS = 4.5V, ID = 16A RDS(ON) mΩ VDS = VGS, ID = 250uA VGS(TH) 1.15 -- 2.2 V Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA nC Dynamic Total Gate Charge VDS = 15V, ID = 19A, Gate-Source Charge Gate-Drain Charge Input Capacitance VDS = 15V, VGS = 0V, Output Capacitance -- 12 -- Qgs -- 5.4 -- Qgd -- 4.6 -- f = 1.0MHz Ciss -- 1700 -- Coss -- 350 -- Crss -- 140 -- td(on) -- 25 -- tr -- 20 -- td(off) -- 25 -- tf -- 15 -- VSD -- 0.8 1.2 V tfr -- 25 -- nS mm Reverse Transfer Capacitance Qg en VGS = 4.5V Switching Turn-On Delay Time Turn-On Rise Time VGS = 4.5V, VDS = 15V, Turn-Off Delay Time RG = 1Ω e co Turn-Off Fall Time d Gate Threshold Voltage de Drain-Source On-State Resistance VGS = 0V, ID = 250uA pF nS Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage VGS=0V, IS=10A Reverse Recovery Time IS = 10A, TJ=25 C tR o No dI/dt = 100A/us Reverse Recovery Charge Qfr -17 -nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air 3. The maximum current rating is limited by package. 2/4 Version: A12 TSM40N03PQ33 30V N-Channel Power MOSFET Unit: Millimeters No tR e co mm en de d PDFN33 Mechanical Drawing 3/4 Version: A12 TSM40N03PQ33 No tR e co mm en de d 30V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12