TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on) (max) 1.4 Ω Qg 25 nC TO-252 (DPAK) Features Block Diagram ● Low RDS(ON) 1.4Ω (Max.) ● Low gate charge typical @ 25nC (Typ.) ● Low Crss typical @ 15pF (Typ.) ● Fast Switching Ordering Information Part No. Package Packing TSM6N50CI C0G ITO-220 50pcs / Tube TSM6N50CP ROG TO-252 2.5kpcs / 13” Reel TSM6N50CH C5G TO-251 75pcs / Tube Note: “G” denotes for Halogen- and Antimony-free as those which contain N-Channel MOSFET <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V 5.6 A 3 A IDM 15 A EAS 180 mJ IAR 5 A TA = 25°C Continuous Drain Current Pulsed Drain Current TA = 100°C (Note 1) Single Pulse Avalanche Energy Avalanche Current (Repetitive) (Note 2 ) (Note 3) Total Power Dissipation @ TC = 25°C ITO-220 TO-252. TO-251 Operating Junction Temperature Storage Temperature Range Document Number: DS_P0000132 1 ID PTOT 25 90 W TJ 150 °C TSTG -55 to +150 °C Version: E15 TSM6N50 500V N-Channel Power MOSFET Thermal Performance Parameter (Note 4) Symbol ITO-220 Thermal Resistance - Junction to Case TO-252. TO-251 Thermal Resistance - Junction to Ambient Limit Unit 5 RӨJC °C/W 2.78 RӨJA 62.5 °C/W Electrical Specifications (TJ=25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2.8A RDS(ON) -- 1.15 1.4 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 µA Forward Transfer Conductance VDS = 8V, ID = 1A gfs -- 2.6 -- S Qg -- 25 33 Qgs -- 5 -- Qgd -- 10 -- Ciss -- 680 900 Coss -- 85 110 Crss -- 15 20 td(on) -- 20 50 tr -- 40 90 td(off) -- 90 190 tf -- 45 100 Dynamic (Note 5,6) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400V, ID = 5A, VGS = 10V Input Capacitance Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Switching nC pF (Note 5,6) Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 5A, Turn-Off Delay Time VDD = 250V, RG =25Ω Turn-Off Fall Time ns Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS -- -- 5 A Source Current (Pulse) the MOSFET ISM -- -- 15 A Diode Forward Voltage IS = 5A, VGS = 0V VSD -- -- 1.6 V Reverse Recovery Time VGS = 0V, IS = 5A, tfr -- 430 -- ns Reverse Recovery Charge dIF/dt = 100A/µs Qfr -- 2 -- µC Note: 1. Limited by maximum junction temperature 2. VDD = 50V, IAS = 5A, L = 10mH, Starting TJ = 25°C 3. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 4. Surface mounted on FR4 board t ≤ 10sec 5. Pulse test: pulse width ≤300µS, duty cycle ≤2% 6. Essentially Independent of Operating Temperature Document Number: DS_P0000132 2 Version: E15 TSM6N50 500V N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000132 3 Version: E15 TSM6N50 500V N-Channel Power MOSFET Electrical Characteristics Curves On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000132 4 Version: E15 TSM6N50 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code Document Number: DS_P0000132 5 Version: E15 TSM6N50 500V N-Channel Power MOSFET TO-251 (IPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000132 6 Version: E15 TSM6N50 500V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr V =Aug S =May T =Jun U =Jul W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000132 7 Version: E15 TSM6N50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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