TSM7NC60CF Taiwan Semiconductor N-Channel Power MOSFET 600V, 7A, 1.2Ω FEATURES KEY PERFORMANCE PARAMETERS ● 100% UIS and Rg tested ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 1.2 Ω Qg 24 nC APPLICATIONS ● AC/DC LED Lighting ● Power Supply ITO-220S ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Limit UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) 7 4.4 A IDM 21 A PDTOT 44.6 W Single Pulse Avalanche Energy (Note 3) EAS 270 mJ Single Pulse Avalanche Current (Note 3) IAS 5.2 A TJ, TSTG - 55 to +150 °C SYMBOL Limit UNIT Junction to Case Thermal Resistance RӨJC 2.8 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. 1 Version: A1605 TSM7NC60CF Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.5 4.5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA VGS = 10V, ID = 2A RDS(on) -- 1.07 1.2 Ω VDS = 10V, ID = 4A gfs -- 5 -- S Qg -- 24 -- Qgs -- 7.2 -- Qgd -- 8.2 -- Ciss -- 1169 -- Coss -- 62 -- Crss -- 5 -- Rg 1 3.4 6.8 td(on) -- 10.4 -- tr -- 17 -- td(off) -- 20 -- tf -- 27.6 -- VSD -- -- 1.3 V Drain-Source On-State Resistance (Note 4) Forward Transconductance Dynamic (Note 4) (Note 5) Total Gate Charge VDS = 480V, ID = 4A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 50V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz, open drain nC pF Ω (Note 6) Turn-On Delay Time Turn-On Rise Time VDD = 300V, RG = 5Ω, Turn-Off Delay Time ID = 4A, VGS = 10V Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 4) IS = 4A, VGS = 0V Reverse Recovery Time IS = 4A trr -- 246 -- ns Reverse Recovery Charge dIF/dt = 100A/μs Qrr -- 2 -- μC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 20mH, IAS = 5.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o ORDERING INFORMATION PART NO. PACKAGE PACKING TSM7NC60CF C0G ITO-220S 50pcs / Tube 2 Version: A1605 TSM7NC60CF Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 7 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) 7 VGS=10V VGS=9V VGS=8V VGS=7V 6 5 VGS=6V 4 3 2 1 VGS=5V 0 6 5 4 3 25℃ 1 150℃ 0 0 2 4 6 8 10 0 On-Resistance vs. Drain Current 4 6 8 10 Gate-Source Voltage vs. Gate Charge 10 1.6 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 1.2 VGS=10V 1 0.8 0.6 0.4 VDS=480V ID=4A 8 6 4 2 0 1 2 3 4 5 6 7 0 5 10 3 VGS=10V ID=2A 2 1.5 1 0.5 0 -75 -50 -25 0 25 50 75 20 25 100 125 150 On-Resistance vs. Gate-Source Voltage RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 2.5 15 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 2 TJ, Junction Temperature (°C) 1.6 1.4 1.2 1 ID=2A 0.8 0.6 0.4 6 7 8 9 10 VGS, Gate to Source Voltage (V) 3 Version: A1605 TSM7NC60CF Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage 2000 C, Capacitance (pF) 1800 1600 1400 CISS 1200 1000 800 600 400 COSS 200 CRSS 1.2 ID=1mA 1.1 1 0.9 0.8 0 0.1 1 10 100 1000 -75 VDS, Drain to Source Voltage (V) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 100 IS, Reverse Drain Current (A) ID, Drain Current (A) -50 RDS(ON) 10 1 0.1 SINGLE PULSE RӨJC=2.8°C/W TC=25°C 0.01 10 25℃ 150℃ -55℃ 1 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=2.8°C/W 1 0.1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.01 0.001 0.0001 0.001 0.01 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.1 1 10 t, Square Wave Pulse Duration (sec) 4 Version: A1605 TSM7NC60CF Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220S MARKING DIAGRAM TSC 7NC60 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: A1605 TSM7NC60CF Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1605