TSM650N15CR Taiwan Semiconductor N-Channel Power MOSFET 150V, 24A, 65mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT VDS 150 V ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 RDS(on) VGS = 10V 65 (max) VGS = 6V 80 mΩ Qg 24 nC APPLICATIONS ● PoE ● LED Lighting ● Telecom Power PDFN56 Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25°C Continuous Drain Current Pulsed Drain Current (Note 1) (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation LIMIT UNIT VDS 150 V VGS ±25 V ID TA = 25°C Total Power Dissipation SYMBOL TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 24 4 A IDM 96 A IAS EAS 18 49 A mJ PD PD 96 19 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.3 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1603 TSM650N15CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 150 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 2 2.7 4 V Gate-Source Leakage Current VGS = ±25V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 47 65 -- 55 80 gfs -- 11 -- Qg -- 36 -- Qg -- 24 -- Qgs -- 10 -- Qgd -- 12 -- Ciss -- 1829 -- Coss -- 94 -- Crss -- 65 -- Rg 0.5 1.5 3 td(on) -- 9.4 -- tr -- 6.4 -- td(off) -- 19.4 -- tf -- 4.8 -- VSD -- -- 1 V VGS = 0V, VDS = 150V Drain-Source Leakage Current IDSS VGS = 0V, VDS = 150V TJ = 125°C Drain-Source On-State Resistance VGS = 10V, ID = 4A (Note 3) VGS = 6V, ID = 4A Forward Transconductance Dynamic (Note 3) RDS(on) VDS = 5V, ID = 4A µA mΩ S (Note 4) VGS = 10V, VDS = 75V, Total Gate Charge ID = 4A Total Gate Charge VGS = 6V, VDS = 75V, Gate-Source Charge ID = 4A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 75V Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz, open drain nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 75V, Turn-Off Delay Time ID = 4A, RG = 2Ω, Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 4A Reverse Recovery Time IS = 4A , trr -- 51 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 105 -- nC Notes: 1. Current limited by package. 2. L = 0.3mH, VGS = 10V, VDD = 50V, RG = 25Ω, IAS = 18A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM650N15CR RLG PACKAGE PACKING PDFN56 2,500pcs / 13” Reel 2 Version: A1603 TSM650N15CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Transfer Characteristics 30 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V 24 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) Output Characteristics 30 VGS=5.5V 18 12 VGS=5V 6 VGS=4.5V 0 24 18 25℃ 12 6 150℃ 0 0 1 2 3 4 5 0 1 On-Resistance vs. Drain Current 3 4 5 6 7 8 Gate-Source Voltage vs. Gate Charge 10 0.1 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.09 0.08 0.07 VGS=6V 0.06 0.05 VGS=10V 0.04 0.03 0.02 VDS=75V ID=4A 8 6 4 2 0 0 6 12 18 24 30 0 10 ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Ω) VGS=10V ID=4A 2 1.5 1 0.5 0 -75 -50 -25 0 25 50 75 30 40 On-Resistance vs. Gate-Source Voltage 3 2.5 20 Qg, Gate Charge (nC) On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 100 125 150 0.1 0.09 0.08 0.07 0.06 ID=4A 0.05 0.04 0.03 0.02 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 3 Version: A1603 TSM650N15CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage C, Capacitance (pF) 3000 2500 2000 CISS 1500 1000 500 CRSS COSS 0 1.2 ID=1mA 1.1 1 0.9 0.8 0 25 50 75 100 125 150 -75 VDS, Drain to Source Voltage (V) -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage ID, Drain Current (A) IS, Reverse Drain Current (A) 100 100 RDS(ON) 100us 10 1ms 1 10ms DC SINGLE PULSE RӨJC=1.3°C/W TC=25°C 150℃ 10 25℃ -55℃ 1 0.1 0.1 1 10 0.2 100 VDS, Drain to Source Voltage (V) 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=1.3°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 1 t, Square Wave Pulse Duration (sec) 4 Version: A1603 TSM650N15CR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 650N15 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: A1603 TSM650N15CR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1603