TSM024NA04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 170A, 2.4mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS 40 V RDS(on) VGS = 10V 2.4 (max) VGS = 4.5V 3 mΩ Qg 33 nC APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● DC-DC converter ● Secondary Synchronous Rectification PDFN56 Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current Pulsed Drain Current ID TA = 25°C (Note 1) (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 170 25 A IDM 680 A IAS EAS 48 346 A mJ PD PD 125 25 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1603 TSM024NA04LCR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.7 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 1.8 2.4 -- 2.2 3 gfs -- 50 -- Qg -- 67 -- Qg -- 33 -- Qgs -- 12 -- Qgd -- 11 -- Ciss -- 4224 -- Coss -- 696 -- Crss -- 206 -- Rg 0.4 1.3 2.6 td(on) -- 8.4 -- tr -- 3.6 -- td(off) -- 32.6 -- tf -- 7.8 -- VSD -- -- 1.2 V VGS = 0V, VDS = 40V Drain-Source Leakage Current IDSS VGS = 0V, VDS = 40V TJ = 125°C Drain-Source On-State Resistance VGS = 10V, ID = 25A (Note 3) VGS = 4.5V, ID = 25A Forward Transconductance Dynamic (Note 3) RDS(on) VDS = 5V, ID = 25A µA mΩ S (Note 4) VGS = 10V, VDS = 20V, Total Gate Charge ID = 25A Total Gate Charge VGS = 4.5V, VDS = 20V, Gate-Source Charge ID = 25A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 20V Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz, open drain nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 20V, Turn-Off Delay Time ID = 25A, RG = 2Ω, Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 25A Reverse Recovery Time IS = 25A , trr -- 39 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 45 -- nC Notes: 1. 2. 3. 4. Current limited by package. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 48A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM024NA04LCR RLG PDFN56 2,500pcs / 13” Reel 2 Version: A1603 TSM024NA04LCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) 40 VGS=3V 30 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 20 10 30 20 10 0 1 2 3 0 4 1 2 3 4 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge 0.005 10 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) -55℃ 0 0 0.004 0.003 VGS=4.5V 0.002 VGS=10V 0.001 0 VDS=20V ID=25A 8 6 4 2 0 0 8 16 24 32 40 0 20 2 VGS=10V ID=25A 1.6 1.4 1.2 1 0.8 0.6 -75 -50 -25 0 25 50 75 60 80 100 125 150 On-Resistance vs. Gate-Source Voltage RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Junction Temperature 1.8 40 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 25℃ 150℃ TJ, Junction Temperature (°C) 0.01 0.008 0.006 0.004 ID=25A 0.002 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) 3 Version: A1603 TSM024NA04LCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage 5000 C, Capacitance (pF) 4500 CISS 4000 3500 3000 2500 2000 1500 1000 COSS 500 CRSS 1.2 ID=1mA 1.1 1 0.9 0.8 0 0 10 20 30 -75 40 Maximum Safe Operating Area, Junction-to-Case -25 0 25 50 75 100 125 150 Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 1000 RDS(ON) ID, Drain Current (A) -50 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) 100 10 SINGLE PULSE RӨJC=1°C/W TC=25°C 1 10 25℃ 150℃ 1 -55℃ 0.1 0 1 10 100 0.2 VDS, Drain to Source Voltage (V) 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=1°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.1 1 t, Square Wave Pulse Duration (sec) 4 Version: A1603 TSM024NA04LCR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 024NA04 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 5 Version: A1603 TSM024NA04LCR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A1603