TSM070NA04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 91A, 7mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS 40 V RDS(on) VGS = 10V 7 (max) VGS = 4.5V 8.9 mΩ Qg 11.5 nC APPLICATIONS ● Motor Control for BLDC ● Battery Power Management ● DC-DC converter ● 2nd Synchronous Rectifier PDFN56 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current Pulsed Drain Current ID TA = 25°C (Note 1) (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 91 14 A IDM 364 A IAS EAS 33 163 A mJ PD PD 113 22 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.1 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1602 TSM070NA04LCR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.6 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 4.5 7 -- 5.7 8.9 gfs -- 41 -- Qg -- 23.5 -- Qg -- 11.5 -- Qgs -- 4.3 -- Qgd -- 3.8 -- Ciss -- 1469 -- Coss -- 317 -- Crss -- 80 -- Rg 0.8 2.8 5.6 td(on) -- 14.1 -- tr -- 8.9 -- td(off) -- 48 -- tf -- 8.4 -- VSD -- -- 1.2 V VGS = 0V, VDS = 40V Drain-Source Leakage Current VGS = 0V, VDS = 40V IDSS TJ = 125°C Drain-Source On-State Resistance Forward Transconductance Dynamic VGS = 10V, ID = 14A VGS = 4.5V, ID = 14A VDS = 5V, ID = 14A RDS(on) µA mΩ S (Note 4) VGS = 10V, VDS = 20V, Total Gate Charge ID = 14A Total Gate Charge VGS = 4.5V, VDS = 20V, Gate-Source Charge ID = 14A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 20V Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz f = 1.0MHz, open drain nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 20V, Turn-Off Delay Time ID = 9A, RG = 10Ω, Turn-Off Fall Time Source-Drain Diode ns (Note 3) Forward Voltage VGS = 0V, IS = 14A Reverse Recovery Time IS = 14A , trr -- 19 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 12 -- nC Notes: 1. 2. 3. 4. Current limited by package. L = 0.3mH, VGS = 10V, VDS = 30V, RG = 25Ω, IAS = 33A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. 2 Version: A1602 TSM070NA04LCR Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM070NA04LCR RLG PDFN56 2,500pcs / 13” Reel 3 Version: A1602 TSM070NA04LCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 32 24 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) 40 VGS=3V 16 8 0 32 25℃ 24 -55℃ 16 8 150℃ 0 0 1 2 3 4 0 On-Resistance vs. Drain Current 3 4 10 0.01 0.008 VGS=4.5V 0.006 0.004 VGS=10V 0.002 VDS=15V ID=14A 8 6 4 2 0 0 6 12 18 24 30 0 5 10 15 20 25 Qg, Gate Charge (nC) ID, Drain Current (A) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 2.5 100 VGS=10V ID=14A 2 IS, Reverse Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 2 Gate-Source Voltage vs. Gate Charge 0.012 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.5 1 0.5 0 10 150℃ 1 25℃ -55℃ 0.1 -75 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) 4 Version: A1602 TSM070NA04LCR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage 1800 C, Capacitance (pF) 1600 CISS 1400 1200 1000 800 600 400 COSS 200 CRSS 0 1.2 ID=250uA 1.1 1 0.9 0.8 0 10 20 30 40 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case 1000 ID, Drain Current (A) RDS(ON) 100 10 SINGLE PULSE RӨJC=1.1°C/W TC=25°C 1 0 1 10 100 VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 10 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 SINGLE PULSE RӨJC=1.1°C/W 0.1 t, Square Wave Pulse Duration (sec) 5 Version: A1602 TSM070NA04LCR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 070NA04 GYWWF G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 6 Version: A1602 TSM070NA04LCR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: A1602