VS-UFB130FA40 Datasheet

VS-UFB130FA40
www.vishay.com
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 130 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
SOT-227
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
VR
400 V
IF(AV) per module at TC = 114 °C
130 A
trr
40 ns
Type
Modules - Diode FRED Pt®
Package
SOT-227
The VS-UFB130FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery current
shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored charge
and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
400
V
Cathode to anode voltage
VR
Continuous forward current per diode
IF
TC = 123 °C
65
Single pulse forward current per diode
IFSM
TC = 25 °C
800
PD
TC = 123 °C
144
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
VISOL
TJ, TStg
Any terminal to case, t = 1 minute
A
W
2500
V
-55 to +175
°C
Revision: 31-May-16
Document Number: 93602
1
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VS-UFB130FA40
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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Cathode to anode breakdown voltage
TEST CONDITIONS
VBR
Forward voltage
IR = 100 μA
VFM
Reverse leakage current
IRM
Junction capacitance
CT
MIN.
TYP.
MAX.
UNITS
400
-
-
IF = 60 A
-
1.16
1.37
IF = 60 A, TJ = 175 °C
-
0.93
1.09
VR = VR rated
-
-
50
μA
V
TJ = 175 °C, VR = VR rated
-
-
1
mA
VR = 400 V
-
67
-
pF
UNITS
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
MIN.
TYP.
MAX.
-
40
-
TJ = 25 °C
-
86
-
TJ = 125 °C
-
155
-
IF = 50 A
TJ = 25 °C
IRRM
Reverse recovery charge
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
dIF/dt = 200 A/μs
TJ = 125 °C
Qrr
VR = 200 V
-
8.4
-
-
18.4
-
TJ = 25 °C
-
350
-
TJ = 125 °C
-
1400
-
MIN.
TYP.
MAX.
-
-
0.72
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
TEST CONDITIONS
RthJC
RthCS
-
-
0.36
Flat, greased surface
-
0.10
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.3 (11.5)
Nm (lbf.in)
Weight
Mounting torque
Case style
°C/W
SOT-227
1000
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
UNITS
100
TJ = 175 °C
TJ = 25 °C
10
100
TJ = 175 °C
10
1
0.1
0.01
TJ = 25 °C
0.001
1
0
0.5
1
1.5
2
2.5
0
50
100
150
200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 31-May-16
Document Number: 93602
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB130FA40
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
1
10
100
1000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
PDM
DC
0.1
t1
Single pulse
(thermal resistance)
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.0001
0.001
0.01
0.1
1
10
175
150
150
125
Average Power Loss (W)
Allowable Case Temperature (°C)
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
125
DC
100
75
Square wave (D = 0.50)
Rated VR applied
50
25
100
RMS limit
75
50
25
DC
0
D = 0.05
D = 0.10
D = 0.20
D = 0.33
D = 0.50
0
0
20
40
60
80
100
120
140
160
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
0
10 20 30 40 50 60 70 80 90 100 110 120
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 31-May-16
Document Number: 93602
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB130FA40
www.vishay.com
Vishay Semiconductors
160
150
140
3050
VRR = 200 V
IF = 50 A
VRR = 200 V
IF = 50 A
2550
130
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
2050
Qrr (nC)
trr (ns)
120
110
100
1550
90
1050
80
70
550
60
50
100
50
100
1000
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 31-May-16
Document Number: 93602
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB130FA40
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
UF
B
130
F
A
40
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast rectifier
3
-
Ultrafast Pt diffused
4
-
Current rating (130 = 130 A)
5
-
Circuit configuration (2 separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (40 = 400 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
2 separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 31-May-16
Document Number: 93602
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000