RFP10N15 Data Sheet March 1999 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs Features These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.300Ω • 10A, 150V • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Formerly developmental type TA09192. Ordering Information PART NUMBER RFP10N15 PACKAGE TO-220AB File Number 1445.3 G BRAND RFP10N15 S NOTE: When ordering, include the entire part number. Packaging TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP10N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP10N15 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 150 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 150 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 10 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 25 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 150 - - V Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0 Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, TC = 125oC - - 25 mA VGS = ±20V, VDS = 0 - - ±100 nA Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance(Note 2) rDS(ON) ID = 10A, VGS = 10V, (Figures 6, 7) - - 0.300 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 10A, VGS = 10V - - 3.0 V ID ≈ 5A, VDD = 75V, RG = 50Ω, VGS = 10V, RL = 14.7Ω (Figures 10, 11, 12) - 40 60 ns - 165 250 ns td(OFF) - 90 135 ns tf - 90 135 ns - - 850 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS - - 230 pF Reverse Transfer Capacitance CRSS - - 100 pF - - 2.083 oC/W MIN TYP MAX UNITS ISD = 5A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 200 - ns Thermal Resistance Junction to Case VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) RFP10N15 Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time VSD trr TEST CONDITIONS NOTES: 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% 3. Repetitive rating: pulse width is limited by maximum junction temperature. 2 RFP10N15 1.2 12 1.0 10 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 8 6 4 2 0.2 0 0 50 100 0 25 150 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 20 100 TC = 25oC PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 25oC ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 75 100 125 TC, CASE TEMPERATURE (oC) ID MAX CONTINUOUS 10 DC OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 1 VGS = 8V 15 VGS = 20V VGS = 7V VGS = 10V 10 VGS = 6V 5 VGS = 5V VGS = 4V 0.1 0 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 0 1000 20 0.7 VDS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% -40oC 15 8 9 FIGURE 4. SATURATION CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 6 7 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 25oC 125oC 10 5 125oC VGS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 0.6 125oC 0.5 0.4 25oC 0.3 -40oC 0.2 0.1 -40oC 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 3 10 0 0 2 4 6 10 8 12 ID, DRAIN CURRENT (A) 14 16 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT RFP10N15 Typical Performance Curves (Continued) 2.0 1.4 1.5 1.3 VGS = 10V NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs ID = 5A 1.0 0.5 1.2 1.1 1.0 0.9 0.8 0.7 50 100 0 TJ, JUNCTION TEMPERATURE (oC) 150 -50 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 800 CISS 600 400 COSS 200 CRSS VDS, DRAIN TO SOURCE VOLTAGE (V) 150 1000 112.5 10 20 30 40 VDD = BVDSS 75 GATE SOURCE VDD = BVDSS VOLTAGE RL = 15Ω IG(REF) = 1mA VGS = 10V 8 6 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS 37.5 4 2 DRAIN SOURCE VOLTAGE 0 0 0 10 50 VGS, GATE TO SOURCE VOLTAGE (V) 0 -50 C, CAPACITANCE (pF) ID = 250µA VDS = VGS 0 20 IG(REF) VDS, DRAIN TO SOURCE VOLTAGE (V) IG(ACT) t, TIME (µs) 80 IG(REF) IG(ACT) NOTE: Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 4 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS RFP10N15 Test Circuits and Waveforms (Continued) VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 0.2µF VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 13. GATE CHARGE TEST CIRCUIT IG(REF) 0 FIGURE 14. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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