VS-GB50LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A FEATURES • • • • • High short circuit capability, self limiting to 6 x IC 10 μs short circuit capability Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology • VCE(on) with positive temperature coefficient • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 INT-A-PAK TYPICAL APPLICATIONS PRODUCT SUMMARY • AC inverter drives • Switching mode power supplies • Electronic welders VCES 1200 V IC at TC = 80 °C 50 A VCE(on) (typical) at IC = 50 A, 25 °C 1.7 V Speed 8 kHz to 30 kHz DESCRIPTION Package INT-A-PAK Circuit Chopper low side switch Vishay’s IGBT power module provides ultralow conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current TC = 25 °C IC ICM (1) Diode continuous forward current IF UNITS V 100 TC = 80 °C 50 tp = 1 ms 100 A 50 Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C 446 W Short circuit withstand time tSC TJ = 125 °C 10 μs I2t-value, diode I2t VR = 0 V, t = 10 ms, TJ = 125 °C 420 A2s f = 50 Hz, t = 1 min 2500 V RMS isolation voltage 100 VISOL Note (1) Repetitive rating: pulse width limited by maximum junction temperature IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Collector to emitter breakdown voltage V(BR)CES TJ = 25 °C 1200 - - Collector to emitter saturation voltage VCE(on) Gate to emitter threshold voltage VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.70 - VGE = 15 V, IC = 50 A, TJ = 125 °C - 1.95 - UNITS V VGE(th) VCE = VGE, IC = 2 mA, TJ = 25 °C 5.0 6.2 7.0 Zero gate voltage collector current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 1.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA Revision: 10-Jun-15 Document Number: 93418 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50LP120N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER SYMBOL Turn-on delay time Rise time Turn-off delay time MIN. TYP. td(on) - 220 - tr - 60 - - 420 - td(off) Fall time tf TEST CONDITIONS VCC = 600 V, IC = 50 A, Rg = 18 , VGE = ± 15 V, TJ = 25 °C MAX. - 60 - Turn-on switching loss Eon - 2.1 - Turn-off switching loss Eoff - 2.6 - Turn-on delay time td(on) - 270 - tr - 60 - - 500 - Rise time Turn-off delay time td(off) Fall time tf VCC = 600 V, IC = 50 A, Rg = 18 , VGE = ± 15 V, TJ = 125 °C - 65 - Turn-on switching loss Eon - 4.1 - Turn-off switching loss Eoff - 4.7 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V - 4.29 - - 0.30 - - 0.20 - - 270 - UNITS ns mJ ns mJ nF A Internal gate resistance Rgint - 10 - Stray inductance LCE - - 30 nH - 0.75 - m UNITS Module lead resistance, terminal to chip RCC’+EE’ TC = 25 °C DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery time trr Diode peak reverse recovery current IRM Diode reverse recovery energy Erec TEST CONDITIONS IF = 50 A IF = 50 A, VR = 600 V, dI/dt = -2100 A/μs, VGE = -15 V MIN. TYP. MAX. TJ = 25 °C - 2.15 - TJ = 125 °C - 2.35 - TJ = 25 °C - 90 - TJ = 125 °C - 130 - TJ = 25 °C - 52 - TJ = 125 °C - 60 - TJ = 25 °C - 1.9 - TJ = 125 °C - 4.0 - V ns A mJ THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range Junction to case per ½ module Case to sink Mounting torque Weight IGBT Diode MIN. TYP. MAX. TJ TEST CONDITIONS -40 - 150 TStg -40 - 125 - - 0.28 - - 0.65 - 0.05 - RthJC RthCS Conductive grease applied Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 150 UNITS °C K/W Nm g Revision: 10-Jun-15 Document Number: 93418 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50LP120N www.vishay.com Vishay Semiconductors 10 171 9 142.5 8 IC (A) 85.5 TJ = 125 °C 57 Eon 7 Eon, Eoff (mJ) TJ = 25 °C 114 6 5 Eoff 4 3 2 28.5 1 0 0 0 1 2 3 4 VCE (V) 93418_01 0 10 20 Fig. 1 - Typical Output Characteristics VGE = 15 V 30 40 50 60 Rg (Ω) 93418_04 Fig. 4 - Switching Loss vs. Gate Resistance TJ = 125 °C, VCC = 600 V, VGE = ± 15 V, IC = 50 A 171 20 142.5 15 VGE (V) IC (A) 114 85.5 TJ = 125 °C 57 28.5 VCC = 600 V VCC = 900 V 10 5 TJ = 25 °C 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 0 VGE (V) 93418_02 Fig. 2 - Typical Transfer Characteristics VCE = 20 V 0.1 0.2 0.3 0.4 0.5 0.6 Qg (μC) 93418_05 Fig. 5 - Gate Charge Characteristics IC = 50 A, TJ = 25 °C 10 10 9 Cies 7 Eoff 6 5 C (nF) Eon, Eoff (mJ) 8 Eon 4 1 Coes 3 2 Cres 1 0 0 93418_03 10 20 30 40 50 60 70 80 90 100 0.1 0 IC (A) Fig. 3 - Switching Loss vs. Collector Current TJ = 125 °C, VCC = 600 V, VGE = ± 15 V, Rg = 18 93418_06 5 10 15 20 25 30 35 VCE (V) Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage Revision: 10-Jun-15 Document Number: 93418 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50LP120N www.vishay.com Vishay Semiconductors 1000 1000 td(off) td(off) td(on) 100 t (ns) t (ns) td(on) tr tr 100 tf tf 10 10 0 20 40 60 80 100 120 0 IC (A) 93418_07 10 20 Fig. 7 - Typical Switching Time vs. IC TJ = 125 °C, VCC = 600 V, VGE = ± 15 V, Rg = 18 30 40 50 60 Rg (Ω) 93418_08 Fig. 8 - Typical Switching Time vs. Gate Resistance TJ = 125 °C, VCC = 600 V, VGE = ± 15 V, IC = 50 A 100 90 80 25 °C 70 125 °C IF (A) 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF (V) 93418_09 Fig. 9 - Typical Forward Characteristics (Diode) 1 Diode IGBT ZthJC (K/W) 0.1 0.01 0.001 0.0001 0.00001 93418_10 0.0001 0.001 0.01 0.1 1 tp (s) Fig. 10 - Transient Thermal Impedance Revision: 10-Jun-15 Document Number: 93418 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50LP120N www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION 6 7 1 2 3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95524 Revision: 10-Jun-15 Document Number: 93418 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK DIMENSIONS in millimeters (inches) Revision: 06-Aug-12 Document Number: 95524 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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