VS-GB100LP120N Datasheet

VS-GB100LP120N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
Chopper in 1 Package, 1200 V and 100 A
FEATURES
• High short circuit capability, self limiting to 6 x IC
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
TYPICAL APPLICATIONS
VCES
1200 V
IC at TC = 80 °C
100 A
VCE(on) (typical)
at IC = 100 A, 25 °C
1.8 V
Speed
8 kHz to 30 kHz
Package
INT-A-PAK
Circuit
Chopper low side switch
• AC inverter drives
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
IC
ICM (1)
TC = 25 °C
UNITS
V
200
TC = 80 °C
100
tp = 1 ms
200
A
Diode continuous forward current
IF
Diode maximum forward current
IFM
Maximum power dissipation
PD
TJ = 150 °C
658
W
Short circuit withstand time
tSC
TJ = 125 °C
10
μs
f = 50 Hz, t = 1 min
2500
V
VR= 0 V, t = 10 ms, TJ = 125 °C
1700
A2s
-40 to +150
°C
RMS isolation voltage
VISOL
I2t-value, diode
I2t
Operating junction temperature range
TJ
100
200
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 10-Jun-15
Document Number: 94808
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100LP120N
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 100 A, TJ = 25 °C
-
1.8
-
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
2.0
-
5.0
6.1
7.0
UNITS
Collector to emitter voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 2 mA, TJ = 25 °C
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
1.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
95
-
tr
-
38
-
-
360
-
td(off)
tf
TEST CONDITIONS
VCC = 600 V, IC = 100 A, Rg = 3 ,
VGE = ± 15 V, TJ = 25 °C
-
45
-
Turn-on switching loss
Eon
-
6.5
-
Turn-off switching loss
Eoff
-
5.7
-
Turn-on delay time
td(on)
-
110
-
tr
-
45
-
-
420
-
-
60
-
Rise time
Turn-off delay time
Fall time
td(off)
tf
VCC = 600 V, IC = 100 A, Rg = 3 ,
VGE = ± 15 V, TJ = 125 °C
Turn-on switching loss
Eon
-
9.8
-
Turn-off switching loss
Eoff
-
8.7
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
ISC
VGE = 0 V, VCE = 25 V, f = 1.0 MHz
tsc  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 900 V, VCEM  1200 V
Rgint
LCE
RCC’+EE’
TC = 25 °C
ns
mJ
ns
mJ
-
7.43
-
-
0.52
-
-
0.34
-
-
470
-
A
-
2
-

-
-
30
nH
-
0.75
-
m
MIN.
TYP.
MAX.
UNITS
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
Erec
TEST CONDITIONS
IF = 100 A
IF = 100 A, VR = 600 V,
dIF/dt = -3600 A/μs,
VGE = -15 V
TJ = 25 °C
-
2.0
2.3
TJ = 125 °C
-
2.2
2.5
TJ = 25 °C
-
10
-
TJ = 125 °C
-
16
-
TJ = 25 °C
-
90
-
TJ = 125 °C
-
120
-
TJ = 25 °C
-
3.5
-
TJ = 125 °C
-
6.0
-
V
μC
A
mJ
Revision: 10-Jun-15
Document Number: 94808
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100LP120N
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
IGBT (per 1/2 module)
Junction to case
MIN.
TYP.
MAX.
TJ
TEST CONDITIONS
-40
-
150
TSTG
-40
-
125
RthJC
Diode (per 1/2 module)
Case to sink
RthCS
Conductive grease applied
Mounting torque
-
-
0.19
-
-
0.28
-
0.05
-
Power terminal screw: M5
2.5 to 5.0
Mounting screw: M6
3.0 to 6.0
Weight of module
250
80
25 °C
200
IC (A)
E on, Eoff (mJ)
100
125 °C
150
100
K/W
g
VCC = 600 V
Rg = 3 Ω
VGE = ± 15 V
TJ = 125 °C
Eon
60
40
20
50
°C
Nm
150
300
UNITS
Eoff
VGE = 15 V
0
0
0
1
2
3
4
0
5
100
150
200
250
300
VCE (V)
IC (A)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Switching Loss vs. Collector Current
200
25
VCC = 600 V
IC = 100 A
VGE = ± 15 V
TJ = 125 °C
VCE = 20 V
20
120
E on, Eoff (mJ)
160
IC (A)
50
125 °C
80
Eon
15
Eoff
10
25 °C
40
5
0
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13
VGE (V)
Fig. 2 - Typical Transfer Characteristics
0
10
20
30
Rg (Ω)
Fig. 4 - Switching Loss vs. Gate Resistor
Revision: 10-Jun-15
Document Number: 94808
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100LP120N
www.vishay.com
Vishay Semiconductors
20
103
VCC = 600 V
td(off)
10
t (ns)
VGE (V)
15
td(on)
102
tr
tf
5
VCC = 600 V
Rg = 3 Ω
VGE = ± 15 V
TJ = 125 °C
IC = 100 A
TJ = 25 °C
0
0
0.2
0.4
0.6
0.8
101
1
0
Qg (μC)
101
104
150
200
250
VCC = 600 V
IC = 100 A
VGE = ± 15 V
TJ = 125 °C
Cies
103
td(off)
102
td(on)
tr
t (ns)
C (nF)
100
IC (A)
Fig. 7 - Typical Switching Time vs. IC
Fig. 5 - Gate Charge Characteristics
Coes
100
50
Cres
tf
10-1
101
0
5
10
15
20
25
30
35
0
10
20
30
Rg (Ω)
Fig. 8 - Typical Switching Time vs. Gate Resistance Rg
VCE (V)
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
200
150
IF (A)
25 °C
100
125 °C
50
0
0
1
2
3
4
VF (V)
Fig. 9 - Diode Typical Forward Characteristics
Revision: 10-Jun-15
Document Number: 94808
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100LP120N
www.vishay.com
Vishay Semiconductors
100
Diode
ZthJC (K/W)
10-1
IGBT
10-2
10-3
10-4
10-5
10-4
10-2
10-3
10-1
100
tp (s)
Fig. 10 - Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
Revision: 10-Jun-15
Document Number: 94808
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
INT-A-PAK
DIMENSIONS in millimeters (inches)
Revision: 06-Aug-12
Document Number: 95524
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000