VS-GB300LH120N Datasheet

VS-GB300LH120N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
Chopper in 1 Package, 1200 V and 300 A
FEATURES
• Low VCE(on) SPT + IGBT technology
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
Double INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
TYPICAL APPLICATIONS
VCES
1200 V
• Inverter for motor drive
IC at TC = 80 °C
300 A
• AC and DC servo drive amplifier
VCE(on) (typical)
at IC = 300 A, 25 °C
2.0 V
• Uninterruptible power supply (UPS)
Speed
8 kHz to 30 kHz
Package
Double INT-A-PAK
Circuit
Chopper low side switch
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
IC
ICM (1)
UNITS
V
TC = 25 °C
500
TC = 80 °C
300
tp = 1 ms
600
TC = 80 °C
300
A
Diode continuous forward current
IF
Diode maximum forward current
IFM
tp = 1 ms
600
Maximum power dissipation
PD
TJ = 150 °C
1645
W
Short circuit withstand time
tSC
TJ = 125 °C
10
μs
2500
V
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 12-Jun-15
Document Number: 94784
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB300LH120N
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
Collector to emitter voltage
VCE(on)
Gate to emitter threshold voltage
VGE(th)
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 300 A, TJ = 25 °C
-
2.0
-
VGE = 15 V, IC = 300 A, TJ = 125 °C
-
2.2
-
VCE = VGE, IC = 12.0 mA, TJ = 25 °C
5.0
6.2
7.0
UNITS
V
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
574
-
tr
-
133
-
-
563
-
td(off)
TEST CONDITIONS
VCC = 600 V, IC = 300 A, Rg = 4.7 ,
VGE = ± 15 V, TJ = 25 °C
-
120
-
Turn-on switching loss
Eon
-
23.9
-
Turn-off switching loss
Eoff
-
25.3
-
Turn-on delay time
td(on)
-
604
-
tr
-
137
-
-
629
-
Fall time
Rise time
Turn-off delay time
Fall time
tf
td(off)
tf
VCC = 600 V, IC = 300 A, Rg = 4.7 ,
VGE = ± 15 V, TJ = 125 °C
-
167
-
Turn-on switching loss
Eon
-
31.5
-
Turn-off switching loss
Eoff
-
35.9
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
ISC
Internal gate resistance
Rg
Stray inductance
Module lead resistance, terminal to chip
VGE = 0 V, VCE = 25 V, f = 1.0 MHz
tsc  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 900 V, VCEM  1200 V
LCE
RCC’+EE’
TC = 25 °C
ns
mJ
ns
mJ
-
21.2
-
-
1.42
-
-
0.94
-
-
1800
-
A
-
1.0
-

-
-
20
nH
-
0.35
-
m
UNITS
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
Erec
TEST CONDITIONS
IF = 300 A
IF = 300 A, VR = 600 V,
dIF/dt = -2360 A/μs,
VGE = -15 V
MIN.
TYP.
MAX.
TJ = 25 °C
-
1.82
2.25
TJ = 125 °C
-
1.95
-
TJ = 25 °C
-
20.2
-
TJ = 125 °C
-
40.1
-
TJ = 25 °C
-
170
-
TJ = 125 °C
-
250
-
TJ = 25 °C
-
8.2
-
TJ = 125 °C
-
21.7
-
V
μC
A
mJ
Revision: 12-Jun-15
Document Number: 94784
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB300LH120N
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
TJ
-
-
150
TSTG
-40
-
125
-
-
0.076
-
-
0.100
-
0.035
-
Operating junction temperature
Storage temperature range
TEST CONDITIONS
°C
IGBT
Junction to case
Diode
Case to sink
RthJC
Conductive grease applied
RthCS
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 5.0
Mounting torque
K/W
Nm
Weight
300
g
100
600
VGE = 15 V
VCC = 600 V
Rg = 4.7 Ω
TJ = 125 °C
VGE = ± 15 V
90
500
80
25 °C
70
Eon, Eoff (mJ)
400
IC (A)
UNITS
300
125 °C
200
60
50
40
Eoff
30
Eon
20
100
10
0
0
0
0.5
1
1.5
2.5
2
3
3.5
0
4
200
300
400
500
IC (A)
Fig. 1 - IGBT Typical Output Characteristics
Fig. 3 - IGBT Switching Loss vs. IC
600
250
600
VCE = 20 V
500
VCC = 600 V
IC = 300 A
VGE = ± 15 V
TJ = 125 °C
Eon, Eoff (mJ)
200
400
IC (A)
100
VCE (V)
300
200
150
Eon
100
Eoff
125 °C
50
100
25 °C
0
0
6
7
8
9
10
11
12
13
0
10
20
30
40
VGE (V)
Rg (Ω)
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 4 - IGBT Switching Loss vs. Rg
50
Revision: 12-Jun-15
Document Number: 94784
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB300LH120N
www.vishay.com
Vishay Semiconductors
700
600
IC, Module
500
IC (A)
400
300
200
Rg = 4.7 Ω
VGE = ± 15 V
100
TJ = 125 °C
0
0
300
600
900
1200
1500
VCE (V)
Fig. 5 - RBSOA
10-1
ZthJC (K/W)
IGBT
10-2
10-3
10-3
10-2
10-1
100
101
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
40
600
35
500
25 °C
30
E (mJ)
IF (A)
400
125 °C
300
25
Erec
20
15
200
VCC = 600 V
Rg = 4.7 Ω
VGE = - 15 V
TJ = 125 °C
10
100
5
0
0
0
0.5
1
1.5
2
2.5
3
0
100
200
300
400
500
VF (V)
IF (A)
Fig. 7 - Diode Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. IF
600
Revision: 12-Jun-15
Document Number: 94784
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB300LH120N
www.vishay.com
Vishay Semiconductors
25
E (mJ)
20
15
Erec
10
VCC = 600 V
IC = 300 A
VGE = - 15 V
5
TJ = 125 °C
0
0
10
20
30
40
50
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Rg
ZthJC (K/W)
100
10-1
Diode
10-2
10-3
10-3
10-2
10-1
10-0
10-1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
Revision: 12-Jun-15
Document Number: 94784
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
26
23 ± 0.3
6
7.2 ± 0.6
31 ± 0.5
2.8 x 0.5
16
3-M6
30.5 ± 0.5
Mounting depth max. 11
Ø
6.
4
±
28 ± 0.3
28 ± 0.3
20.1
0.
2
6
22
35.4
27 ± 0.4
3
15 ± 0.4
2
30
48 ± 0.4
61.4
1
6
93 ± 0.4
106.4
Revision: 27-May-13
Document Number: 95525
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000