Transistors 2SC5295 Silicon NPN epitaxial planer type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 1° 3 5° Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current IC 65 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.45±0.1 Rating 0 to 0.1 Symbol 0.75±0.15 ■ Absolute Maximum Ratings Ta = 25°C Parameter 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High transition frequency fT • Low collector output capacitance Cob • SS-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 0.2±0.1 0.8±0.1 1.6±0.15 ■ Features 1: Base 2: Emitter 3: Collector EIAJ: SC-75 SS-Mini Type Package (3-pin) Marking Symbol: 3S ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 10 V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 1 V, IC = 0 1 µA hFE VCE = 8 V, IC = 20 mA 50 fT VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7.0 Forward current transfer ratio * Transition frequency Collector output capacitance Cob | S21e | 2 Forward transfer gain VCB = 10 V, IE = 0, f = 1 MHz VCE = 8 V, IC = 15 mA, f = 1.5 GHz 300 8.5 0.6 7 GHz 1.0 9 Power gain GUM VCE = 8 V, IC = 15 mA, f = 1.5 GHz 10 Noise figure NF VCE = 8 V, IC = 7 mA, f = 1.5 GHz 2.2 pF dB dB 3.0 dB Note) *: Rank classification Rank Q R S hFE 50 to 120 100 to 170 150 to 300 1