New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7.8 nC APPLICATIONS SO-8 S1 G1 S2 G2 8 D1 2 7 D1 3 6 D2 4 5 D2 1 • Synchronous Buck Converter • DC/DC Converter D1 D2 G1 G2 Top View Ordering Information: Si4228DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ± 12 TC = 70 °C 8e ID TA = 25 °C 8 IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy 2.6 IS 1.7b, c IAS 15 EAS 11.25 TA = 25 °C TC = 25 °C 2 PD TA = 25 °C 2 W b, c 1.3b, c TA = 70 °C Operating Junction and Storage Temperature Range mJ 3.1 TC = 70 °C Maximum Power Dissipation A 50 TC = 25 °C L = 0.1 mH b, c, e 6.9b, c TA = 70 °C Pulsed Drain Current V 8e TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t ≤ 10 s RthJA 52 62.5 Steady State RthJF 30 40 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W. e. Package limited. Document Number: 66591 S10-1043-Rev. A, 03-May-10 www.vishay.com 1 New Product Si4228DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 25 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient ID = 250 µA VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 20 mV/°C - 3.2 1.4 V VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 0.6 20 µA A VGS = 10 V, ID = 7 A 0.015 0.018 VGS = 4.5 V, ID = 7 A 0.016 0.020 VGS = 2.5 V, ID = 5 A 0.020 0.024 VDS = 15 V, ID = 7 A 68 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 790 VDS = 12.5 V, VGS = 0 V, f = 1 MHz pF 76 VDS = 12.5 V, VGS = 10 V, ID = 8.6 A VDS = 12.5 V, VGS = 4.5 V, ID = 8.6 A 16.5 25 7.8 12 1.6 VDD = 12.5 V, RL = 1.8 Ω ID ≅ 6.9 A, VGEN = 4.5 V, Rg = 1 Ω 0.5 2.5 5 7 14 12 18 21 30 tf 10 20 td(on) 4 8 9 18 20 30 7 14 td(off) tr td(off) nC 1.7 f = 1 MHz td(on) tr 146 VDD = 12.5 V, RL = 1.8 Ω ID ≅ 6.9 A, VGEN = 10 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 2.6 50 IS = 6.9 A IF = 6.9 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.82 1.2 V 15 23 ns 6 12 nC 8 7 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 66591 S10-1043-Rev. A, 03-May-10 New Product Si4228DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 5 V GS = 10 V thru 3 V 4 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 V GS = 2 V 3 T C = 25 °C 2 10 T C = 125 °C 1 V GS = 1 V 0 0.0 0.3 0.6 0.9 1.2 T C = - 55 °C 0 0.0 1.5 0.5 V DS - Drain-to-Source Voltage (V) 1200 0.024 900 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.0 Transfer Characteristics 0.030 V GS = 2.5 V V GS = 4.5 V V GS = 10 V 0.012 1.5 V GS - Gate-to-Source Voltage (V) Output Characteristics 0.018 1.0 Ciss 600 300 Coss Crss 0.006 0 0 10 20 30 40 50 0 5 15 20 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.5 10 ID = 8.6 A V GS = 10 V ID = 8.6 A 8 V DS = 6 V 6 V DS = 12.5 V V DS = 20 V 4 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 V GS = 4.5 V 1.1 0.9 2 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 66591 S10-1043-Rev. A, 03-May-10 15 18 0.7 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4228DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.04 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 8.6 A T J = 150 °C 10 T J = 25 °C 1 0.03 T J = 125 °C 0.02 T J = 25 °C 0.01 T J = - 50 °C 0.1 0.00 0 0.3 0.6 0.9 0 1.2 2 V SD - Source-to-Drain Voltage (V) 4 6 8 10 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.2 50 40 1.0 Power (W) VGS(th) (V) ID = 250 μA 0.8 30 20 0.6 10 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) T J - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* 100 μs I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 66591 S10-1043-Rev. A, 03-May-10 New Product Si4228DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted I D - Drain Current (A) 12 9 Package Limited 6 3 0 0 25 50 75 100 125 150 0 25 T C - Case Temperature (°C) Current Derating* 1.5 4 1.2 Power (W) Power (W) 3 2 0.9 0.6 1 0.3 0.0 0 0 25 50 75 100 125 150 50 75 100 125 T C - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66591 S10-1043-Rev. A, 03-May-10 www.vishay.com 5 New Product Si4228DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66591. www.vishay.com 6 Document Number: 66591 S10-1043-Rev. A, 03-May-10 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000