Si4946BEY Datasheet

Si4946BEY
Vishay Siliconix
Dual N-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
ID (A)
0.041 at VGS = 10 V
6.5
0.052 at VGS = 4.5 V
5.8
Qg (Typ.)
9.2 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 175 °C Maximum Junction Temperature
• 100 % Rg Tested
• Compliant to RoHS directive 2002/95/EC
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
D1
D2
G1
G2
Top View
Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free)
Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
5.5
ID
5.3a, b
4.4a, b
IDM
Continuous Source Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0 1 mH
TC = 70 °C
TA = 25 °C
3.1
IS
2a, b
IAS
12
EAS
7.2
mJ
3.7
2.6
PD
W
2.4a, b
1.7a, b
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
30
TC = 25 °C
Maximum Power Dissipation
V
6.5
TA = 70 °C
Pulsed Drain Current
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Maximum Junction-to-Foot (Drain)
Symbol
Typical
Maximum
t ≤ 10 s
RthJA
50
62.5
Steady State
RthJF
33
41
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
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1
Si4946BEY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
60
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
1
µA
A
0.033
0.041
VGS = 4.5 V, ID = 4.7 A
0.041
0.052
VDS = 15 V, ID = 5.3 A
24
Ω
S
VDS = 30 V, VGS = 0 V, f = 1 MHz
71
VDS = 30 V, VGS = 10 V, ID = 5.3 A
17
25
9.2
12
pF
3.3
nC
3.7
VDD = 30 V, RL = 6.8 Ω
ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω
3.1
6.5
9.5
20
30
120
180
20
30
tf
30
45
td(on)
10
15
VDD = 30 V, RL = 6.8 Ω
ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
30
VGS = 10 V, ID = 5.3 A
f = 1 MHz
td(off)
Turn-Off Delay Time
V
nA
10
VDS = 30 V, VGS = 5 V, ID = 5.3 A
tr
Rise Time
3.0
± 100
44
td(off)
Fall Time
2.4
840
tr
Turn-Off Delay Time
1.0
VDS = 60 V, VGS = 0 V
td(on)
Turn-On Delay Time
Rise Time
mV/°C
- 6.7
VDS = 60 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
RDS(on)
V
53
12
20
25
40
10
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
TC = 25 °C
IS
3.1
ISM
30
IS = 2 A
VSD
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
25
50
ns
Body Diode Reverse Recovery Charge
Qrr
25
50
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C
18
7
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
10
VGS = 10 V thru 5 V
8
ID - Drain Current (A)
I D - Drain Current (A)
25
20
4V
15
10
6
4
TC = 150 °C
25 °C
2
5
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
- 55 °C
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.100
1200
1000
0.080
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (mΩ)
1.0
0.060
VGS = 4.5 V
0.040
800
600
400
VGS = 10 V
0.020
200
0.000
Coss
Crss
0
0
5
10
15
20
25
30
0
10
ID - Drain Current (A)
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.2
10
8
VDS = 30 V
6
VDS = 48 V
4
1.8
VGS = 10 V
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 5.3 A
2.0
ID = 5.3 A
1.6
1.4
VGS = 4.5 V
1.2
1.0
2
0.8
0
0
4
8
12
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
R DS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
30
TJ = 175 °C
10
TJ = 25 °C
ID = 5.3 A
0.08
TJ = 150 °C
0.06
0.04
TJ = 25 °C
0.02
0.00
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.0
25
2.8
20
2.6
ID = 250 µA
Power (W)
VGS(th) (V)
2.4
2.2
2.0
15
10
1.8
1.6
5
1.4
1.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
175
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I D - Drain Current (A)
10
Limited by RDS(on)*
100 µs
1 ms
1
10 ms
100 ms
0.1
0.01
0.01
TA = 25 °C
Single Pulse
0.1
1
1s
10 s
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Si4946BEY
Vishay Siliconix
8
4.0
7
3.5
6
3.0
5
2.5
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
2.0
3
1.5
2
1.0
1
0.5
0.0
0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
I C - Peak Avalanche Current (A)
100
10
TA =
L · ID
BV - V DD
1
0.000001
0.00001
0.0001
0.001
TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
5
Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Single Pulse
0.02
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73411.
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Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000