Si5853DDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.7 nC APPLICATIONS SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 20 0.46 at 0.5 A 1 • Charging Switch for Portable Devices - With Integrated Low Vf Trench Schottky Diode 1206-8 ChipFET® 1 A K S K D A A K S D Marking Code G JH G XX Lot Traceability and Date Code D Part # Code Bottom View Ordering Information: Si5853DDC-T1-E3 (Lead (Pb)-free) Si5853DDC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Symbol VDS VKA VGS Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (MOSFET) IDM Continuous Source Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Document Number: 68979 S10-0548-Rev. B, 08-Mar-10 ID Temperature)d, e IS IF IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit - 20 20 ±8 Unit V - 4a - 3.5 - 2.9b, c - 2.3b, c - 10 - 2.6 A - 1.1b, c 1 3 3.1 2 1.3b, c 0.8b, c 2.5 1.6 1.2 0.76 - 55 to 150 260 W °C www.vishay.com 1 Si5853DDC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum RthJA 77 95 Maximum Junction-to-Foot (Drain) (MOSFET) RthJF 33 40 Maximum Junction-to-Ambient (Schottky)b, c, g RthJA 85 105 Maximum Junction-to-Foot (Drain) (Schottky) RthJF 40 50 Maximum Junction-to-Ambient (MOSFET)b, c, f Unit °C/W Notes: a. Package limited. b. Surface mounted on FR4 board. c. t ≤ 5 s. d. See Solder Profile (www.vishay.com/doc?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f .Maximum under steady state conditions for MOSFETs is 130 °C/W. g. Maximum under steady state conditions for Schottky is 125 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V - 13 ID = - 250 µA mV/°C 2.4 VGS(th) VDS = VGS, ID = - 250 µA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 4.5 V - 0.4 - 10 µA A VGS = - 4.5 V, ID = - 2.9 A 0.085 0.105 VGS = - 2.5 V, ID = - 2.5 A 0.117 0.143 VGS = - 1.8 V, ID = - 1.5 A 0.155 0.188 VDS = - 10 V, ID = - 2.9 A 7 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 320 VDS = - 10 V, VGS = 0 V, f = 1 MHz 60 VDS = - 10 V, VGS = - 8 V, ID = - 2.9 A 7.9 12 4.7 7.1 47 VDS = - 10 V, VGS = - 4.5 V, ID = - 2.9 A tr 0.65 15 VDD = - 10 V, RL = 4.4 Ω ID ≅ - 2.3 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 6.5 25 17 30 21 30 tf 10 15 td(on) 5 10 10 15 20 30 10 15 tr td(off) tf nC 1.35 f = 1 MHz td(on) td(off) pF VDD = - 10 V, RL = 4.4 Ω ID ≅ - 2.3 A, VGEN = - 8 V, Rg = 1 Ω ns Document Number: 68979 S10-0548-Rev. B, 08-Mar-10 Si5853DDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 2.6 - 10 IS = - 2.3 A, VGS = 0 V IF = - 2.3 A dI/dt = 100 A/µs TJ = 25 °C A - 0.85 - 1.2 V 15 30 ns 9 20 nC 10 ns 5 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Conditions Typ. Max. IF = 0.5 A Min. 0.381 0.46 IF = 1 A 0.468 0.560 IF = 1 A, TJ = 125 °C 0.44 0.53 Vr = 5 V 0.0081 0.080 Vr = 5 V, TJ = 85 °C 0.4 4 Vr = 5 V, TJ = 125 °C 2.8 28 Vr = 20 V 0.0093 0.09 Vr = 20 V, TJ = 85 °C 0.45 4.5 Vr = 20 V, TJ = 125 °C 3.2 32 Vr = 10 V 30 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68979 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 3 Si5853DDC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 10 VGS = 5 V thru 2.5 V 3 VGS = 2 V I D - Drain Current (A) I D - Drain Current (A) 8 6 4 VGS = 1.5 V 2 TC = 25 °C 1 2 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0.0 0 0 1 2 3 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 2.0 700 600 0.25 VGS = 1.8 V 500 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.4 0.20 0.15 VGS = 2.5 V 0.10 400 Ciss 300 200 Coss VGS = 4.5 V 0.05 100 Crss 0.00 0 0 2 4 6 8 10 0 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 1.5 ID = 2.9 A 1.4 VDS = 10 V 4 VDS = 16 V 2 1.3 (Normalized) 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 ID = 2.9 A VGS = 4.5 V, 2.5 V, 1.8 V 1.2 1.1 1.0 0.9 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 8 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68979 S10-0548-Rev. B, 08-Mar-10 Si5853DDC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.9 A 10 TJ = 150 °C 0.3 0.2 TJ = 125 °C 0.1 TJ = 25 °C TJ = 25 °C 0.0 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 16 0.8 12 Power (W) VGS(th) (V) 0.7 ID = 250 µA 0.6 8 0.5 4 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 1 ms 10 ms 0.1 100 ms 10 s, 1 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68979 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 5 Si5853DDC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 5 4 Power (W) I D - Drain Current (A) 3 Package Limited 3 2 2 1 1 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68979 S10-0548-Rev. B, 08-Mar-10 Si5853DDC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 68979 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 7 Si5853DDC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 1 IF - Forward Current (A) IR - Reverse Current (mA) 10 I R = 20 V 0.1 IR = 5 V TJ = 150 °C 0.01 TJ = 25 °C 0.001 0 25 50 75 100 125 0.1 0.0 150 0.1 TJ - Junction Temperature (°C) 0.2 0.3 0.4 0.5 0.6 VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop 180 Junction Capacitance (pF) 150 120 90 60 30 0 0 5 10 15 20 25 30 VKA - Reverse Voltage (V) Capacitance www.vishay.com 8 Document Number: 68979 S10-0548-Rev. B, 08-Mar-10 Si5853DDC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68979. Document Number: 68979 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 9 Package Information Vishay Siliconix 1206-8 ChipFETR 4 L D 8 7 6 5 4 1 S 2 e 3 E1 5 6 7 8 4 3 2 1 E 4 b x c Backside View 2X 0.10/0.13 R C1 A DETAIL X NOTES: 1. All dimensions are in millimeaters. 2. Mold gate burrs shall not exceed 0.13 mm per side. 3. Leadframe to molded body offset is horizontal and vertical shall not exceed 0.08 mm. 4. Dimensions exclusive of mold gate burrs. 5. No mold flash allowed on the top and bottom lead surface. MILLIMETERS Dim A b c c1 D E E1 e L S INCHES Min Nom Max Min Nom Max 1.00 − 1.10 0.039 − 0.043 0.25 0.30 0.35 0.010 0.012 0.014 0.1 0.15 0.20 0.004 0.006 0.008 0 − 0.038 0 − 0.0015 2.95 3.05 3.10 0.116 0.120 0.122 1.825 1.90 1.975 0.072 0.075 0.078 1.55 1.65 1.70 0.061 0.065 0.067 0.65 BSC 0.28 − 0.0256 BSC 0.42 0.011 − 0.55 BSC 0.022 BSC 5_Nom 5_Nom 0.017 ECN: C-03528—Rev. F, 19-Jan-04 DWG: 5547 Document Number: 71151 15-Jan-04 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET® 0.093 0.026 0.016 0.010 (0.650) (0.406) (0.244) 0.036 (0.914) 0.022 (0.559) (2.032) 0.080 (2.357) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 2 Document Number: 72593 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000