Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A Unit: mm 0.15 0.65 max. 14.5±0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 1.0 ● 0.85 ● 0.8 ■ Features 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 3.5±0.1 6.9±0.1 0.7 +0.1 ■ Absolute Maximum Ratings 2.5±0.5 2.5±0.5 +0.1 (Ta=25˚C) 0.45–0.05 0.45–0.05 Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 3 2.5±0.1 1 Parameter Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 1 µA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V * VCE = 10V, IC = 2mA 160 hFE2 VCE = 2V, IC = 100mA 90 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF hFE1 Forward current transfer ratio *h FE1 460 0.3 V Rank classification Rank Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 1 Transistor 2SD1991A PC — Ta IC — VCE 1200 Ta=25˚C 300 200 100 1000 140µA 40 120µA 100µA 30 80µA 60µA 20 800 600 400 40µA 10 200 20µA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 200 Collector current IC (mA) 160 120 25˚C –25˚C 80 40 160 120 80 40 0 0 0.4 0.8 1.2 1.6 2.0 0 Base to emitter voltage VBE (V) 200 400 600 1000 25˚C 300 –25˚C 200 100 0.3 1 3 10 10 3 1 0.3 25˚C 0.1 30 Collector current IC (mA) Ta=75˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 100 100 fT — I E 300 800 600 Ta=125˚C 75˚C 400 25˚C –25˚C 200 0 0.1 30 Collector current IC (mA) VCB=10V Ta=25˚C Transition frequency fT (MHz) Forward current transfer ratio hFE Ta=75˚C 1.0 IC/IB=10 VCE=5V 500 0.8 30 hFE — IC VCE=10V 0 0.1 800 1000 400 0.6 100 Base current IB (µA) hFE — IC 600 0.4 VCE(sat) — IC 240 VCE=10V 0 0.2 Base to emitter voltage VBE (V) IC — I B 200 Ta=75˚C 0 Collector to emitter voltage VCE (V) IC — VBE Collector current IC (mA) Base current IB (µA) 50 400 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C IB=160µA 0 2 IB — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 500 1 10 100 Collector current IC (mA) 1000 240 180 120 60 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 Transistor 2SD1991A Cob — VCB NV — IC 240 10 8 6 4 2 h Parameter — IC 100 VCE=10V Ta=25˚C Function=FLAT 200 VCE=5V f=270Hz 30 160 h Parameter IE=0 f=1MHz Ta=25˚C Noise voltage NV (mV) Collector output capacitance Cob (pF) 12 Rg=100kΩ 120 80 10 1 22kΩ 4.7kΩ 40 hfe (×100) 3 hoe (10–1µS) hre (×10–4) 0.3 hie (×10kΩ) 0 1 3 10 30 100 Collector to base voltage VCB (V) 0 10 30 100 300 Collector current IC (µA) 1000 0.1 0.1 0.3 1 3 10 Collector current IC (mA) 3