ESD5V0S1U-02V Data Sheet (1.1 MB, EN)

TVS Diodes
Transient Voltage Suppressor Diodes
ESD5V0S1U-02V
Uni-directional ESD / Transient Protection Diode
ESD5V0S1U-02V
Data Sheet
Revision 1.1, 2012-05-31
Final
Powermanagement & Multimarket
Edition 2012-05-31
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
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ESD5V0S1U-02V
Revision History: Rev. 1.0, 2011-02-21
Page or Item
Subjects (major changes since previous revision)
Revision 1.1, 2012-05-31
Page 8
Table 3 updated
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
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MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
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Other Trademarks
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development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet
3
Revision 1.1, 2012-05-31
ESD5V0S1U-02V
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
1.1
1.2
Uni-directional ESD / Transient Protection Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
3.1
3.2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical Characteristics at TA=25°C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Typical Performance characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . 8
4
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Ordering information scheme (examples) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
6.1
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
SC79 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7
Date Code Marking for SC79 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
4
Revision 1.1, 2012-05-31
ESD5V0S1U-02V
Uni-directional ESD / Transient Protection Diode
1
Uni-directional ESD / Transient Protection Diode
1.1
Features
•
•
•
•
•
•
ESD / transient protection according to:
– IEC61000-4-2 (ESD): ±25 kV (air) 20 kV (contact)
– IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns)
– IEC61000-4-5 (surge): 5.5 A / 66 W (8/20 μs)
Uni-directional, working voltage: VRWM = 5 V
Ultra low clamping voltage, protects against both positive and negative ESD strikes
Ultra low dynamic resistance: RDYN down to 0.2 Ω
Very fast response time
Pb-free (RoHS compliant) and halogen free package
1.2
•
•
•
Application Examples
Notebooks, computers and consumer electronics
Industrial applications, white goods, portable instrumentation
Mobile communication
2
Product Description
Pin 2
Pin 1
Pin 2
Pin 1
PG-SC79-2-1
a) Pin configuration
b) Schematic diagram
PG-SC79- 2- 1_PinConf_and_SchematicDiag_[1].vsd
Figure 1
Pin configuration and schematic diagram
Table 1
Ordering information
Type
Package
Configuration
Marking code
ESD5V0S1U-02V
SC79
1 line, uni-directional
U
Final Data Sheet
5
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ESD5V0S1U-02V
Characteristics
3
Characteristics
Table 2
Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
-25
–
25
kV
VESD
-20
–
20
kV
IPP
-5.5
–
5.5
A
Peak pulse power (tp = 8/20 μs)2)
PPk
–
–
66
W
Operating temperature range
TOP
-55
–
125
°C
Storage temperature
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5
Tstg
-65
–
150
°C
ESD air discharge
1)
ESD contact discharge
1)
Peak pulse current (tp = 8/20 μs)
2)
Electrical Characteristics at TA=25°C, unless otherwise specified
3.1
IF
I PP
VR
RDYN
IF
VCL
VBR
R DYN:
Differential series resistance
V BR:
Breakdown voltage (IBR=1mA, typical)
V RWM:
Maximum working voltage
V CL:
Clamping voltage
V FC:
Forward clamping voltage
IPP :
Peak pulse current (tp = 8 / 20 µs)
VRWM
VR
IRWM
VF
VFC
VF
IR
RDYN
VF
IPP
VF :
Forward voltage
IF:
Forward current
VR :
Reverse voltage
IR:
Reverse current
IR
Diode_ Characteristic_Curve_Uni-directional .vsd
Figure 2
Definitions of electrical characteristics
Table 3
DC characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Reverse working voltage VRWM
–
–
5
V
Breakdown voltage
VBR
5.7
6.5
7.5
V
IR = 1 mA
Reverse current
IR
–
–
0.1
μA
VR = 3.3 V
Final Data Sheet
6
Revision 1.1, 2012-05-31
ESD5V0S1U-02V
Characteristics
Table 4
RF characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Diode capacitance
CL
–
35
40
pF
VR = 0 V, f = 1 MHz
Diode capacitance
CL
–
20
–
pF
VR = 2.5 V, f = 1 MHz
Unit
Note /
Test Condition
Table 5
ESD characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
VCL
–
7.6
–
V
Ipp = 5 A,
tp = 30 ns, pin 1-2
Clamping voltage1)
VCL
–
10.5
–
V
Ipp = 16 A,
tp = 30 ns, pin 1-2
Clamping voltage1)
VCL
–
14.5
–
V
Ipp = 30 A,
tp = 30 ns, pin 1-2
Forward clamping
voltage1)
VFC
–
2
–
V
Ipp = 5 A,
tp = 30 ns, pin 2-1
Forward clamping
voltage1)
VFC
–
4.3
–
V
Ipp = 16 A,
tp = 30 ns, pin 2-1
Forward clamping
voltage1)
VFC
–
7.3
–
V
Ipp = 30 A,
tp = 30 ns, pin 2-1
RDYN
–
0.2
–
Ω
tp =30 ns, pin 2-1
Dynamic resistance
RDYN
–
0.3
–
1)According TLP tests. Please refer to Application Note AN-210 [1]
Ω
tp =30 ns, pin 1-2
1)
Clamping voltage
Dynamic resistance1)
1)
Final Data Sheet
7
Revision 1.1, 2012-05-31
ESD5V0S1U-02V
Characteristics
3.2
Typical Performance characteristics at TA = 25 °C, unless otherwise specified
40
35
30
CL [pF]
25
20
15
10
5
0
0
Figure 3
1
2
3
VR [V]
4
5
6
Capacitance characteristics: CL = f(VR) - f = 1 MHz
10-6
-7
IR [A]
10
10-8
-9
10
25
50
75
100
125
150
TA [°C]
Figure 4
Reverse characteristics: IR = f(TA) - VR = 3.3 V
Final Data Sheet
8
Revision 1.1, 2012-05-31
ESD5V0S1U-02V
30
50
25
40
20
30
15
RDYN=0.2Ω
20
10
10
5
ESD5V0S1U-02V - Pin 2 to 1
RDYN
0
0
5
10
[kV]
60
Equivalent VIEC
ITLP [A]
Characteristics
0
15
VTLP [V]
30
50
25
40
20
30
15
RDYN=0.3Ω
20
10
10
5
ESD5V0S1U-02V - Pin1 to 2
RDYN
0
0
5
10
15
20
Equivalent VIEC
60
[kV]
Forward TLP characteristics (Pin 2 to 1)
ITLP [A]
Figure 5
0
25
VTLP [V]
Figure 6
Reverse TLP characteristics (Pin 1 to 2)
Final Data Sheet
9
Revision 1.1, 2012-05-31
ESD5V0S1U-02V
Application Information
4
Application Information
Connector
Protected signal line
I /O
ESD sensitive
device
1
The protection diode should be placed
very close to the location where the
ESD can occur to keep loops and
inductances as small as possible .
2
Application _ESD5V0 S1U-02V .vsd
Figure 7
Single Channel, uni-directional ESD / Transient protection
Final Data Sheet
10
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ESD5V0S1U-02V
Ordering information scheme (examples)
5
ESD
Ordering information scheme (examples)
0P1
RF
- XX YY
Package
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
For Radio Frequency Applications
Line Capacitance CL in pF: (i.e.: 0P1 = 0.1pF)
ESD 5V3 U n U - XX YY
Package or Application
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
S = SOT363
U = SC74
XX = Application family:
LC = Low Clamp
HDMI
Uni- / Bi-directional or Rail to Rail protection
Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines)
Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF)
Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V)
Figure 8
Ordering Information Scheme
Final Data Sheet
11
Revision 1.1, 2012-05-31
ESD5V0S1U-02V
Package Information
6
Package Information
6.1
SC79 Package
0.2
M
A
+0.05
0.13 -0.03
0.8 ±0.1
A
1
0.3 ±0.05
0.2 ±0.05
Cathode
marking
1.2 ±0.1
1.6 ±0.1
2
0.55 ±0.04
SC79-PO V02
0.35
SC79: Package outline (dimension in mm)
1.35
Figure 9
0.35
SC79-FP V02
Figure 10
SC79: Footprint (dimension in mm)
Cathode
marking
0.4
0.93
1.96
0.2
8
Reel with 2 mm Pitch
2
1.33
Standard
4
Cathode
marking
0.66
SC79-TP V05
Figure 11
SC79: Packing (dimension in mm)
Figure 12
SC79: Marking (example)
Final Data Sheet
12
Revision 1.1, 2012-05-31
ESD5V0S1U-02V
Date Code Marking for SC79
7
Date Code Marking for SC79
o n e d i g i t ( S C D 8 0 , S C 7 9 , S C 7 5 1) ) C E S - C o d e
Month 2 0 03
2 0 04
2005
2006
2 0 07
2008
2009
2010
2011
2012
2 0 13
2014
01
a
p
A
P
a
p
A
P
a
p
A
P
02
b
q
B
Q
b
q
B
Q
b
q
B
Q
03
c
r
C
R
c
r
C
R
c
r
C
R
04
d
s
D
S
d
s
D
S
d
s
D
S
05
e
t
E
T
e
t
E
T
e
t
E
T
06
f
u
F
U
f
u
F
U
f
u
F
U
07
g
v
G
V
g
v
G
V
g
v
G
V
08
h
x
H
X
h
x
H
X
h
x
H
X
09
j
y
J
Y
j
y
J
Y
j
y
J
Y
10
k
z
K
Z
k
z
K
Z
k
z
K
Z
11
l
2
L
4
l
2
L
4
l
2
L
4
12
n
3
N
5
n
3
N
5
n
3
N
5
Figure 13
Date Code marking for SC79 packages
Final Data Sheet
13
Revision 1.1, 2012-05-31
ESD5V0S1U-02V
References
References
[1]
Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level Using VF-TLP
Characterization Methodology
Final Data Sheet
14
Revision 1.1, 2012-05-31
ESD5V0S1U-02V
Terminology
Terminology
CES
Charactere Encoding Scheme
CL
Line capacitance
EFT
Electrical Fast Transient
ESD
Electrostatic Discharge
Ipp
Peak pulse current
IR
Reverse current
RoHs
Restriction of Hazardous Substance Directive
TA
Ambient Temperature
TOP
Operation temperature
tp
Pulse duration
Tstg
Storage temperature
VCL
Reverse clamping voltage
VESD
Electrostatic discharge voltage
VFC
Forward Clamping Voltage
VR
Reverse voltage
VRWM
Reverse working voltage maximum
VBR
Breakdown voltage
RDYN
Dynamic resistance
Final Data Sheet
15
Revision 1.1, 2012-05-31
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