Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAV20; BAV21
General purpose diodes
Product data sheet
Supersedes data of 1996 Sep 17
1999 May 25
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 150 V, 200 V
• Repetitive peak reverse voltage:
max. 200 V, 250 V
• Repetitive peak forward current:
max. 625 mA.
handbook, halfpage
k
a
MAM246
APPLICATIONS
• General purposes in industrial
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
1999 May 25
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
2
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
repetitive peak reverse voltage
BAV20
−
200
V
BAV21
−
250
V
BAV20
−
150
V
BAV21
−
200
V
−
250
mA
−
625
mA
t = 1 μs
−
9
A
t = 100 μs
−
3
A
t=1s
−
1
A
continuous peak reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
Ptot
total power dissipation
−
400
mW
Tstg
storage temperature
Tamb = 25 °C; note 1
−65
+175
°C
Tj
junction temperature
−
175
°C
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1999 May 25
3
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
MIN.
MAX.
UNIT
see Fig.3
IF = 100 mA
−
1.0
V
IF = 200 mA
−
1.25
V
VR = VRmax
−
100
nA
VR = VRmax; Tj = 150 °C
−
100
μA
see Fig.5
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
5
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured
at IR = 3 mA; see Fig.8
−
50
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
375
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 25
4
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
GRAPHICAL DATA
MBG449
300
MBG459
600
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
400
(1)
(3)
200
100
0
0
0
Tamb (oC)
100
0
200
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
(2)
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG703
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (μs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 25
5
104
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
MGD009
103
handbook, halfpage
MGD005
1.6
handbook, halfpage
IR
(μA)
Cd
(pF)
102
1.4
10
1.2
1
1.0
10−1
10−2
0
100
Tj (oC)
0.8
200
0
10
VR = VRmax.
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
MGL588
300
handbook, halfpage
VR
(V)
(1)
200
(2)
100
0
0
100
Tamb (oC)
200
(1) BAV21.
(2) BAV20.
Fig.7
Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
1999 May 25
6
VR (V)
20
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
handbook, full pagewidth
tr
tp
t
D.U.T.
R = 50 Ω
S
V = VR
IF x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
(1) IR = 3 mA.
Fig.8 Reverse recovery voltage test circuit and waveforms.
1999 May 25
t rr
7
output signal
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
D
G1
L
L
DIMENSIONS (mm are the original dimensions)
UNIT
b
max.
D
max.
G1
max.
L
min.
mm
0.56
1.85
4.25
25.4
0
1
2 mm
scale
Note
1. The marking band indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
EIAJ
SOD27
A24
DO-35
SC-40
1999 May 25
8
EUROPEAN
PROJECTION
ISSUE DATE
97-06-09
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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above those given in the Characteristics sections of this
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 May 25
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
115002/03/pp10
Date of release: 1999 May 25
Document order number: 9397 750 05895
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