Si4936CDY Datasheet

New Product
Si4936CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)d
0.040 at VGS = 10 V
5.8
0.050 at VGS = 4.5 V
5.5
VDS (V)
30
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
Qg (Typ.)
2.8 nC
APPLICATIONS
• Low Current DC/DC Conversion
• Notebook System Power
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
D1
D2
G1
G2
Top View
Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
Limit
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
5.8
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
5.0a, b
4.0a, b
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
IS
TA = 25 °C
1.4a, b
2.3
TC = 70 °C
1.5
PD
TA = 25 °C
W
1.7a, b
1.1a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
20
1.9
TC = 25 °C
Maximum Power Dissipation
V
4.6
ID
TA = 25 °C
Unit
30
TJ, Tstg
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
a, c
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
Typical
Maximum
t ≤ 10 s
58
75
Steady State
RthJF
42
55
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
d. Based on TC = 25 °C.
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
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1
New Product
Si4936CDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
32
mV/°C
-5
1.2
3
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
15
µA
A
VGS = 10 V, ID = 5 A
0.033
0.040
VGS = 4.5 V, ID = 4.7 A
0.041
0.050
VDS = 10 V, ID = 5 A
15
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
325
VDS = 15 V, VGS = 0 V, f = 1 MHz
60
pF
30
VDS = 15 V, VGS = 10 V, ID = 5 A
6
9
2.8
4.2
1.1
VDS = 15 V, VGS = 4.5 V, ID = 5 A
0.8
2.8
f = 1 MHz
5.6
12
18
13
20
16
25
tf
11
17
td(on)
4
8
9
18
11
20
8
15
td(on)
tr
td(off)
tr
td(off)
nC
VDD = 15 V, RL = 3.8 Ω
ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 3.8 Ω
ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω
tf
0.6
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
1.9
20
IS = 4 A, VGS = 0 V
IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
11
20
ns
4
8
nC
6
5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
New Product
Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
VGS = 10 V thru 4 V
4
I D - Drain Current (A)
I D - Drain Current (A)
15
10
VGS = 3 V
5
3
2
TC = 25 °C
1
TC = 125 °C
TC = - 55 °C
VGS = 1 V, 2 V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
400
0.06
300
0.05
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.04
VGS = 10 V
200
0.03
100
0.02
0
Coss
Crss
0
5
10
15
0
20
5
ID - Drain Current (A)
10
15
25
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.7
10
ID = 5 A
VGS = 10 V; ID = 5 A
1.5
6
VDS = 15 V
VDS = 24 V
4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
20
1.3
VGS = 4.5 V;
ID = 4.7 A
1.1
0.9
2
0
0
1
2
3
4
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
5
6
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
10
TJ = 150 °C
0.08
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
100
TJ = 25 °C
1
0.06
TJ = 125 °C
0.04
TJ = 25 °C
0.02
0.1
0.00
0.0
0.3
0.6
0.9
1.2
0
1.5
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.3
20
2.1
16
Power (W)
VGS(th) (V)
1.9
ID = 250 µA
1.7
12
8
1.5
4
1.3
1.1
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
1000
100
I D - Drain Current (A)
Limited by RDS(on)*
10
100 µA
1
1 ms
10 ms
0.1
100 ms
TA = 25 °C
Single Pulse
1s
10 s, DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
New Product
Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
I D - Drain Current (A)
8
6
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
3.0
1.5
2.5
1.2
Power (W)
Power (W)
2.0
1.5
0.9
0.6
1.0
0.3
0.5
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
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New Product
Si4936CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69097.
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Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000