SUP60030E Datasheet

SUP60030E
www.vishay.com
Vishay Siliconix
N-Channel 80 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
80
RDS(on) (Ω) MAX.
ID (A) d
0.0034 at VGS = 10 V
120
0.0036 at VGS = 7.5 V
120
Qg (TYP.)
• TrenchFET® power MOSFET
• Maximum 175 °C junction temperature
• Very low Qgd reduces power loss from passing
through Vplateau
94
• 100 % Rg and UIS tested
TO-220AB
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
D
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
Top View
G
D
S
G
• Motor drive switch
• DC/AC inverter
• Battery management
Ordering Information:
SUP60030E-GE3 (lead (Pb)-free and halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
80
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
Pulsed Drain Current (t = 100 μs)
ID
IDM
Avalanche Current
Single Avalanche Energy a
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation a
TC = 125 °C
Operating Junction and Storage Temperature Range
V
120 d
120 d
250
IAS
70
EAS
245
PD
UNIT
375
A
mJ
b
125 b
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
RthJA
40
RthJC
0.4
°C/W
Notes
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
S15-1869-Rev. A, 10-Aug-15
Document Number: 68293
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP60030E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS = 0 V, ID = 250 μA
80
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 250
VDS = 80 V, VGS = 0 V
-
-
1
VDS = 80 V, VGS = 0 V, TJ = 125 °C
-
-
150
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic
V
nA
μA
VDS = 80 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS ≥ 10 V, VGS = 10 V
120
-
-
A
VGS = 10 V, ID = 30 A
-
0.0028
0.0034
VGS = 7.5 V, ID = 20 A
-
0.0030
0.0036
VDS = 15 V, ID = 30 A
-
82
-
-
7910
-
-
3250
-
RDS(on)
gfs
Ω
S
b
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 40 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
-
348
-
Total Gate Charge c
Qg
-
94
141
Gate-Source Charge c
Qgs
VDS = 40 V, VGS = 10 V, ID = 20 A
-
31
-
-
10
-
f = 1 MHz
0.28
1.4
2.8
td(on)
-
24
40
tr
VDD = 40 V, RL = 4 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
-
24
40
-
34
60
-
14
28
-
-
250
Gate-Drain Charge
c
Qgd
Gate Resistance
Rg
Turn-On Delay Time
c
Rise Time c
Turn-Off Delay Time c
Fall Time c
td(off)
tf
pF
nC
Ω
ns
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current (t = 100 μs)
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
ISM
VSD
IF = 10 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = 34 A, di/dt = 100 A/μs
A
-
0.8
1.5
V
-
126
190
ns
-
5
10
A
-
0.315
0.475
μC
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1869-Rev. A, 10-Aug-15
Document Number: 68293
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP60030E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
250
VGS = 10 V thru 6 V
ID - Drain Current (A)
ID - Drain Current (A)
TC = 25 °C
80
200
150
VGS = 5 V
100
60
TC = 125 °C
40
TC = - 55 °C
20
50
VGS = 4 V
0
0
0
1
2
3
4
0
2
4
6
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
8
Transfer Characteristics
120
0.0040
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
0.0035
90
TC = - 55 °C
60
TC = 125 °C
30
0.0030
VGS =7.5 V
0.0025
VGS = 10 V
0.0020
0.0015
0.0010
0
0
6
12
18
ID - Drain Current (A)
24
0
30
20
40
Transconductance
80
100
On-Resistance vs. Drain Current
11000
10
8800
VGS - Gate-to-Source Voltage (V)
ID = 20 A
C - Capacitance (pF)
60
ID - Drain Current (A)
Ciss
6600
4400
Coss
2200
VDS = 20 V
8
VDS = 40 V
6
VDS = 64 V
4
2
Crss
0
0
0
20
40
60
VDS - Drain-to-Source Voltage (V)
Capacitance
S15-1869-Rev. A, 10-Aug-15
80
0
20
40
60
80
100
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68293
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP60030E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
RDS(on) - On-Resistance (Normalized)
1.95
1.70
VGS = 7.5 V
ID =30 A
1.45
1.20
IS - Source Current (A)
TJ = 150 °C
VGS = 10 V, ID =30 A
10
TJ = 25 °C
1
0.95
0.70
- 50
- 25
0
25
50
75
100
125
150
0.1
0.0
175
0.2
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.6
0.8
1.0
1.2
Source Drain Diode Forward Voltage
0.010
3.5
I D = 30 A
ID = 250 μA
3.1
0.008
2.7
0.006
VGS(th) (V)
R DS(on) - On - Resistance (Ω)
0.4
VSD - Source-to-Drain Voltage (V)
T J = 125 °C
2.3
0.004
1.9
T J = 25 °C
0.002
0
1.5
1.1
3
4.5
6
7.5
- 50
9
- 25
0
25
50
75
100
TJ - Temperature (°C)
VGS - Gate -to -Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
125
150
175
Threshold Voltage
100
300
250
97
ID - Drain Current (A)
VDS (V) Drain -to-Source Voltage
ID = 250 μA
94
91
88
85
- 50
200
150
100
50
0
- 25
0
25
50
75
100
125
150
175
0
25
50
75
100
125
TJ - Temperature (°C)
TC - Case Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Current De-rating
S15-1869-Rev. A, 10-Aug-15
150
175
Document Number: 68293
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP60030E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
100
IDAV (A)
ID - Drain Current (A)
100
25 °C
10 μs
ID Limited
100 μs
10
1
Limited by R
DS(on)*
1 ms
0.1
150 °C
IDM Limited
TC = 25 °C
Single Pulse
10 ms
BVDSS Limited
10
0.000001
0.00001
0.0001
0.001
0.01
0.1
0.01
Time (s)
100 ms
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1869-Rev. A, 10-Aug-15
Document Number: 68293
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP60030E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68293.
S15-1869-Rev. A, 10-Aug-15
Document Number: 68293
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
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Revision: 02-Oct-12
1
Document Number: 91000