SUP50N10-21P Datasheet

SUP50N10-21P
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
100
RDS(on) () Max.
ID (A)
0.021 at VGS = 10 V
50d
0.023 at VGS = 8 V
49.7
0.028 at VGS = 6 V
45
Qg (Typ.)
30.2 nC
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
TO-220AB
• DC/AC Inverters
• Primary Side Switching
• Synchronous Rectification
D
G
G D S
Top View
Ordering Information:
SUP50N10-21P-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
41.6
IDM
60
Avalanche Current
IAS
40
L = 0.1 mH
Single Avalanche Energy
TC = 25 °C
Maximum Power Dissipationa
TA = 25 °Cc
Operating Junction and Storage Temperature Range
EAS
PD
V
50d
Pulsed Drain Current (t = 300 µs)
a
Unit
80
125b
3.1
A
mJ
W
TJ, Tstg
- 55 to 150
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
40
Junction-to-Case (Drain)
RthJC
1
°C/W
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 62781
S12-2730-Rev. A, 12-Nov-12
For technical questions, contact:: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP50N10-21P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
4
± 250
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
VDS = 100 V, VGS = 0 V, TJ = 150 °C
250
ID(on)
VDS 10 V, VGS = 10 V
20
V
nA
µA
A
VGS = 10 V, ID = 10 A
0.017
0.021
RDS(on)
VGS = 8 V, ID = 9.6 A
0.019
0.023
VGS = 6 V, ID = 8.7 A
0.022
0.028
gfs
VDS = 20 V, ID = 10 A
40

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source
Chargec
c
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
c
Turn-On Delay Time
Rise Timec
Turn-Off Delay Timec
Fall Timec
2055
VGS = 0 V, VDS = 50 V, f = 1 MHz
120
45
VDS = 50 V, VGS = 10 V, ID = 10 A
td(off)
68
nC
10.5
15.9
f = 1 MHz
0.3
td(on)
tr
pF
227
VDD = 20 V, RL = 2 
ID  8 A, VGEN = 10 V, Rg = 1 
tf
1.5
3
10
20
10
20
22
33
7
14

ns
Drain-Source Body Diode Ratings and Characteristics (TC = 25 °C)b
IS
50
Pulsed Current
ISM
60
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 8 A, VGS = 0 V
trr
IRM(REC)
IF = 8 A, dI/dt = 100 A/µs
Qrr
A
0.75
1.2
V
55
83
ns
4.1
6.2
A
107
161
nC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact:: [email protected]
Document Number: 62781
S12-2730-Rev. A, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP50N10-21P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
0.028
VGS = 10 V thru 7 V
VGS = 6 V
0.025
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
45
30
15
VGS = 6 V
0.022
VGS = 8 V
0.019
VGS = 10 V
0.016
VGS = 5 V
0.013
0
0
1
2
3
0
4
15
VDS - Drain-to-Source Voltage (V)
30
45
60
ID - Drain Current (A)
Output Characteristics
On-Resistance vs. Drain Current
2
0.05
ID =10 A
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
1.5
TC = 25 °C
1
0.5
0.04
TJ = 125 °C
0.03
0.02
TC = 125 °C
TJ = 25 °C
TC = - 55 °C
0.01
0
0
1.5
3
4.5
2
6
VGS - Gate-to-Source Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
10
75
ID = 10 A
TC = - 55 °C
60
VGS - Gate-to-Source Voltage (V)
gfs - Transconductance (S)
TC = 25 °C
TC = 125 °C
45
30
15
0
0
6
12
18
ID - Drain Current (A)
Transconductance
Document Number: 62781
S12-2730-Rev. A, 12-Nov-12
24
30
VDS = 50 V
8
VDS = 25 V
6
VDS = 80 V
4
2
0
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
For technical questions, contact:: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP50N10-21P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
3.8
ID = 250 μA
3.4
10
VGS(th) (V)
IS - Source Current (A)
TJ = 150 °C
3
2.6
TJ = 25 °C
1
2.2
0.1
1.8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50
- 25
0
25
50
75
100
VSD - Source-to-Drain Voltage (V)
TJ - Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
125
150
125
150
125
3000
VDS (V) Drain-to-Source Voltage
ID = 250 μA
C - Capacitance (pF)
2400
Ciss
1800
1200
600
120
115
110
105
Coss
0
Crss
100
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
- 50
100
- 25
0
25
50
75
100
TJ - Temperature (°C)
Capacitance
Drain Source Breakdown vs. Junction Temperature
60
2.2
VGS = 10
0V
45
1.75
ID - Drain Current (A)
RDS(on) - On-Resistance (Normalized)
ID = 10 A
VGS = 8 V
1.3
30
15
0.85
0
0.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating
For technical questions, contact:: [email protected]
Document Number: 62781
S12-2730-Rev. A, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP50N10-21P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
Limited by RDS(on)*
10
TJ = 150 °C
IDAV (A)
100 μs
ID - Drain Current (A)
TJ = 25 °C
10
1 ms
10 ms
DC, 10 s,
1 s, 100 ms
1
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
1
10-6
10-5
0.0001
0.001
0.01
0.1
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Time (s)
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62781.
Document Number: 62781
S12-2730-Rev. A, 12-Nov-12
For technical questions, contact:: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
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Revision: 02-Oct-12
1
Document Number: 91000