IRLL014, SiHLL014 Datasheet

IRLL014, SiHLL014
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
60
RDS(on) ()
VGS = 5.0 V
Qg max. (nC)
0.20
8.4
Qgs (nC)
3.5
Qgd (nC)
6.0
Configuration
Single
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Logic-level gate drive
RDS(on) specified at VGS = 4 V and 5 V
Available
Fast switching
Ease of paralleling
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
SOT-223
D
G
G
D
S
S
Marking code: LA
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SOT-223
SiHLL014TR-GE3
IRLL014TRPbF a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
VDS
VGS
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
a
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
ID
IDM
EAS
IAR
EAR
TC = 25 °C
TA = 25 °C
PD
dV/dt
TJ, Tstg
for 10 s
LIMIT
60
± 10
2.7
1.7
22
0.025
0.017
100
2.7
0.31
3.1
2.0
4.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 2.7 A (see fig. 12).
c. ISD  10 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0015-Rev. F, 18-Jan-16
Document Number: 91319
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLL014, SiHLL014
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
SYMBOL
MIN.
TYP.
MAX.
Maximum Junction-to-Ambient 
(PCB mount) a
PARAMETER
RthJA
-
-
60
Maximum Junction-to-Case (Drain)
RthJC
-
-
40
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 μA
60
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.073
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.0
-
2.0
V
Gate-Source Leakage
IGSS
VGS = ± 10 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 5.0 V
ID = 1.6 A b
-
-
0.20
VGS = 4.0 V
ID = 1.4 A b
-
-
0.28
gfs
VDS = 25 V, ID = 1.6 A
3.2
-
-
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
400
-
-
170
-
-
42
-
-
-
8.4
μA

S
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
tr
td(off)
VGS = 5.0 V
ID = 10 A, VDS = 48 V,
see fig. 6 and 13 b
VDD = 30 V, ID = 10 A,
Rg = 12 , RD = 2.8 , see fig. 10 b
tf
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
-
-
3.5
-
-
6.0
-
9.3
-
-
110
-
-
17
-
-
26
-
-
4.0
-
-
6.0
-
-
-
2.7
-
-
22
pF
nC
ns
D
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current a
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 2.7 A, VGS = 0 V b
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs b
-
-
1.6
V
-
65
130
ns
-
0.33
0.65
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
S16-0015-Rev. F, 18-Jan-16
Document Number: 91319
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLL014, SiHLL014
www.vishay.com
Vishay Siliconix
VGS
Top 7.5 V
5.0 V
4.0 V
3.5 V
3.0 V
2.75 V
Bottom 2.5 V
100
ID, Drain Current (A)
101
10-1
2.25 V
10-2
20 µs Pulse Width
TC = 25 °C
100
10-1
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
101
3.0
ID = 10 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig. 4 - Normalized On-Resistance vs. Temperature
700
V GS
Top 7.5 V
5.0 V
4.0 V
101
3.5 V
3.0 V
2.75 V
Bottom 2.5 V
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
600
Capacitance (pF)
ID, Drain Current (A)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
100
2.25 V
10-1
10-2
100
10-1
500
400
Ciss
300
Coss
200
Crss
100
20 µs Pulse Width
TC = 150 °C
0
100
101
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
ID, Drain Current (A)
150 °C
100
25 °C
10-2
20 µs Pulse Width
VDS = 25 V
2
2.5
3
3.5
4
4.5
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S16-0015-Rev. F, 18-Jan-16
5
VGS, Gate-to-Source Voltage (V)
101
10-3
101
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
10-1
20 40 60 80 100 120 140 160
ID = 10 A
6
VDS = 48 V
VDS = 30 V
6
4
2
For test circuit
see figure 13
0
0
2
4
6
8
10
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91319
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLL014, SiHLL014
ISD, Reverse Drain Current (A)
www.vishay.com
Vishay Siliconix
VDS
TJ = 150 °C
VGS
101
RD
D.U.T.
Rg
10 V
TJ = 25 °C
100
+
- VDD
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VGS = 0 V
10-1
0.4
0.8
1.2
1.6
2.4
2.0
VDS
90 %
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10 %
VGS
103
td(on)
5
td(off) tf
Fig. 10b - Switching Time Waveforms
2
ID, Drain Current (A)
tr
Operation in this area limited by RDS(on)
102
5
2
10
100 µs
5
1 ms
2
1
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
5
2
0.1
0.1
2
5
1
2
5
10
2
5
102
2
5
103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
3.0
ID, Drain Current (A)
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
S16-0015-Rev. F, 18-Jan-16
Document Number: 91319
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLL014, SiHLL014
www.vishay.com
Vishay Siliconix
Thermal Response (ZthJC)
102
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
0.01
t1
Single Pulse
(Thermal Response)
10-1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
1
102
101
103
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
Rg
+
-
I AS
V DD
VDS
10 V
tp
0.01 Ω
IAS
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Avalanche Energy (mJ)
Fig. 12a - Unclamped Inductive Test Circuit
250
ID
1.2 A
1.7 A
Bottom 2.7 A
Top
200
150
100
50
VDD = 25 V
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
S16-0015-Rev. F, 18-Jan-16
Document Number: 91319
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLL014, SiHLL014
www.vishay.com
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
0.2 µF
12 V
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
Period
P.W.
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91319.
S16-0015-Rev. F, 18-Jan-16
Document Number: 91319
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-223 (HIGH VOLTAGE)
B
D
A
3
0.08 (0.003)
B1
C
0.10 (0.004) M C B M
A
4
3
H
E
0.20 (0.008) M C A M
L1
1
2
3
4xL
3xB
e
θ
0.10 (0.004) M C B M
e1
4xC
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
1.55
1.80
0.061
0.071
0.033
B
0.65
0.85
0.026
B1
2.95
3.15
0.116
0.124
C
0.25
0.35
0.010
0.014
D
6.30
6.70
0.248
0.264
E
3.30
3.70
0.130
e
2.30 BSC
e1
4.60 BSC
0.181 BSC
H
6.71
7.29
0.264
L
0.91
-
0.036
L1
θ
0.061 BSC
-
0.146
0.0905 BSC
0.287
0.0024 BSC
10'
-
10'
ECN: S-82109-Rev. A, 15-Sep-08
DWG: 5969
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension do not include mold flash.
4. Outline conforms to JEDEC outline TO-261AA.
Document Number: 91363
Revision: 15-Sep-08
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000