SUU09N10-76P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.076 at VGS = 10 V 9d 0.096 at VGS = 6 V 9d Qg (Typ.) 8.5 TO-251 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Motor Control D Drain connected to DRAIN-TAB G G D S Top View S Ordering Information SUU09N10-76P-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C IDM Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range ID L = 0.1 mH TC = 25 °C TA = 25 °Cc V 9d 9d A 20 IAS 18 EAS 16.2 PD Unit 32.1b 2.5 mJ W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 50 Junction-to-Case (Drain) RthJC 3.9 °C/W Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited Document Number: 63456 S11-2184-Rev. A, 07-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUU09N10-76P Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 4 ± 250 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 150 °C 250 ID(on) RDS(on) gfs VDS 10 V, VGS = 10 V 15 V nA µA A VGS = 10 V, ID = 6.1 A 0.063 0.076 VGS = 6 V, ID = 5.4 A 0.080 0.096 VDS = - 20 V, ID = 6.1 A 13 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Rg Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec td(off) pF 71 35 VDS = 50 V, VGS = 10 V, ID = 6.1 A VDS = 50 V, VGS = 4.5 V, ID = 6.1 A 12.7 19.1 8.5 12.8 3.6 f = 1 MHz VDD = 50 V, RL = 10.2 ID 4.9 A, VGEN = 10 V, Rg = 1 tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.2 0.9 1.8 7 14 11 20 11 20 6 12 9 Pulsed Current ISM 20 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 4.9 A, VGS = 0 V 0.82 IF = 4.9 A, dI/dt = 100 A/µs 46 trr IRM(REC) Qrr ns b IS Continuous Current nC 4 td(on) tr c 505 VGS = 0 V, VDS = 50 V, f = 1 MHz A 1.5 V 36 53 ns 2.7 4.1 A 69 nC Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 63456 S11-2184-Rev. A, 07-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUU09N10-76P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 0.126 VGS = 10 V thru 6 V RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 15 10 5 0.102 VGS = 6 V 0.078 VGS = 10 V 0.054 VGS = 5 V 0.030 0 0 1 2 3 VDS - Drain-to-Source Voltage (V) 0 4 3 6 9 12 15 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 1.5 0.20 ID = 6.1A RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 1.2 0.9 TC = 25 °C 0.6 0.3 0.15 TJ = 125 °C 0.10 TJ = 25 °C 0.05 TC = 125 °C TC = - 55 °C 0 0 0 1.5 3 4.5 4 6 7 9 10 VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 20 ID = 6.1 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C gfs - Transconductance (S) 6 VGS - Gate-to-Source Voltage (V) TC = 25 °C 15 TC = 125 °C 10 5 0 VDS = 50 V 8 VDS = 25 V 6 VDS = 80 V 4 2 0 0 2 4 6 ID - Drain Current (A) Transconductance Document Number: 63456 S11-2184-Rev. A, 07-Nov-11 8 10 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUU09N10-76P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.9 100 ID = 250 μA 10 VGS(th) (V) IS - Source Current (A) 3.5 TJ = 150 °C 3.1 2.7 TJ = 25 °C 1 2.3 1.9 - 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 25 0 25 50 75 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 100 125 150 100 125 150 122 800 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) ID = 250 μA 600 Ciss 400 200 Coss Crss 20 40 60 80 112 107 102 97 - 50 0 0 117 100 - 25 0 25 50 75 VDS - Drain-to-Source Voltage (V) TJ - Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 16 2.1 VGS = 10 V 12 1.7 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) ID = 6.1 A VGS = 6 V 1.3 8 4 0.9 0.5 - 50 0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 4 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating Document Number: 63456 S11-2184-Rev. A, 07-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUU09N10-76P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 10 Limited by RDS(on)* IDAV (A) TJ = 150 °C ID - Drain Current (A) 10 TJ = 25 °C 100 μs 1 ms 1 10 ms DC, 10 s 1 s, 100 ms 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 1 0.000001 0.00001 0.0001 0.001 0.1 0.01 Time (s) Single Pulse Avalanche Current Capability vs. Time 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10 -4 0.02 Single Pulse 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63456. Document Number: 63456 S11-2184-Rev. A, 07-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-251AA (IPAK) E A MILLIMETERS L2 c1 b2 D L3 L1 b1 b e MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 E 6.48 6.73 0.255 0.265 e L c INCHES DIM. 2.28 BSC 0.090 BSC L 8.89 9.53 0.350 0.375 L1 1.91 2.28 0.075 0.090 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.045 0.060 ECN: T13-0362-Rev. F, 03-Jun-13 DWG: 5346 A1 Note • Dimension L3 is for reference only. Revision: 03-Jun-13 Document Number: 71666 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000