PANASONIC ON2175

Reflective Photosensors (Photo Reflectors)
CNB1304H (ON2175)
Reflective photosensor
Tape end sensor for DAT
(R2.3)
4.0±0.3
Unit: mm
φ2.2±0.3
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage
VR
3
V
emitting diode) Forward current
IF
50
mA
Power dissipation *1
Unit
PD
75
mW
Output (Photo Collector-emitter voltage
transistor)
(Base open)
VCEO
30
V
Emitter-collector voltage
(Base open)
VECO
5
V
Temperature
Collector current
IC
20
mA
Collector power dissipation *2
PC
100
mW
Operating ambient temperature
T opr
−20 to +85
°C
Storage temperature
Tstg
−30 to +100
°C
6.5±0.3
+0
5.0 -0.3
4.0±0.3
(C0.3)
(C0.2)
2-0.4±0.2
(3.75)
4
2
3.0±0.3
+0
φ1.2 −0.3
1.0±0.3
• Fast response
• Small size and light weight
Input (Light
2-φ1.2±0.15
7.0±0.3
5.0 min.
■ Features
3.75±0.15
+0
8.0 -0.3
7±0.3
CNB1304H is a sensor which consists of a high efficiency GaAs
infrared light emitting diode and a high sensitivity Si phototransistor
which are arranged together in the same direction. It detects the
beginning and end of a tape based on changes in the amount of light
reflected from a prism which is situated outside of the sensor.
(4-R0.3)
6.0±0.15
8.3±0.3
2-φ1.2±0.15
■ Overview
2-0.15 +0.2
-0.1
(3.75)
1: Anode
2: Cathode
3
1
3: Collector
4: Emitter
PRSTR104-005 Package
(Note) ( ) Dimension is reference
Note) *1: Input power derating ratio is
1.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is
1.33 mW/°C at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Input
Symbol
Forward voltage
characteristics Reverse current
Max
Unit
VF
IF = 50 mA
1.5
V
IR
VR = 3 V
10.0
µA
VCE = 10 V
200
nA
1 500
µA
Output
Collector-emitter cutoff current
characteristics (Base open)
ICEO
Collector current *1
IC
Transfer
characteristics Collector-emitter saturation voltage VCE(sat)
Rise time
tr
Fall time
tf
Conditions
Min
VCE = 5 V, IF = 20 mA
Typ
100
IF = 50 mA, IC = 0.1 mA
0.5
VCC = 10 V, IC = 0.5 mA, RL = 100 Ω
6
V
µs
6
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1: IC measurement circuit
*2: Switching time measurement circuit
(Unit: mm)
1
2.5
1
Sig. in
VCC
(Input pulse)
Sig. out
CNB1304H
2- 1.5
50 Ω
RL
(Output pulse)
90%
10%
tr
tf
tr: Rise time
tf: Fall time
prism
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00049BED
1
Caution for Safety
■ This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP