Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens ■ Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current: ICEO = 5 nA (typ.) • Fast response: tr , tf = 3 µs (typ.) • Base pin for easy circuit design • TO-18 standard type package 3-φ0.45±0.05 2.54±0.25 1. 0± 3 Parameter Symbol Rating Unit Collector-emitter voltage (Base open) VCEO 30 V Collector-base voltage (Emitter open) VCBO 40 V Emitter-collector voltage (Base open) VECO 5 V Emitter-base voltage (Collector open) VEBO 5 V IC 50 mA Collector current ° 1. 0± 0. ±3 45° 15 2 0. ■ Absolute Maximum Ratings Ta = 25°C Collector power dissipation * PC 150 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C 2 1 1: Emitter 2: Base 3: Collector MTGLR103-001 Package φ5.75 max. Note) *: The rate of electric power reduction is 1.5 mW/°C above Ta = 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Photocurrent *1 ICE(L) VCE = 10 V, L = 100 lx Dark current Min Typ 1.5 3.5 Max Unit mA ICEO VCE = 10 V 5 Peak emission wavelength λp VCE = 10 V 800 nm Half-power angle θ The angle from which photocurrent becomes 50% 10 ° Rise time *2 tr VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω Fall time *2 tf Collector-emitter saturation voltage *1 VCE(sat) ICE(L) = 1 mA, L = 500 lx 300 nA 3 µs 3 µs 0.2 0.4 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit Sig. in VCC (Input pulse) 50 Ω Sig. out RL 90% 10% (Output pulse) tr tr: Rise time tf: Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHE00005BED 1 PNZ102 PC Ta IC VCE 20 80 40 Ta = 25°C 25 µA 16 20 µA 12 Ta = 25°C T = 2 856 K 500 lx 1 000 lx 15 µA PC = 150 mW 8 10 µA 4 IB = 5 µA Photocurrent ICE(L) (mA) 120 ICE(L) VCE 20 30 µA 16 160 Collector current IC (mA) Collector power dissipation PC (mW) 200 400 lx 300 lx 12 PC = 150 mW 200 lx 8 150 lx 100 lx 4 L = 50 lx 0 −20 0 20 40 60 80 0 100 Ambient temperature Ta (°C) 0 10 1 10−1 10 VCE = 10 V 1 0 40 80 Spectral sensitivity characteristics 40 80 120 103 VCC = 10 V Ta = 25°C 80 60 40 20 400 600 800 1 000 Wavelength λ (nm) 1 200 102 Rise time tr (µs) Relative sensitivity ∆S (%) Relative sensitivity ∆S (%) 0 tr ICE(L) Directivity characteristics Ta = 25°C 2 100 lx Ambient temperature Ta (°C) 100 80 200 lx 10 1 −40 120 VCE = 10 V T = 2 856 K L = 500 lx Ambient temperature Ta (°C) 100 30 ICE(L) Ta 10 10−1 −40 103 102 20 102 102 Illuminance L (lx) 0 200 10 Collector-emitter voltage VCE (V) Photocurrent ICE(L) (mA) Dark current ICEO (nA) Photocurrent ICE(L) (mA) 103 VCE = 10 V Ta = 25˚C T = 2 856 K 1 1 ICEO Ta 10 10−2 30 Collector-emitter voltage VCE (V) ICE(L) L 102 20 0 60 40 RL = 1 kΩ 500 Ω 10 100 Ω 1 20 0 30 10 10 Half-power angle θ (°) SHE00005BED 30 10−1 −1 10 1 10 Photocurrent ICE(L) (mA) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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