BPW41N Datasheet

BPW41N
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 5 x 4 x 6.8
• Radiant sensitive area (in mm2): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
94 8480
• Angle of half sensitivity: ϕ = ± 65°
• Compliant to RoHS Directive to 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
BPW41N is a PIN photodiode with high speed and high
radiant sensitivity in a black, side view plastic package with
daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
PRODUCT SUMMARY
COMPONENT
Ira (μA)
ϕ (deg)
λ0.5 (nm)
45
± 65
870 to 1050
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
Side view
BPW41N
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPW41N
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Operating temperature range
Thermal resistance junction/ambient
Rev. 1.6, 23-Aug-11
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Tamb
- 40 to + 100
°C
°C
Tstg
- 40 to + 100
t≤5s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Storage temperature range
Soldering temperature
SYMBOL
Document Number: 81522
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW41N
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Breakdown voltage
IR = 100 μA, E = 0
V(BR)
60
MAX.
UNIT
V
VR = 10 V, E = 0
Iro
2
VR= 0 V, f = 1 MHz, E = 0
CD
70
VR= 3 V, f = 1 MHz, E = 0
CD
25
Reverse dark current
Diode capacitance
TYP.
30
nA
40
pF
pF
Open circuit Voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
38
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
0.1
%/K
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
45
μA
43
Ira
Angle of half sensitivity
ϕ
± 65
deg
Wavelength of peak sensitivity
λp
950
nm
λ0.5
870 to 1050
nm
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√ Hz
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
100
ns
Range of spectral bandwidth
Noise equivalent power
100
1.4
VR = 5 V
λ = 950 nm
1.2
1 mW/cm2
I ra - Reverse Light Current (µA)
I ra rel - Relative Reverse Light Current
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.0
0.8
0.5 mW/cm2
λ = 950 nm
0.1 mW/cm2
0.05 mW/cm2
0.02 mW/cm2
1
0.6
0
94 8409
20
40
60
80
0.1
100
Tamb - Ambient Temperature (°C)
94 8415
Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature
CD - Diode Capacitance (pF)
10
VR = 5 V
λ = 950 nm
1
94 8414
0.1
1
10
E e - Irradiance (mW/cm²)
Fig. 2 - Reverse Light Current vs. Irradiance
Rev. 1.6, 23-Aug-11
10
100
80
100
0.1
0.01
1
V R - Reverse Voltage (V)
Fig. 3 - Reverse Light Current vs. Reverse Voltage
1000
Ira - Reverse Light Current (µA)
0.2 mW/cm2
10
E=0
f = 1 MHz
60
40
20
0
0.1
948407
1
10
100
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Document Number: 81522
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW41N
www.vishay.com
Vishay Semiconductors
10°
20°
1.0
0.8
0.6
0.4
0.2
0
750
850
950
0.9
50°
0.8
60°
70°
0.7
80°
0.6
1150
1050
λ - Wavelength (nm)
94 8408
40°
1.0
ϕ - Angular Displacement
30°
Srel - Relative Radiant Sensitivity
S (λ)rel - Relative Spectral Sensitivity
0°
1.2
0.4
0.2
0
94 8406
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
± 0.2
4
± 0.2
5
C
6.8
< 0.5
± 0.3
Chip position
(2.05)
19.8
- 0.8
8.9
± 0.3
Sensitive area
(2.8)
A
Area not plane
< 0.65
0.45
+ 0.01
- 0.05
2.5 nom.
Drawing-No.: 6.544-5108.01-4
2.3
0.4
± 0.2
+ 0.1
- 0.05
technical drawings
according to DIN
specifications
Issue:1; 01.07.96
96 12195
Rev. 1.6, 23-Aug-11
Document Number: 81522
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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