elm14466aa

Single N-channel MOSFET
ELM14466AA-N
■General description
■Features
ELM14466AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=9.4A (Vgs=10V)
Rds(on) < 23mΩ (Vgs=10V)
Rds(on) < 35mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
9.4
7.7
50
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.1
A
1
A
2
W
2.1
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
34
Max.
40
Unit
°C/W
62
18
75
24
°C/W
°C/W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
Pin name
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
DRAIN
DRAIN
7
DRAIN
8
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM14466AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
100
nA
1.6
3.0
V
A
17
23
24
30
27
24
35
mΩ
S
Is=1A, Vgs=0V
0.75
1.00
4.3
V
A
820
Vgs=0V, Vds=15V, f=1MHz
621
118
pF
pF
Vgs=0V, Vds=0V, f=1MHz
85
0.8
1.5
pF
Ω
11.3
17.0
nC
5.7
8.0
nC
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Total gate charge (4.5V)
Qg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
0.004
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Rds(on)
V
μA
Idss
Static drain-source on-resistance
30
1.000
5.000
Zero gate voltage drain current
Gate threshold voltage
On state drain current
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Vgs=10V, Id=9.4A
1.0
20
Ta=125°C
Vgs=4.5V, Id=5A
Vds=5V, Id=9.4A
Qg
Vgs=10V, Vds=15V, Id=9.4A
10
2.1
3.0
mΩ
nC
nC
td(on)
4.5
6.5
ns
tr
Vgs=10V, Vds=15V
td(off) RL=1.6Ω, Rgen=3Ω
3.1
15.1
5.0
23.0
ns
ns
2.7
15.5
7.1
5.0
21.0
10.0
ns
ns
nC
tf
trr
Qrr
If=9.4A, dIf/dt=100A/μs
If=9.4A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
AO4466
ELM14466AA-N
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
20
10V
50
6V
40
4.5V
Id(A)
Id (A)
Vds=5V
16
30
12
8
20
125°C
Vgs=3.5V
4
10
0
25°C
0
0
1
2
3
4
5
1.5
2
Vds (Volts)
Fig 1: On-Region Characteristics
3.5
4
4.5
Normalized On-Resistance
1.6
35
Rds(on) (m�)
3
Vgs(Volts)
Figure 2: Transfer Characteristics
40
Vgs=4.5V
30
25
20
Vgs=10V
15
10
Vgs=10V
1.4
Vgs=4.5V
1.2
1
0.8
0.6
0
5
10
15
20
-50
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1.0E+01
Id=9.4A
1.0E+00
50
1.0E-01
40
Is (A)
Rds(on) (m�)
2.5
125°C
1.0E-02
125°C
25°C AS CRITICAL
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
30
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
20
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT
25°CNOTICE.
1.0E-05
10
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
4-3
1.0
Single N-channel MOSFET
AO4466
ELM14466AA-N
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
800
Vds=15V
Id=9.4A
Capacitance (pF)
Vgs (Volts)
8
6
4
Ciss
600
400
2
200
0
0
0
2
4
6
8
10
12
Coss
Crss
0
5
15
20
25
Vds (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
Rds(on)
limited
100�s
1ms
0.1s
1.0
1s
Tj(max)=150°C
Ta=25°C
DC
1
10
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
20
0
0.0001
Vds (Volts)
10
30
10
10s
0.1
0.1
Tj(max)=150°C
Ta=25°C
40
10�s
10ms
Z�ja Normalized Transient
Thermal Resistance
30
50
Power (W)
Id (Amps)
100.0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
DOES NOT ASSUME ANY LIABILITY ARISIN
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPd
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
4-4
100
1000
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