elm13420ca

Single N-channel MOSFET
ELM13420CA-S
■General description
■Features
ELM13420CA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V.
•
•
•
•
•
•
Vds=20V
Id=6.0A (Vgs=10V)
Rds(on) < 24mΩ (Vgs=10V)
Rds(on) < 27mΩ (Vgs=4.5V)
Rds(on) < 42mΩ (Vgs=2.5V)
Rds(on) < 55mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
20
V
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current
±12
6
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
5
Idm
Power dissipation
V
30
1.4
0.9
-55 to 150
A
3
W
2
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Rθja
Maximum junction-to-lead
Steady-state
Rθjl
■Pin configuration
Typ.
70
100
Max.
90
125
Unit
°C/W
°C/W
63
80
°C/W
■Circuit
D
SOT-23(TOP VIEW)
3
1
2
Note
1
1, 4
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
5-1
Single N-channel MOSFET
ELM13420CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
μA
±100
nA
0.75
1.10
V
16
24
Rds(on) Vgs=4.5V, Id=5A
23
18
35
27
Vgs=2.5V, Id=4A
23
42
Vgs=1.8V, Id=2A
31
55
Vds=5V, Id=6A
Is=1A, Vgs=0V
25
0.7
Idss
Vds=20V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Gfs
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (Vgs=10V)
Crss
Rg
Total gate charge (Vgs=4.5V)
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Vgs=10V, Id=6A
Static drain-source on-resistance
V
1
5
Zero gate voltage drain current
Gate threshold voltage
20
0.40
Ta=125°C
mΩ
1.0
2
S
V
A
Vgs=0V, Vds=10V, f=1MHz
420
65
525
95
630
125
pF
pF
Vgs=0V, Vds=0V, f=1MHz
45
0.8
75
1.7
105
2.6
pF
Ω
Qg
Vgs=10V, Vds=10V, Id=6A
12.5
nC
6.0
nC
1.0
2.0
3.0
nC
nC
ns
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgs
Qgd
td(on)
Vgs=10V, Vds=10V
7.5
ns
Turn-off delay time
Turn-off fall time
td(off) RL=1.7Ω, Rgen=3Ω
tf
20.0
6.0
ns
ns
14
6
ns
nC
Body diode reverse recovery time
Body diode reverse recovery charge
tr
trr
Qrr
If=6A, dIf/dt=100A/μs
If=6A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment with
Ta =25°C. The value in any given application depends on the user's specific board design.
2. The power dissipation Pd is based on Tj(Max)=150°C, using≤10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency and duty
cycles to keep initial Tj=25°C.
4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2
FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA curve provides a
single pulse rating.
5-2
Single N-channel MOSFET
AO3420
ELM13420CA-S
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
10V
3.5V
15
2.5V
4.5V
ID(A)
ID (A)
30
VDS=5V
20
10
1.8V
125�C
5
10
25�C
VGS=3.5V
0
0
0
1
2
3
4
0
5
60
Normalized On-Resistance
50
45
RDS(ON) (mΩ
Ω)
1
1.5
2
2.5
1.8
55
VGS=1.8V
40
35
VGS=2.5V
30
25
VGS=4.5V
20
15
VGS=10V
10
0
5
VGS=4.5V
ID=5A
VGS=2.5V
ID=4A
1.6
1.4
17
VGS=1.8V
5
ID=2A
1.2
2
10
=10V
VGS
ID=6A
1
0.8
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note 5)
0
45
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note 5)
1.0E+02
ID=6A
40
1.0E+01
40
1.0E+00
35
30
125�C
IS (A)
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note 5)
VDS (Volts)
Fig 1: On-Region Characteristics (Note 5)
25
125�C
1.0E-01
1.0E-02
25�C
1.0E-03
20
1.0E-04
25�C
1.0E-05
15
0
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note 5)
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note 5)
5-3
1.2
AO3420
Single N-channel MOSFET
ELM13420CA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
Capacitance (pF)
8
VGS (Volts)
1000
VDS=10V
ID=6A
6
4
600
400
Coss
2
200
0
0
0
5
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
Ciss
15
Crss
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
10000
100.0
TA=25�C
RDS(ON)
limited
1000
10µs
Power (W)
ID (Amps)
10.0
100µs
1.0
1ms
10ms
0.1
10
10s
TJ(Max)=150�C
TA=25�C
DC
1
0.0
0.01
0.1
VDS
1
(Volts)
10
0.00001
100
Zθ JA Normalized Transient
Thermal Resistance
1
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 6)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 6)
10
100
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125�C/W
0.1
PD
PD
0.01
Ton
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note 6)
5-4
100
1000
Single N-channel MOSFET
AO3420
ELM13420CA-S
■Test circuit and waveform
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
R e s istiv e S w itch in g T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
Rg
90 %
+
VDC
Vdd
-
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D io d e R eco very T est C ircu it & W a vefo rm s
Q rr = -
V ds +
DUT
V ds -
Isd
V gs
Ig
Idt
V gs
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V ds
5-5
V dd
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