AO9926C 20V Dual N-Channel MOSFET General Description The AO9926C uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Features VDS ID (at VGS=10V) 20V 7.6A RDS(ON) (at VGS=10V) < 23mΩ RDS(ON) (at VGS =4.5V) < 26mΩ RDS(ON) (at VGS=2.5V) < 34mΩ RDS(ON) (at VGS=1.8V) < 52mΩ SOIC-8 D1 D2 Top View S2 1 8 D2 G2 S1 2 3 4 7 6 5 D2 D1 G1 G1 D1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead 1/5 2 Steady-State Steady-State W 1.28 TJ, TSTG Symbol t ≤ 10s A 38 PD Junction and Storage Temperature Range V 6.1 IDM TA=70°C Units V 7.6 ID TA=70°C TA=25°C Power Dissipation B Maximum 20 ±12 S2 RθJA RθJL -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO9926C 20V Dual N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ Max 20 V VDS=20V, VGS=0V 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=10V, VDS=5V 38 Units µA ±100 nA 0.75 1.1 V 16.5 23 25 30 VGS=4.5V, ID=7A 18.5 26 mΩ VGS=2.5V, ID=6A 24 34 mΩ VGS=1.8V, ID=2A 32 52 mΩ Forward Transconductance VDS=5V, ID=7.6A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current VGS=10V, ID=7.6A TJ=125°C RDS(ON) gFS Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz A mΩ S 1 V 2.5 A 420 525 630 pF 65 95 125 pF 45 75 105 pF 0.8 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.5 nC Qg(4.5V) Total Gate Charge 6 nC VGS=10V, VDS=15V, ID=7.6A Qgs Gate Source Charge 1 nC Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time 7.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω 20 ns 6 ns IF=7.6A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Charge IF=7.6A, dI/dt=100A/µs 6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO9926C 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V 3.5V 2.5V 4.5V 15 IDD(A) IIDD (A) (A) 30 VDS=5V 20 10 1.8V 125°C 5 10 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 60 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2.5 1.8 Normalized On-Resistance 55 50 45 RDS(ON) (mΩ Ω) 0.5 40 VGS=1.8V 35 V GS=2.5V 30 25 VGS=4.5V 20 15 VGS=10V 10 0 5 VGS =4.5V ID =6A 1.6 VGS=2.5V ID=7A 1.4 17 VGS=1.8V 5 ID=2A 1.2 2 10 VGS=10V ID=7.6A 1 0.8 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 45 1.0E+02 ID=7.6A 1.0E+01 40 40 1.0E+00 30 125°C 25 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 20 25°C 1.0E-04 1.0E-05 15 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 IS (A) RDS(ON) (mΩ Ω) 35 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO9926C 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=10V ID=7.6A 800 Capacitance (pF) VGS (Volts) 8 6 4 600 400 Coss 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss Crss 0 15 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 100.0 TA=25°C 1000 Power (W) ID (Amps) 10µs RDS(ON) limited 10.0 100µs 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 100 10 10s DC 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 Zθ JA Normalized Transient Thermal Resistance 1 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO9926C 20V Dual N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D io d e R eco very T est C ircu it & W a vefo rm s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig 5/5 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.freescale.net.cn