elm34405aa

Single P-channel MOSFET
ELM34405AA-N
■General description
■Features
ELM34405AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-40V
Id=-5.5A
Rds(on) < 55mΩ (Vgs=-10V)
Rds(on) < 94mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-40
V
Gate-source voltage
Vgs
±20
-5.5
V
Ta=25°C
Continuous drain current
Ta=70°C
Pulsed drain current
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
A
-4.5
-20
A
2.5
3
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Rθja
■Pin configuration
Typ.
Max.
50
Unit
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
SOURCE
GATE
5
6
DRAIN
DRAIN
7
8
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM34405AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-30V,Vgs=0V,Ta=125°C
-10
Vds=0V, Vgs=±20V
nA
-2.5
V
A
1
mΩ
1
-1
S
V
1
1
Is
-1.3
A
Ism
-2.6
A
Rds(on)
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
μA
±250
Static drain-source on-resistance
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Max. body-diode continuous current
-40
Vds=-32V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Gfs
Vsd
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
-1.5
Vgs=-10V, Id=-5.5A
38
55
Vgs=-4.5V, Id=-4.5A
65
94
Vds=-10V, Id=-5.5A
Is=If, Vgs=0V
11
Ciss
Coss
Crss
-1.0
-20
Vgs=0V, Vds=-10V, f=1MHz
Vgs=-10V, Vds=-20V
Id=-5.5A
Vgs=-10V, Vds=-20V
td(off) Id=-1A, Rgen=6Ω
690
pF
310
75
pF
pF
14.0
2.2
nC
nC
2
2
1.9
6.7
13.4
nC
ns
2
2
9.7
19.4
ns
2
19.8
35.6
ns
2
22.2
ns
ns
2
Turn-off fall time
Body diode reverse recovery time
tf
trr
If=-5A, dIf/dt=100A/μs
12.3
15.5
Body diode reverse recovery charge
Qrr
If=-5A, dIf/dt=100A/μs
7.9
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
3
nC
NIKO-SEM
P-Channel
Logic Level
Enhancement
Single P-channel
MOSFET
P5504EVG
Mode Field Effect Transistor
ELM34405AA-N
SOP-8
Lead-Free
■Typical electrical and thermal characteristics
-Is - Reverse Drain Current(A)
100
V GS = 0V
10
1
0.1
25° C -55° C
0.01
0.001
0
4-3
T A = 125° C
0.8
1.0
1.2
0.2
0.6
0.4
-VSD - Body Diode Forward Voltage(V)
1.4
NIKO-SEM
P-Channel
Logic Level
Enhancement
Single P-channel
MOSFET
Mode Field Effect Transistor
ELM34405AA-N
4-4
P5504EVG
SOP-8
Lead-Free
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