elm32407la

Single P-channel MOSFET
ELM32407LA-S
■General description
■Features
ELM32407LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-40V
Id=-18A
Rds(on) < 25.8mΩ (Vgs=-10V)
Rds(on) < 40.0mΩ (Vgs=-7V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-40
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
-18.0
-13.5
-40
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
A
42
3
W
27
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Steady-state
Steady-state
Rθjc
Rθja
■Pin configuration
Typ.
Max.
Unit
3
75
°C/W
°C/W
Note
■Circuit
TO-252-3(TOP VIEW)
D
TAB
2
1
Pin No.
1
Pin name
GATE
2
3
DRAIN
SOURCE
3
4-1
G
S
Single P-channel MOSFET
ELM32407LA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Idss
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-40
V
Vds=-32V, Vgs=0V
Vds=-30V, Vgs=0V, Ta=125°C
Gate-body leakage current
Igss Vds=0V, Vgs=±20V
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=-250μA
-1.2
On state drain current
Id(on) Vgs=-10V, Vds=-5V
-40
Vgs=-10V, Id=-18A
Static drain-source on-resistance
Rds(on)
Vgs=-7V, Id=-10A
Forward transconductance
Gfs Vds=-5V, Id=-18A
Diode forward voltage
Vsd Is=If, Vgs=0V
Max. body-diode continuous current
Is
Pulsed body-diode current
Ism
DYNAMIC PARAMETERS
Input capacitance
Ciss
Output capacitance
Coss Vgs=0V, Vds=-15V, f=1MHz
Reverse transfer capacitance
Crss
SWITCHING PARAMETERS
Total gate charge
Qg
Vgs=-10V, Vds=-20V
Gate-source charge
Qgs
Id=-18A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
tr
Vgs=-10V, Vds=-20V
Turn-off delay time
td(off) Id=-1A, RL=1Ω, Rgen=6Ω
Turn-off fall time
tf
Body diode reverse recovery time
trr
If=-18A, dIf/dt=100A/μs
Body diode reverse recovery charge
Qrr
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
-1
-10
-2.2
μA
±250
nA
-3.0
V
A
1
mΩ
1
-1.3
S
V
1
1
-18
A
-40
A
22.0
25.8
30.0
40.0
20
3
1570
pF
320
210
pF
pF
29
6
nC
nC
2
2
7
12
nC
ns
2
2
29
ns
2
42
ns
2
33
29
ns
ns
2
21
nC
NIKO-SEM
P-Channel Logic Level Enhancement
P2504EDG
Mode Field Effect Transistor
Single
P-channel MOSFET
TO-252
Lead-Free
ELM32407LA-S
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
-Is - Reverse Drain Current(A)
V GS= 0V
10
1
0.1
TA = 125°C
25°C -55°C
0.01
0.001
0
3
4-3
0.8 1.0
1.2
0.2 0.4 0.6
-VSD- Body Diode Forward Voltage(V)
1.4
MAR-29-2006
NIKO-SEM
Single P-channel
MOSFET
P-Channel
Logic Level
Enhancement
Mode Field Effect Transistor
ELM32407LA-S
4
4-4
P2504EDG
TO-252
Lead-Free
MAR-29-2006
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