Single P-channel MOSFET ELM321504A-S ■General description ■Features ELM321504A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-40V Id=-45A Rds(on) < 15mΩ (Vgs=-10V) Rds(on) < 29mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -40 V Gate-source voltage Vgs ±20 -45 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Power dissipation Idm Ias -45 A Eas 102 50 mJ Pd Tc=70°C Junction and storage temperature range A -36 -150 Tj, Tstg A 3 4 W 32 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 2.5 75.0 Unit °C/W °C/W Note ■Circuit TO-252-3(TOP VIEW) D TAB 2 1 Pin No. 1 2 Pin name GATE DRAIN 3 SOURCE 3 5-1 G S Single P-channel MOSFET ELM321504A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-30V, Vgs=0V, Ta=55°C -10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Crss Rg Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge -1.7 -150 -2.2 μA ±100 nA -3.0 V A Vgs=-10V, Id=-25A 13 15 mΩ Vgs=-4.5V, Id=-15A 19 29 mΩ Vds=-5V, Id=-25A If=Is, Vgs=0V 24 -0.7 -1.3 S V -25 A Is Input capacitance Output capacitance Turn-on rise time Turn-off delay time V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vds=-5V, Vgs=-10V Gfs Vsd -40 Vds=-32V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=-15V f=1MHz Vgs=-15mV, Vds=0V, f=1MHz Vgs=-10V, Vds=-20V Id=-25A Vgs=-10V, Vds=-20V tr Id=-1A, RL=0.75Ω td(off) Rgen=6Ω tf trr If=-25A, dlf/dt=100A/μs Qrr NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Vdd =-20V, Starting Tj = 25°C. 5-2 1 1 1 1 2700 2950 400 430 pF pF 230 3.5 250 4.5 pF Ω 40 10 45 13 nC nC 2 2 5 8 nC ns 2 2 ns 2 89 ns 2 35 28 ns ns 2 26 nC 11 75 Single P-channel MOSFET ELM321504A-S ■Typical electrical and thermal characteristics 5-3 Single P-channel MOSFET ELM321504A-S � � � � � � � � � � 5-4 Single P-channel MOSFET ELM321504A-S ■Test circuit and waveforms 5-5