elm321504a

Single P-channel MOSFET
ELM321504A-S
■General description
■Features
ELM321504A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-40V
Id=-45A
Rds(on) < 15mΩ (Vgs=-10V)
Rds(on) < 29mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-40
V
Gate-source voltage
Vgs
±20
-45
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Power dissipation
Idm
Ias
-45
A
Eas
102
50
mJ
Pd
Tc=70°C
Junction and storage temperature range
A
-36
-150
Tj, Tstg
A
3
4
W
32
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Steady-state
Steady-state
Symbol
Rθjc
Rθja
■Pin configuration
Typ.
Max.
2.5
75.0
Unit
°C/W
°C/W
Note
■Circuit
TO-252-3(TOP VIEW)
D
TAB
2
1
Pin No.
1
2
Pin name
GATE
DRAIN
3
SOURCE
3
5-1
G
S
Single P-channel MOSFET
ELM321504A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-30V, Vgs=0V, Ta=55°C
-10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Crss
Rg
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-1.7
-150
-2.2
μA
±100
nA
-3.0
V
A
Vgs=-10V, Id=-25A
13
15
mΩ
Vgs=-4.5V, Id=-15A
19
29
mΩ
Vds=-5V, Id=-25A
If=Is, Vgs=0V
24
-0.7
-1.3
S
V
-25
A
Is
Input capacitance
Output capacitance
Turn-on rise time
Turn-off delay time
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vds=-5V, Vgs=-10V
Gfs
Vsd
-40
Vds=-32V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Vgs=0V, Vds=-15V
f=1MHz
Vgs=-15mV, Vds=0V, f=1MHz
Vgs=-10V, Vds=-20V
Id=-25A
Vgs=-10V, Vds=-20V
tr
Id=-1A, RL=0.75Ω
td(off)
Rgen=6Ω
tf
trr
If=-25A, dlf/dt=100A/μs
Qrr
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Vdd =-20V, Starting Tj = 25°C.
5-2
1
1
1
1
2700 2950
400 430
pF
pF
230
3.5
250
4.5
pF
Ω
40
10
45
13
nC
nC
2
2
5
8
nC
ns
2
2
ns
2
89
ns
2
35
28
ns
ns
2
26
nC
11
75

Single P-channel MOSFET



ELM321504A-S





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■Typical electrical and thermal characteristics
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 
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

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

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
 
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
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

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
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

5-3





Single P-channel MOSFET

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
 

ELM321504A-S




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     
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
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
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
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     
                  
                  
                    
                    
                    

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
 �


       







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


5-4
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
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 

Single
P-channel MOSFET
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ELM321504A-S


 
■Test circuit and waveforms
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
5-5
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
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