Data Sheet

SO
T2
3
PMV30XN
20 V, 3.2 A N-channel Trench MOSFET
Rev. 1 — 22 June 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Low threshold voltage
 Trench MOSFET technology
 Very fast switching
1.3 Applications
 Relay driver
 Low-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-12
-
12
V
-
-
3.2
A
-
28
35
mΩ
drain current
ID
[1]
VGS = 4.5 V; Tamb = 25 °C
Static characteristics
drain-source on-state
resistance
RDSon
[1]
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
3
D
G
1
2
SOT23 (TO-236AB)
mbb076
S
PMV30XN
NXP Semiconductors
20 V, 3.2 A N-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
Package
PMV30XN
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMV30XN
NZ%
[1]
% = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
ID
drain current
-12
12
V
VGS = 4.5 V; Tamb = 25 °C
[1]
-
3.2
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
2.1
A
-
12.8
A
[2]
-
380
mW
[1]
-
520
mW
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
-
1800
mW
Tj
junction temperature
Tsp = 25 °C
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
0.6
A
Source-drain diode
source current
IS
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMV30XN
Product data sheet
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Rev. 1 — 22 June 2011
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PMV30XN
NXP Semiconductors
20 V, 3.2 A N-channel Trench MOSFET
017aaa123
120
017aaa124
120
Pder
(%)
Ider
(%)
80
80
40
40
0
−75
Fig 1.
−25
25
75
125
0
−75
175
Tj (°C)
Normalized total power dissipation as a
function of junction temperature
Fig 2.
−25
25
75
125
175
Tj (°C)
Normalized continuous drain current as a
function of junction temperature
017aaa263
102
ID
(A)
Limit RDSon = VDS/ID
(1)
10
(2)
1
(3)
(4)
(5)
10–1
(6)
10–2
10–1
1
10
VDS (V)
102
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tsp = 25 °C
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMV30XN
Product data sheet
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PMV30XN
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20 V, 3.2 A N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
thermal resistance
from junction to
ambient
Rth(j-a)
Conditions
in free air
Min
Typ
Max
Unit
[1]
-
285
330
K/W
[2]
-
208
240
K/W
-
60
70
K/W
thermal resistance
from junction to solder
point
Rth(j-sp)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
017aaa228
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102
0.25
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10–3
10–2
10–1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa229
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.25
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10–3
10–2
10–1
1
10
102
tp (s)
103
FR4 PCB, mounting pad for drain 6 cm2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV30XN
Product data sheet
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Rev. 1 — 22 June 2011
© NXP B.V. 2011. All rights reserved.
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PMV30XN
NXP Semiconductors
20 V, 3.2 A N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C
0.5
1
1.5
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
VDS = 20 V; VGS = 0 V; Tj = 150 °C
-
-
10
µA
IGSS
gate leakage current
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
-
28
35
mΩ
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
VGS = 4.5 V; ID = 3.2 A; Tj = 150 °C
-
44
51
mΩ
VGS = 2.5 V; ID = 2.6 A; Tj = 25 °C
-
39
60
mΩ
VDS = 10 V; ID = 3 A; Tj = 25 °C
-
15
-
S
VDS = 15 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
-
4.9
7.4
nC
-
1.5
-
nC
-
2.9
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
tf
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 15 V; VGS = 4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = 3 A
-
420
-
pF
-
125
-
pF
-
73
-
pF
-
11
-
ns
-
28
-
ns
turn-off delay time
-
93
-
ns
fall time
-
51
-
ns
-
0.67
1.2
V
Source-drain diode
VSD
source-drain voltage
PMV30XN
Product data sheet
IS = 0.6 A; VGS = 0 V; Tj = 25 °C
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Rev. 1 — 22 June 2011
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PMV30XN
NXP Semiconductors
20 V, 3.2 A N-channel Trench MOSFET
017aaa264
14
ID
(A)
12
4.5 V
3V
2.5 V
017aaa180
10–3
VGS = 2.25 V
ID
(A)
10
10–4
(1)
8
(2)
(3)
2V
6
10–5
4
1.8 V
2
0
0
1
2
3
VDS (V)
4
10–6
0.0
Tj = 25 °C
0.5
1.0
1.5
VGS (V)
2.0
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
017aaa265
140
RDSon
(mΩ)
120
(1)
(2)
Sub-threshold drain current as a function of
gate-source voltage
017aaa266
100
RDSon
(mΩ)
(3)
80
100
60
80
60
40
(1)
40
(4)
(5)
(2)
20
(6)
20
0
0
2
6
10
ID (A)
14
0
2
Tj = 25 °C
ID = 5 A
(1) VGS = 1.8 V
(1) Tj = 150 °C
(2) VGS = 2.0 V
(2) Tj = 25 °C
4
6
VGS (V)
8
(3) VGS = 2.25 V
(4) VGS = 2.5 V
(5) VGS = 3.0 V
(6) VGS = 4.5 V
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values
PMV30XN
Product data sheet
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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Rev. 1 — 22 June 2011
© NXP B.V. 2011. All rights reserved.
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PMV30XN
NXP Semiconductors
20 V, 3.2 A N-channel Trench MOSFET
017aaa267
25
ID
(A)
017aaa268
1.6
a
(1)
(2)
20
1.4
15
1.2
10
1.0
5
0.8
(1)
(2)
0
0
1
2
3
VGS (V)
4
0.6
–60
0
60
120
Tj (°C)
180
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa269
2.0
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa270
103
VGS(th)
(V)
(1)
C
(pF)
(1)
1.5
102
(2)
1.0
(2)
(3)
(3)
0.5
0.0
–60
0
60
120
Tj (°C)
180
10
10–1
1
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) maximum values
(1) Ciss
(2) typical values
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
PMV30XN
Product data sheet
10
VDS (V)
102
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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© NXP B.V. 2011. All rights reserved.
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PMV30XN
NXP Semiconductors
20 V, 3.2 A N-channel Trench MOSFET
017aaa271
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
QGS2
QGS
1
QGD
QG(tot)
017aaa137
0
0
1
2
3
4
QG (nC)
5
ID = 3 A; VDS = 10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa272
2.5
IS
(A)
2.0
(1)
(2)
1.5
1.0
0.5
0.0
0.0
0.2
0.4
0.6
VSD (V)
0.8
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMV30XN
Product data sheet
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Rev. 1 — 22 June 2011
© NXP B.V. 2011. All rights reserved.
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PMV30XN
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20 V, 3.2 A N-channel Trench MOSFET
8. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 17. Duty cycle definition
PMV30XN
Product data sheet
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Rev. 1 — 22 June 2011
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20 V, 3.2 A N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
Fig 18. Package outline SOT23 (TO-236AB)
PMV30XN
Product data sheet
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Rev. 1 — 22 June 2011
© NXP B.V. 2011. All rights reserved.
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20 V, 3.2 A N-channel Trench MOSFET
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 20. Wave soldering footprint for SOT23 (TO-236AB)
PMV30XN
Product data sheet
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Rev. 1 — 22 June 2011
© NXP B.V. 2011. All rights reserved.
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PMV30XN
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20 V, 3.2 A N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMV30XN v.1
20110622
Product data sheet
-
-
PMV30XN
Product data sheet
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Rev. 1 — 22 June 2011
© NXP B.V. 2011. All rights reserved.
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20 V, 3.2 A N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status [1] [2]
Product status [3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
PMV30XN
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Rev. 1 — 22 June 2011
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PMV30XN
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20 V, 3.2 A N-channel Trench MOSFET
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products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMV30XN
Product data sheet
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20 V, 3.2 A N-channel Trench MOSFET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .1
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 June 2011
Document identifier: PMV30XN